Dual High Voltage Trench MOS Barrier Schottky …

1 V30200C, VF30200C, VB30200C, General Semiconductor Revision: 19-Jun-20181 Document Number: 89014 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT high Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = V at IF = 5 ADESIGN SUPPORT TOOLSFEATURES Trench MOS Schottky technology Low forward Voltage drop, low power losses high efficiency operation Low thermal resistance Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C (for TO-263AB package)

2 Solder bath temperature 275 C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package) Material categorization: for definitions of compliance please see APPLICATIONSFor use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery DATACase: TO-220AB, ITO-220AB, D2 PAK (TO-263AB), and TO-262 AAMolding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial gradeTerminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker testPolarity: as markedMounting Torque.

3 10 in-lbs maximum PRIMARY CHARACTERISTICSIF(AV)2 x 15 AVRRM200 VIFSM250 AVF at IF = 15 VTJ CPackageTO-220AB, ITO-220AB, D2 PAK (TO-263AB), TO-262 AACircuit configurationsCommon cathodeTO-220AB12312 KPIN 1 PIN 2 PIN 3 KPIN 1 PIN 2 KHEATSINKV30200 CVF30200 CVB30200 CTMBS ITO-220AB123VI30200C1K23TO-262 AAPIN 1 PIN 2 PIN 3 KPIN 1 PIN 2 PIN 3KD2 PAK (TO-263AB)click logo to get startedAvailableModelsMAXIMUM RATINGS (TA = 25 C unless otherwise noted)PARAMETERSYMBOL V30200C VF30200C VB30200C VI30200C UNIT Maximum repetitive peak reverse Voltage VRRM 200V Maximum average forward rectified current (fig.)

4 1)per deviceIF(AV)30 Aper diode15 Peak forward surge current ms single half sine-wave superimposed on rated load per diodeIFSM250 ANon-repetitive avalanche energy at TJ = 25 C, L = 60 mH per diodeEAS200mJPeak repetitive reverse current at tp = 2 s, 1 kHz, TJ = 38 C 2 C per rate of change (rated VR)dV/dt10 000V/ sIsolation Voltage (ITO-220AB only) from terminal to heatsink t = 1 minVAC1500 VOperating junction and storage temperature range TJ, TSTG-40 to +150 CV30200C, VF30200C, VB30200C, General Semiconductor Revision: 19-Jun-20182 Document Number: 89014 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

5 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT (1)Pulse test: 300 s pulse width, 1 % duty cycle(2)Pulse test: Pulse width 40 msRATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted)Fig. 1 - Forward Derating CurveFig. 2 - Forward Power Loss Characteristics Per DiodeELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)PARAMETERTEST CONDITIONSSYMBOL Breakdown voltageIR = 10 mATA = 25 C VBR205 Instantaneous forward Voltage per diode (1)IF = 5 A TA = 25 C VF = 10 A = 15 A = 5 A TA = 125 C = 10 A = 15 A current per diode (2) VR = 180 VTA = 25 C IR A TA = 125 C = 200 VTA = 25 C A TA = 125 C CHARACTERISTICS (TA = 25 C unless otherwise noted)

6 PARAMETERSYMBOL V30200 CVF30200 CVB30200 CVI30200 CUNIT Typical thermal resistance per diodeR C/W ORDERING INFORMATION (Example)PACKAGEPREFERRED P/NUNIT WEIGHT (g) PACKAGE CODEBASE QUANTITYDELIVERY MODETO-220 ABV30200C-E3 and reelTO-262 AAVI30200C-E3 Forward Current (A)Case Temperature ( C)Resistive or Inductive LoadVF30200CV(B,I)30200C0246810121404862 1210161814 Average Forward Current (A)Average Power Loss (W)D = = = = = = = tp/TtpTV30200C, VF30200C, VB30200C, General Semiconductor Revision: 19-Jun-20183 Document Number: 89014 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

7 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 3 - Typical Instantaneous Forward Characteristics Per DiodeFig. 4 - Typical Reverse Characteristics Per DiodeFig. 5 - Typical Junction Capacitance Per DiodeFig. 6 - Typical Transient Thermal Impedance Per DiodeFig. 7 - Typical Transient Thermal Impedance Per Forward Voltage (V)Instantaneous Forward Current (A)TA = 150 CTA = 125 CTA = 25 CInstantaneous Reverse Current (mA) 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%)TA = 150 CTA = 125 CTA = 25 C10010100010 Voltage (V)Junction Capacitance (pF)t - Pulse Duration (s)Transient Thermal Impedance ( C/W) to CaseV(B,I) - Pulse Duration (s)Transient Thermal Impedance ( C/W)

8 Junction to CaseVF30200CV30200C, VF30200C, VB30200C, General Semiconductor Revision: 19-Jun-20184 Document Number: 89014 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT OUTLINE DIMENSIONS in inches (millimeters) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )V30200C, VF30200C, VB30200C, General Semiconductor Revision: 19-Jun-20185 Document Number: 89014 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

9 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )D2 PAK (TO-263AB)Mounting Pad ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )0 to (0 to ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) Disclaimer Revision: 01-Jan-20211 Document Number: 91000 Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

10 vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.