Transcription of UNISONIC TECHNOLOGIES CO., LTD
1 UNISONIC TECHNOLOGIES CO., LTD 2SC4242 npn silicon TRANSISTOR 1 of 4 Copyright 2016 UNISONIC TECHNOLOGIES Co., Ltd SWITCHMODE SERIES NPN POWER TRANSISTORS DESCRIPTION The UTC 2SC4242 is a high-voltage, high-speed switchingpower transistor and designed particularly for 115 and 220V switch mode applications, such as switching regulators, inverters, DC-DC converter and general purpose power amplifiers. FEATURES * Low saturation voltage. * Switching time: tF= s (Max.)@ IC= * High reliability ORDERING INFORMATION Ordering Number Pin Assignment Normal Lead Free Plating Package 1 2 3 Packing 2SC4242-TA3-T 2SC4242L-TA3-T TO-220 B C E Tube Note: Pin Assignment: B: Base C: Collector E: Emitter MARKING 2SC4242 npn silicon TRANSISTOR UNISONIC TECHNOLOGIES CO.
2 , LTD 2 of 4 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLRATINGS UNIT Collector-Emitter Voltage VCEO 400 V Collector-Base Voltage VCBO 450 V Emitter-Base Voltage VEBO V ContinuousIC
3 A Collector Current Peak ICM 14 A Base Current IB A 40 W Total Power Dissipation @TC=25 C Derate Above 25 C PD W/ C Junction Temperature TJ +150 C Storage Temperature TSTG -40 ~ +150 C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
4 Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOLRATINGS UNIT Thermal Resistance Junction -Case JC 4 C/W ELECTRICAL CHARACTERISTICS (TC=25 C, unless otherwise specified) PARAMETER SYMBOLTEST CONDITIONS MIN TYP MAX UNITOFF CHARACTERISTICS Collector-Emitter Sustaining Voltage BVCEOICEO=100mA, IB=0 400 V Collector-Base Breakdown Voltage BVCBOICBO= , IE=0 450 V Emitter-Base Breakdown Voltage BVEBOIEBO=.
5 IC=0 V Collector Cutoff Current ICBO VCBO=450V, IE=0 100 A Emitter Cutoff Current IEBO VEBO= , IC=0 100 A ON CHARACTERISTICS DC Current Gain hFE IC= , VCE= 10 Collector-Emitter Saturation Voltage VCE (SAT)IC= , IB=800mA V Base-Emitter Saturation Voltage VBE (SAT)
6 IC= , IB=800mA V SWITCHING CHARACTERISTICS On Time tON s Storage Time tS s Fall Time tF VCC=150V, IC= IB1= -IB2= , RL=30 s Note: Pulse Test: Pulse Width=300 s, Duty Cycle 2SC4242 npn silicon TRANSISTOR UNISONIC TECHNOLOGIES CO.
7 , LTD 3 of 4 TYPICAL CHARACTERISTIC 100s 100125 Temperature, TC ( C)010204060 Power Derating30502550751500 Collector Emitter Voltage, VCE (V)DC Current Gain, hFE Voltage, V (V) Time, t ( s) 2SC4242 npn silicon TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 4 of 4 UTC assumes no responsibility for equipment failures that result from using products at values thatexceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, orother parameters) listed in products specifications of any and all UTC products described or containedherein.
8 UTC products are not designed for use in life support appliances, devices or systems wheremalfunction of these products can be reasonably expected to result in personal injury. Reproduction inwhole or in part is prohibited without the prior written consent of the copyright owner. The informationpresented in this document does not form part of any quotation or contract, is believed to be accurateand reliable and may be changed without notice.
