General Description Product Summary • Trench …

1 AONS62614 General DescriptionProduct SummaryVDS ID (at VGS=10V)100A RDS(ON) (at VGS=10V)< RDS(ON) (at VGS= )< Applications100% UIS Tested100% Rg TestedSymbolVDSVGSIDMIASA valanche energy L= Spike IVSPIKETJ, TSTGS ymbolt 10sSteady-StateSteady-StateRqJC60V N-Channel AlphaSGTTMTA=25 CTA=70 CTC=25 CTC=100 COrderable Part NumberPackage TypeFormMinimum Order Quantity60V Trench Power MOSFET - AlphaSGTTM technology Low RDS(ON) Logic Level Gate Drive Excellent Gate Charge x RDS(ON) Product (FOM) RoHS and Halogen-Free CompliantTC=25 CAvalanche Current CContinuous DrainCurrentThermal CharacteristicsParameterMaxTA=70 CUnitsJunction and Storage Temperature Range-55 to 150 TypPDSMWTA=25 Dissipation AMaximum Junction-to-Ambient A C/WRqJA154020 WIDVA42A320 IDSM30mJ26537100 VAAbsolute Maximum Ratings TA=25 C unless otherwise noted 20 VMaximumUnitsAONS62614 DFN 5x6 Tape & Reel3000 Maximum Junction-to-Case C/W C/WMaximum Junction-to-Ambient A High Frequency Switching and Synchronous RectificationPower Dissipation C 10 sPD6072119 Gate-Source VoltagePulsed Drain Current C100 ParameterDrain-Source VoltageContinuous DrainCurrent GG D S Top View SSSGDDDD1 2 3 4 8 7 6 5 PIN1 PIN1 DFN5x6 Top View Bottom View.

2 October 1 of 6 AONS62614 SymbolMinTypMaxUnitsBVDSS60 VVDS=60V, VGS=0V1TJ=55 C5 IGSS 100nAVGS(th)Gate Threshold Qg(10V)6490nCQg( ) ChargeVGS=0V, VDS=30V57nCtD(on) (off) OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVEPRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT VGS=10V, VDS=30V, ID=20 ATotal Gate ChargeElectrical Characteristics (TJ=25 C unless otherwise noted)STATIC PARAMETERSP arameterConditionsGate resistancef=1 MHzIDSS AZero Gate Voltage Drain CurrentDrain-Source Breakdown VoltageID=250mA, VGS=0 VRDS(ON)Static Drain-Source On-ResistanceGate Source ChargeGate Drain ChargeTotal Gate ChargeSWITCHING PARAMETERSTurn-On DelayTimeVDS=0V, VGS= 20 VMaximum Body-Diode Continuous Current GInput CapacitanceGate-Body leakage currentBody Diode Reverse Recovery ChargeBody Diode Reverse Recovery TimeIF=20A, di/dt=500A/msTurn-Off DelayTimeTurn-Off Fall TimeVGS=10V, VDS=30V, RL= ,RGEN=3 WDiode Forward VoltageDYNAMIC PARAMETERSVGS= , ID=20 AIF=20A, di/dt=500A/msTurn-On Rise TimeReverse Transfer CapacitanceVGS=0V, VDS=30V, f=1 MHzVDS=VGS, ID=250mAOutput CapacitanceForward TransconductanceIS=1A, VGS=0 VVDS=5V, ID=20 AVGS=10V, ID=20AA.

3 The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25 C. The Power dissipation PDSM is based on R qJA t 10s and the maximum allowed junction temperature of 150 C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150 C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150 C. D. The RqJA is the sum of the thermal impedance from junction to case RqJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150 C.

4 The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25 C. I. The spike duty cycle 5% max, limited by junction temperature TJ(MAX)=125 C. : October 2 of 6 AONS62614 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS02040608010012345ID (A) VGS (Volts) Figure 2: Transfer Characteristics (Note E) 012345051015202530 RDS(ON) (mW) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) + + (A) VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) 25 C 125 C On-Resistance Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature (Note E) VGS= ID=20A VGS=10V ID=20A 02468246810 RDS(ON) (mW) VGS (Volts) Figure 5: On-Resistance vs.

5 Gate-Source Voltage (Note E) 25 C 125 C VDS=5V VGS= VGS=10V ID=20A 25 C 125 C 020406080100012345ID (A) VDS (Volts) Figure 1: On-Region Characteristics (Note E) VGS= 3V 10V : October 3 of 6 AONS62614 TYPICAL ELECTRICAL AND THERMAL (W) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) 0246810010203040506070 VGS (Volts) Qg (nC) Figure 7: Gate-Charge Characteristics 0100020003000400050000102030405060 Capacitance (pF) VDS (Volts) Figure 8: Capacitance Characteristics Ciss Normalized Transient Thermal Resistance Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Coss Crss VDS=30V ID=20A Single Pulse D=Ton/T TJ,PK=TC+ Ton T PDM In descending order D= , , , , , , single pulse TJ(Max)=150 C TC=25 C 10ms (Amps) VDS (Volts) VGS> or equal to Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10ms 1ms DC RDS(ON) limited TJ(Max)=150 C TC=25 C 100ms 10ms RqJC= C/W : October 4 of 6 AONS62614 TYPICAL ELECTRICAL AND THERMAL Normalized Transient Thermal Resistance Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Single Pulse D=Ton/T TJ,PK=TA+ Ton T PDM In descending order D= , , , , , , single pulse 02550751001251500255075100125150 Power Dissipation (W) TCASE ( C) Figure 12.

6 Power De-rating (Note F) 0204060801001200255075100125150 Current rating ID (A) TCASE ( C) Figure 13: Current De-rating (Note F) (W) Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note H) TA=25 C RqJA=50 C/W (uJ) VDS (Volts) Figure 14: Coss stored Energy : October 5 of 6 AONS62614 -+VDCIgVdsDUT-+VDCVgsVgs10 VQgQgsQgdChargeGate Charge Test Circuit & Waveform-+VDCDUTVddVgsVdsVgsRLRgVgsVds10 %90%Resistive Switching Test Circuit & Waveformsttrd(on)tontd(off)tftoffVddVgsI dVgsRgDUT-+VDCLVgsVdsIdVgsBVIU nclamped Inductive Switching (UIS) Test Circuit & WaveformsIgVgs-+VDCDUTLVdsVgsVdsIsdIsdDi ode Recovery Test Circuit & WaveformsVds -Vds +IFARDSS2E = 1/2 LIdI/dtIRMrrVddVddQ = - IdtARARtrrFigure A: Gate Charge Test Circuit & Waveforms Figure B: Resistive Switching Test Circuit & Waveforms Figure C: Unclamped Inductive Switching (UIS) Test Circuit & Waveforms Figure D: Diode Recovery Test Circuit & Waveforms : October 6 of 6