16-Ch/Dual 8-Ch High-Performance CMOS Analog …

1 DG406, Siliconix S13-2518-Rev. K, 09-Dec-131 Document Number: 70061 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 8-Ch High-Performance cmos Analog MultiplexersDESCRIPTIONThe DG406 is a 16 channel single-ended Analog multiplexer designed to connect one of sixteen inputs to a common output as determined by a 4-bit binary address. The DG407 selects one of eight differential inputs to a common differential output. Break-before-make switching action protects against momentary shorting of on channel conducts current equally well in both directions. In the off state each channel blocks voltages up to the power supply rails. An enable (EN) function allows the user to reset the multiplexer/demultiplexer to all switches off for stacking several devices. All control inputs, address (Ax) and enable (EN) are TTL compatible over the full specified operating temperature for the DG406, DG407 include high speed data acquisition, audio signal switching and routing, ATE systems, and avionics.

2 high performance and low power dissipation make them ideal for battery operated and remote instrumentation in the 44 V silicon-gate cmos process, the absolute maximum voltage rating is extended to 44 V, allowing operation with 20 V supplies. Additionally single (12 V) supply operation is allowed. An epitaxial layer prevents applications information please request documents 70601 and Low on-resistance - RDS(on): 50 Low charge injection - Q: 15 pC Fast transition time - tTRANS: 200 ns Low power: mW Single supply capability 44 V supply max. rating Material categorization: For definitions of compliance please see Note *This datasheet provides information about parts that are RoHS-compliant and/or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information/tables in this datasheet for Higher accuracy Reduced glitching Improved data throughput Reduced power consumption Increased ruggedness Wide supply ranges: 5 V to 20 VAPPLICATIONS Data acquisition systems Audio signal routing Medical instrumentation ATE systems Battery powered systems high -rel systems Single supply systemsFUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATIONA vailableAvailableV+S11S10S9 NCA3DS2S1 GNDA1A2 NCDual-In-Line and SOIC Wide-BodyA0 ENV-NCS8S16S7S15S6S14S5S13S4S12S31234567 82827262524232221 Top View92010191112181713161415DG406 Decoders/DriversDG407V+S3bS2bS1bNCNCDaS2 aS1aGNDA1A2 DbDual-In-Line and SOIC Wide-BodyA0 ENV-NCS8aS8bS7aS7bS6aS6bS5aS5bS4aS4bS3a1 23456782827262524232221 Top View922010191112181713161415 Decoders/DriversDG406, Siliconix S13-2518-Rev.

3 K, 09-Dec-132 Document Number: 70061 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT BLOCK DIAGRAM AND PIN CONFIGURATIONN otes Logic 0 = VAL V Logic 1 = VAH V X = Do not CareNote -T1 indicates Tape and Reel, -E3 indicates Lead-Free and RoHS Compliant, NO -E3 indicates standard Tin/Lead 13 14 15 16 17 18262728 Top View6 PLCC and LCCS13S15S5S12S4S7S11S14S6S3S10S2S9S1 SGNDNCNCNC3V+2D1V-0 SENDG406 AAAA168S7bS5aS4bS4aS7aS3bS6bS6aS3aS5bS2b S2aS1bS1aPLCC and LCCTop ViewGNDNCNCDNCV+DV-ENS210 SAAA8b8abaDG407 Decoders/Drivers789520192122232425123410 1112 13 14 15 16 17 182627286 TRUTH TABLE (DG406)A3A2 A1 A0 EN ON SWITCHX X X X 0 None 0 0 0 0 1 1 0 0 0 1 1 2 0 0 1 0 1 3 0 0 1 1 1 4 0 1 0 0 1 5 0 1 0 1 1 6 0 1 1 0 1 7 0 1 1 1 1 8 1 0 0 0 1 9 1 0 0

4 1 1 10 1 0 1 0 1 11 1 0 1 1 1 12 1 1 0 0 1 13 1 1 0 1 1 14 1 1 1 0 1 15 1 1 1 1 1 16 TRUTH TABLE (DG407)A2 A1 A0 EN ON SWITCH PAIR X X X 0 None 0 0 0 1 1 0 0 1 1 2 0 1 0 1 3 0 1 1 1 4 1 0 0 1 5 1 0 1 1 6 1 1 0 1 7 1 1 1 1 8 ORDERING INFORMATION (DG406)TEMP.

5 RANGEPACKAGEPART NUMBER-40 C to 85 C28-Pin Plastic DIPDG406DJ,DG406DJ-E328-Pin PLCCDG406DN,DG406DN-T1-E328-Pin Widebody SOICDG406DW,DG406DW-E3,DG406DW-T1-E3 ORDERING INFORMATION (DG407)TEMP. RANGEPACKAGEPART NUMBER-40 C to 85 C28-Pin Plastic DIPDG407DJ,DG407DJ-E328-Pin PLCCDG407DN,DG407DN-T1-E328-Pin Widebody SOICDG407DW,DG407DW-E3,DG407DW-T1-E3DG40 6, Siliconix S13-2518-Rev. K, 09-Dec-133 Document Number: 70061 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Signals on SX, DX or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current All leads soldered or welded to PC Derate 6 mW/ C above 75 Derate 12 mW/ C above 75 Derate mW/ C above 75 Also applies when V- = GNDABSOLUTE MAXIMUM RATINGSPARAMETER LIMITUNIT Voltages Referenced to V-V+ to V -f44 VGND to V--25 Digital Inputsa, VS, VD(V-) - 2 to (V+) + 2 Vor 20 mA, whichever occurs firstCurrent (Any terminal) 30mAPeak Current, S or D (Pulsed at 1 ms, 10 % duty cycle max.)

6 100 Storage Temperature (AK, AZ Suffix)-65 to 150 C(DJ, DN Suffix)-65 to 125 Power Dissipation (Package)b 28-Pin Plastic DIPb625mW28-Pin Plastic PLCCc45028-Pin Widebody SOIC450DG406, Siliconix S13-2518-Rev. K, 09-Dec-134 Document Number: 70061 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT PARAMETER SYMBOL TEST CONDITIONS UNLESS OTHERWISE SPECIFIED V+ = 15 V, V- = -15 VVAL = V, VAH = SUFFIX -40 C TO 85 CUNIT SwitchAnalog Signal RangeeVANALOGFull--1515 VDrain-Source On-ResistanceRDS(on)VD = 10 V, IS = -10 mAsequence each switch onRoom50-100 Full50-125 RDS(on) Matching Between Channelsg RDS(on)VD = 10 VRoom5--%Source Off Leakage CurrentIS(off)VEN = 0 V VD = 10 V VS = 10 Off Leakage CurrentID(off) On Leakage CurrentID(on)VS = VD = 10 sequence each switch on ControlLogic high Input Low Input high Input CurrentIAHVA = V, 15 VFull--11 ALogic Low Input CurrentIALVEN = 0 V, V, VA = 0 VFull--11 Logic Input CapacitanceCinf = 1 MHzRoom7--pFDynamic CharacteristicsTransition TimetTRANSsee figure 2 Room200-350nsFull--450 Break-Before-Make IntervaltOPENsee figure 4 Room5025-Full-10-Enable Turn-On TimetON(EN)see figure 3 Room150-200 Full--400 Enable Turn-Off TimetOFF(EN)Room70-150 Full--300 Charge InjectionQVS = 0 V, CL = 1 nF, RS = 0 Room15--pCOff IsolationhOIRRVEN = 0 V, RL = 1 k f = 100 kHzRoom-69--dBSource Off CapacitanceCS(off)VEN = 0 V, VS = 0 V, f = 1 MHzRoom8--pFDrain Off CapacitanceCD(off)VEN = 0 VVD = 0 Vf = 1 MHzRoom130--DG407 Room65--Drain On CapacitanceCD(on)

7 DG406 Room140--DG407 Room70--Power SuppliesPositive Supply CurrentI+VEN = VA = 0 or 5 VRoom13-30 AFull--75 Negative Supply Supply CurrentI+VEN = V, VA = 0 VRoom50-500 Full-700 Negative Supply , Siliconix S13-2518-Rev. K, 09-Dec-135 Document Number: 70061 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Refer to PROCESS OPTION Room = 25 C, Full = as determined by the operating temperature Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data Guaranteed by design, not subject to production VIN = input voltage to perform proper RDS(on) = RDS(on) max. - RDS(on) Worst case isolation occurs on Channel 4 due to proximity to the drain pin. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device.

8 These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device (for Single Supply)PARAMETER SYMBOL TEST CONDITIONS UNLESS OTHERWISE SPECIFIED V+ = 12 V, V- = 0 VVAL = V, VAH = SUFFIX -40 C TO 85 CUNIT SwitchAnalog Signal RangeeVANALOGFull-012 VDrain-Source On-ResistanceRDS(on)VD = 3 V, 10 V, IS = -1 mAsequence each switch onRoom90-120 RDS(on) Matching Between Channelsg RDS(on)Room5--%Source Off Leakage CurrentIS(off)VEN = 0 V VD = 10 V or V VS = V or 10 Off Leakage CurrentID(off) On Leakage CurrentID(on)VS = VD = 10 V sequence each switch on CharacteristicsSwitching Time of MultiplexertOPENVS1 = 8 V, VS8 = 0 V, VIN = VRoom300-450nsEnable Turn-On TimetON(EN)VINH = V, VINL = 0 VVS1 = 5 V Room250-600 Enable Turn-Off TimetOFF(EN)

9 Room150-300 Charge InjectionQCL = 1 nF, VS = 6 V, RS = 0 Room20--pCPower SuppliesPositive Supply CurrentI+VEN = 0 V or 5 V, VA = 0 V or 5 VRoom13-30 AFull--75 Negative Supply , Siliconix S13-2518-Rev. K, 09-Dec-136 Document Number: 70061 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT CHARACTERISTICS (TA = 25 C, unless otherwise noted)RDS(on) vs. VD and SupplyRDS(on) vs. VD and SupplyID, IS Leakages vs. TemperatureRDS(on) vs. VD and TemperatureID , IS Leakage Currents vs. Analog VoltageSwitching Times vs. Bipolar SuppliesV D - Drain Voltage (V)16012080400- 2020 - 4- 12412 5 V 10 V 12 V 15 V 20 V 8 V- On-Resistance ( )RDS(on)V D - Drain Voltage (V) 160 120 80 40 0 020481216V+ = V 200 240 V- = 0 V 10 V 12 V 15 V 20 V 22 V - On-Resistance ( )RDS(on)Temperature ( C)- Current , ISIDV+ = 15 V V- = - 15 V V D = "14 V I D(on) , I D(of f) I S( of f) 100 nA 10 nA1 nA 100 pA 10 pA 1 pA pA - 55 - 35 - 15 5 2 5 4 5 6 5 8 5 105 125 V D - Drain Voltage (V) 0 40 30 20 10 80 70 60 50 15105- 15- 10- 50- 55 C- 40 C0 C25 C85 C125 CV+ = 15 V V- = - 15 V - On-Resistance ( )RDS(on)V S , V D - Source Drain Voltage (V) - Current (pA), ISID120 - 120 - 15- 10- 5051015- 80 - 40 0 40 80 V+ = 15 V V- = - 15 V V S = - V D for I D(of f) V D = V S(open) for I D(on) DG406 I D(on) , I D(of f) I S( of f) DG407 I D(on) , I D(of f) V SUPPL Y - Supply Voltage (V) Time (ns)

10 350 300 150 100 50 0 5 10 15 20200 250 t TRA N S t ON(E N) t OFF(E N ) DG406, Siliconix S13-2518-Rev. K, 09-Dec-137 Document Number: 70061 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT CHARACTERISTICS (TA = 25 C, unless otherwise noted)Switching Times vs. Single SupplyOff-Isolation vs. FrequencytON/tOFF vs. TemperatureCharge Injection vs. Analog VoltageSupply Currents vs. Switching FrequencySwitching Threshold vs. Supply VoltageV+ - Supply Voltage (V) T ime (ns) 700 600 300 200 100 0 51 0 1 5 20400 500 t TRA N S t ON(E N) t OFF(E N ) V- = 0 V f - Frequency (Hz)ISOL (dB) - 80 - 60 - 40 - 20 0 10K100K1M10M - 100 - 120 1K100- 140 Temperature ( C)Time (ns)180 140 100 60 220 t ON(E N) t OFF(E N ) t TRA N S 260 300 V+ = 15 V V- = - 15 V - 55 - 35125- 15525456585105V S - Source Voltage (V) Q (pC) 0 40 30 20 10 70 60 50 15 10 5 - 15 - 10 - 5 0 V+ = 15 V , V- = - 15 V V+ = 12 V , V- = 0 V f - Frequency (Hz)I - Current (mA)10 - 10 10 100 1K10K 100K 1M 10M 0 4 6 IGND2 8 I- I+ E N = 5 V A X = 0 or 5 V - 8 - 6 - 4 - 2 VSUPPLY - Supply Voltage (V) (V)VTH310510 15 2020DG406, Siliconix S13-2518-Rev.