New Design Please Use ZTX653 NPN SILICON …

1 NPN SILICON PLANARMEDIUM power TRANSISTORSISSUE 2 JULY 94 FEATURES*100 Volt VCEO*2 Amp continuous current*Low saturation voltage*Ptot=1 WattABSOLUTE MAXIMUM VoltageVCBO100120 VCollector-Emitter VoltageVCEO80100 VEmitter-Base VoltageVEBO5 VPeak Pulse CurrentICM6 AContinuous Collector CurrentIC2 APower Dissipation at Tamb=25 Cderate above 25 COperating and Storage Temperature RangeTj:Tstg-55 to +200 CELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated).PARAMETERSYMBOLZTX652 ZTX653 UNIT TYP. MAX. MIN. TYP. (BR)CBO100120 VIC=100 ACollector-EmitterBreakdownVoltageV(BR)C EO80100 VIC=10mA*Emitter-BaseBreakdownVoltageV(B R)EBO55 VIE=100 ACollector A A A AVCB=80 VVCB=100 VVCB=80V,Tamb=100 CVCB=100V,Tamb=100 CEmitter AVEB=4 VCollector-EmitterSaturation VoltageVCE(sat) , IB=100mA*IC=2A, IB=200mA*Base-Emitter Saturation VoltageVBE(sat) , IB=100mA*Base-Emitter Turn-On VoltageVBE(on) , VCE=2V*ZTX652 ZTX6533-223C B EE-LineTO92 CompatibleELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated).

2 PARAMETERSYMBOLZTX652 ZTX653 UNIT TYP. MAX. MIN. TYP. , VCE=5Vf=100 MHzSwitching Timeston8080nsIC=500mA, VCC=10 VIB1=IB2=50mAtoff12001200nsOutput Capacitance Cobo3030pFVCB=10V f=1 MHz*Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%THERMAL Resistance: Junction to Ambient1 Junction to Ambient2 Junction to CaseRth(j-amb)1 Rth(j-amb)2 Rth(j-case)17511670 C/W C/W C/W Device mounted on with copper equal to 1 sq. Inch Derating curveT -Temperature ( C) Max power Dissipation - (Watts)Maximum transient thermal impedancePulse Width (seconds) Thermal Resistance ( C/W) 02040 60 80 100 PulseD= temperature0D=1 ( )3-222 ZTX652 Not Recommended for New Design Please Use ZTX653 NPN SILICON PLANARMEDIUM power TRANSISTORSISSUE 2 JULY 94 FEATURES*100 Volt VCEO*2 Amp continuous current*Low saturation voltage*Ptot=1 WattABSOLUTE MAXIMUM VoltageVCBO100120 VCollector-Emitter VoltageVCEO80100 VEmitter-Base VoltageVEBO5 VPeak Pulse CurrentICM6 AContinuous Collector CurrentIC2 APower Dissipation at Tamb=25 Cderate above 25 COperating and Storage Temperature RangeTj:Tstg-55 to +200 CELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated).

3 PARAMETERSYMBOLZTX652 ZTX653 UNIT TYP. MAX. MIN. TYP. (BR)CBO100120 VIC=100 ACollector-EmitterBreakdownVoltageV(BR)C EO80100 VIC=10mA*Emitter-BaseBreakdownVoltageV(B R)EBO55 VIE=100 ACollector A A A AVCB=80 VVCB=100 VVCB=80V,Tamb=100 CVCB=100V,Tamb=100 CEmitter AVEB=4 VCollector-EmitterSaturation VoltageVCE(sat) , IB=100mA*IC=2A, IB=200mA*Base-Emitter Saturation VoltageVBE(sat) , IB=100mA*Base-Emitter Turn-On VoltageVBE(on) , VCE=2V*ZTX652 ZTX6533-223C B EE-LineTO92 CompatibleELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated).PARAMETERSYMBOLZTX652 ZTX653 UNIT TYP. MAX. MIN. TYP. , VCE=5Vf=100 MHzSwitching Timeston8080nsIC=500mA, VCC=10 VIB1=IB2=50mAtoff12001200nsOutput Capacitance Cobo3030pFVCB=10V f=1 MHz*Measured under pulsed conditions. Pulse width=300 s. Duty cycle 2%THERMAL Resistance: Junction to Ambient1 Junction to Ambient2 Junction to CaseRth(j-amb)1 Rth(j-amb)2 Rth(j-case)17511670 C/W C/W C/W Device mounted on with copper equal to 1 sq.

4 Inch Derating curveT -Temperature ( C) Max power Dissipation - (Watts)Maximum transient thermal impedancePulse Width (seconds) Thermal Resistance ( C/W) 02040 60 80 100 PulseD= temperature0D=1 ( )3-222 ZTX652 Not Recommended for New Design Please Use ZTX653 ZTX652 ZTX653 TYPICAL CHARACTERISTICS VCE(sat)v IC IC - Collector Current (Amps) VCE(sat) - (Volts)IC - Collector Current (Amps)VCE - Collector Voltage (Volts) Safe Operating Area 1 10 Single Pulse Test at Tamb=25 1s 100ms 10ms 100 - Collector Current (Amps) VBE(sat)v IC VBE(sat) - (Volts)IC - Collector Current (Amps) hFEv IC hFE - - Collector Current (Amps) VBE(on)v IC VBE - (Volts)Switching SpeedsIC - Collector Current (Amps) Switching ZTX652 Not Recommended for New Design Please Use ZTX653