RCA 811 tube data sheet - radiotechnika.hu

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MC1350 2 MOTOROLA ANALOG IC DEVICE DATA ELECTRICAL CHARACTERISTICS (V+ = +12 Vdc, TA = +25°C, unless otherwise noted.) Characteristics Symbol Min Typ Max Unit AGC Range, 45 MHz (5.0 V to 7.0 V) (Figure 1) 60 68 – dB

BUZ11 30A, 50V, 0.040 Ohm, N-Channel Power …

©2001 Fairchild Semiconductor Corporation BUZ1 Rev. A BUZ11 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode …

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BT136 series E Triacs sensitive gate - RÁDIÓVILÁG Kft.

Philips Semiconductors Product specification Triacs BT136 series E sensitive gate THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

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15+15W dual bridge amplifier - RÁDIÓVILÁG Kft.

tda7297 15+15w dual bridge amplifier wide supply voltage range (6v -18v) minimum external components – no svr capacitor – no bootstrap – no boucherot cells

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MCR100 - Sensitive Gate Rectifiers

MCR100 Series http://onsemi.com 4 DC Figure 3. Typical Holding Current versus Junction Temperature TJ, JUNCTION TEMPERATURE (°C) 1000 100 −40 −25 −10 5 …

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BD249, BD249A, BD249B, BD249C NPN SILICON …

BD249, BD249A, BD249B, BD249C NPN SILICON POWER TRANSISTORS 2 JUNE 1973 - REVISED MARCH 1997 PRODUCT INFORMATION NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6.

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15+15W dual bridge amplifier - radiotechnika.hu

tda7297 15+15w dual bridge amplifier wide supply voltage range (6v -18v) minimum external components – no svr capacitor – no bootstrap – no boucherot cells

  Bridge, Amplifier, Dual, 15 15w dual bridge amplifier, Radiotechnika