40V Dual N-Channel MOSFET

1 AO4884. 40V dual N-Channel MOSFET . General Description Product Summary The AO4884 uses advanced trench technology to provide VDS 40V. excellent RDS(ON) with low gate charge. This is an all ID (at VGS=10V) 10A. purpose device that is suitable for use in a wide range of RDS(ON) (at VGS=10V) < 13m . power conversion applications. RDS(ON) (at VGS = ) < 16m . 100% UIS Tested 100% Rg Tested SOIC-8. D1 D2. Top View Bottom View Top View S2 1 8 D2. G2 2 7 D2. S1 3 6 D1. G1 4 5 D1 G1 G2. S1 S2. Pin1. Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter Symbol Maximum Units Drain-Source Voltage VDS 40 V. Gate-Source Voltage VGS 20 V.

2 Continuous Drain TA=25 C 10. ID. Current TA=70 C 8 A. Pulsed Drain Current C IDM 50. Avalanche Current C IAS, IAR 35 A. Avalanche energy L= C EAS, EAR 61 mJ. TA=25 C 2. PD W. Power Dissipation B TA=70 C Junction and Storage Temperature Range TJ, TSTG -55 to 150 C. Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t 10s 48 C/W. R JA. Maximum Junction-to-Ambient A D Steady-State 74 90 C/W. Maximum Junction-to-Lead Steady-State R JL 32 40 C/W. Rev 1: Nov 2010 Page 1 of 6. AO4884. Electrical Characteristics (TJ=25 C unless otherwise noted). Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS.

3 BVDSS Drain-Source Breakdown Voltage ID=250 A, VGS=0V 40 V. VDS=40V, VGS=0V 1. IDSS Zero Gate Voltage Drain Current A. TJ=55 C 5. IGSS Gate-Body leakage current VDS=0V, VGS= 20V 100 nA. VGS(th) Gate Threshold Voltage VDS=VGS ID=250 A V. ID(ON) On state drain current VGS=10V, VDS=5V 50 A. VGS=10V, ID=10A 11 13. m . RDS(ON) Static Drain-Source On-Resistance TJ=125 C 20. VGS= , ID=10A 16 m . gFS Forward Transconductance VDS=5V, ID=10A 50 S. VSD Diode Forward Voltage IS=1A,VGS=0V 1 V. IS Maximum Body-Diode Continuous Current A. DYNAMIC PARAMETERS. Ciss Input Capacitance 1200 1500 1950 pF. Coss Output Capacitance VGS=0V, VDS=20V, f=1 MHz 150 215 280 pF.

4 Crss Reverse Transfer Capacitance 80 135 190 pF. Rg Gate resistance VGS=0V, VDS=0V, f=1 MHz . SWITCHING PARAMETERS. Qg(10V) Total Gate Charge 22 33 nC. Qg( ) Total Gate Charge 10 16 nC. VGS=10V, VDS=20V, ID=10A. Qgs Gate Source Charge nC. Qgd Gate Drain Charge 9 nC. tD(on) Turn-On DelayTime ns tr Turn-On Rise Time VGS=10V, VDS=20V, RL=2 , ns tD(off) Turn-Off DelayTime RGEN=3 ns tf Turn-Off Fall Time ns trr Body Diode Reverse Recovery Time IF=10A, dI/dt=500A/ s 9 13 17 ns Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/ s 25 35 45 nC. A. The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz.

5 Copper, in a still air environment with TA =25 C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150 C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150 C. Ratings are based on low frequency and duty cycles to keep initialTJ=25 C. D. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz.

6 Copper, assuming a maximum junction temperature of TJ(MAX)=150 C. The SOA curve provides a single pulse ratin g. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING. OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1: Nov 2010 Page 2 of 6. AO4884. TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS. 120 100. VDS=5V. 100 10V 80. 80 4V. 60. ID (A). ID(A). 60. 40. 40. 25 C. 125 C. 20. 20. VGS=3V. 0 0. 0 1 2 3 4 5 2 3 4 VDS (Volts) VGS(Volts). Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E).

7 20 18 Normalized On-Resistance VGS=10V. 16. ID=10A. VGS= RDS(ON) (m ). 14. 17. 12. 5. 10 VGS=10V 2. VGS= 10. 8. 1 ID=10A. 6. 4 0 5 10 15 20 0 25 50 75 100 125 150 175. ID (A). Temperature ( C) 0. Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction Temperature 18. Voltage (Note E). (Note E). 25 +02. ID=10A. +01. 20 40. 125 C +00. RDS(ON) (m ). 125 C. IS (A). 15. 25 C. 10 25 C. 5 2 4 6 8 10 VGS (Volts) VSD (Volts). Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E). (Note E). Rev 1: Nov 2010 Page 3 of 6. AO4884. TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS.

8 10 2500. VDS=20V. ID=10A. 8 2000. Ciss Capacitance (pF). VGS (Volts). 6 1500. 4 1000. Coss 2 500. Crss 0 0. 0 5 10 15 20 25 30 0 10 20 30 40. Qg (nC) VDS (Volts). Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics 100 TA=25 C. IAR (A) Peak Avalanche Current TA=100 C. RDS(ON). 10 s ID (Amps). limited TA=150 C. TA=125 C. 100 . 1m TJ(Max)=150 C 10ms TA=25 C 10s DC. 10 1 10 100 1000 1 10 100. s). Time in avalanche, tA ( VDS (Volts). Figure 9: Single Pulse Avalanche capability (Note Figure 10: Maximum Forward Biased C) Safe Operating Area (Note F). 10000. TA=25 C. 1000. Power (W). 100. 10. 1. 10 1000. Pulse Width (s).

9 Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F). Rev 1: Nov 2010 Page 4 of 6. AO4884. TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS. 10. D=Ton/T In descending order TJ,PK=TA+ JA D= , , , , , , single pulse Z JA Normalized Transient R JA=90 C/W. Thermal Resistance 1. PD. Single Pulse Ton T. 1 10 100 1000. Pulse Width (s). Figure 12: Normalized Maximum Transient Thermal Impedance (Note F). Rev 1: Nov 2010 Page 5 of 6. AO4884. Gate Charge Test Circuit & Waveform Vgs Qg 10V. +. VDC. + Vds Qgs Qgd - VDC. DUT - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL. Vds Vds 90%. DUT. + Vdd Vgs VDC. Rg - 10%.

10 Vgs Vgs t d(on) tr t d(off) tf t on toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2. Vds E AR = 1/2 LIAR BVDSS. Id Vds Vgs + Vdd I AR. Vgs VDC. Rg - Id DUT. Vgs Vgs Diode Recovery Test Circuit & Waveforms Vds + Q rr = - Idt DUT. Vgs t rr Vds - L Isd IF. Isd dI/dt + Vdd I RM. Vgs VDC. Vdd Ig - Vds Rev 1: Nov 2010 Page 6 of 6.