Dual High Voltage Trench MOS Barrier Schottky …

1 V40100C, General Semiconductor Revision: 09-Nov-171 Document Number: 89162 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT high Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = V at IF = 5 AFEATURES Trench MOS Schottky technology Low forward Voltage drop, low power losses high efficiency operation Low thermal resistance Solder dip 275 C max. 10 s, per JESD 22-B106 Material categorization: for definitions of compliance please see APPLICATIONSFor use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery DATACase: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial gradeTerminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker testPolarity: as markedMounting Torque.

2 10 in-lbs CHARACTERISTICSIF(AV)2 x 20 AVRRM100 VIFSM250 AVF at IF = 20 VTJ CPackageTO-220AB, TO-262 AADiode variationCommon cathodePIN 1 PIN 2 PIN 3 KVI40100 CTO-220 ABV40100C123 PIN 1 PIN 2 CASEPIN 3 TMBS 1K23TO-262 AAMAXIMUM RATINGS (TA = 25 C unless otherwise noted)PARAMETER SYMBOLV40100 CVI40100 CUNITMax. repetitive peak reverse voltageVRRM100 VMax. average forward rectified current (fig. 1)per deviceIF(AV)40 Aper diode20 Peak forward surge current ms single half sine-wave superimposed on rated load per diodeIFSM250 AVoltage rate of change (rated VR)dV/dt10 000V/ sOperating junction and storage temperature rangeTJ, TSTG-40 to +150 CV40100C, General Semiconductor Revision: 09-Nov-172 Document Number: 89162 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT (1)Pulse test: 300 s pulse width, 1 % duty cycle(2)Pulse test: Pulse width 40 msELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)PARAMETERTEST forward Voltage per diodeIF = 5 ATA = 25 CVF (1) = 10 = 20 = 5 ATA = 125 = 10 = 20 current at rated VR per diodeVR = 70 VTA = 25 CIR (2)9- ATA = 125 C10-mAVR = 100 VTA = 25 C-1000 ATA = 125 C2145mATHERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted)PARAMETER SYMBOLV40100 CVI40100 CUNITT ypical thermal resistance per diodeR C/WORDERING INFORMATION (Example)PACKAGEPREFERRED P/NUNIT WEIGHT (g)PACKAGE CODEBASE QUANTITYDELIVERY MODETO-220 ABV40100C-M3 , General Semiconductor Revision: 09-Nov-173 Document Number: 89162 For technical questions within your region.

3 DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted)Fig. 1 - Forward Current Derating CurveFig. 2 - Forward Power Loss Characteristics Per DiodeFig. 3 - Typical Instantaneous Forward Characteristics Per DiodeFig. 4 - Typical Reverse Characteristics Per DiodeFig. 5 - Typical Junction Capacitance Per DiodeFig. 6 - Typical Transient Thermal Impedance Per DiodeCase Temperature ( C)Average Forward Current (A)5040302010002550751001251501750246810 121416180510152025 Average Forward Current (A)Average Power Loss (W)D = = = = = = = tp/TtpTInstantaneous Forward Voltage (V) = 25 CTA = 125 CTA = 150 CTA = 100 CInstantaneous Forward Current (A) of Rated Peak Reverse Voltage (%)Instantaneous Reverse Current (mA)TA = 150 CTA = 25 CTA = 100 CTA = 125 Voltage (V)Junction Capacitance (pF)10 - Pulse Duration (s)Transient Thermal Impedance ( C/W)Junction to CaseV40100C, General Semiconductor Revision: 09-Nov-174 Document Number: 89162 For technical questions within your region: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

4 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT OUTLINE DIMENSIONS in inches (millimeters) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( )Legal Disclaimer Revision: 08-Feb-171 Document Number: 91000 Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.

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