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MOSFET Device Physics and Operation

MOSFET Device Physics and Operation

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independent of the biasing conditions. However, between the semiconductor and the metal contact, the Fermi level is shifted by E Fm – E Fs = qV (see Figure 1.3(b)). Hence, we have a quasi-equilibrium situation in which the semiconductor can be treated as if in thermal equilibrium. A MOS structure with a p-type semiconductor will enter the ...

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