P-Channel 20-V (D-S) MOSFET

1 vishay SiliconixSi7137 DPNew ProductDocument Number: 69063S09-0865-Rev. D, 20-V (D-S) MOSFETFEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET Gen III P-Channel Power MOSFET 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Adaptor Switch Battery Switch Load SwitchPRODUCT SUMMARY VDS (V)RDS(on) ( )ID (A)Qg (Typ.)- at VGS = - 10 V- 60d183 at VGS = - V- at VGS = - V - 60dNotes:a. Surface mounted on 1" x 1" FR4 t = 10 s. c. Maximum under Steady State conditions is 54 Package See Solder Profile ( ).

2 The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is notrequired to ensure adequate bottom side solder Rework Conditions: manual soldering with a soldering iron is not recommended for leadless MAXIMUM RATINGS TA = 25 C, unless otherwise notedParameter Symbol Limit Unit Drain-Source Voltage VDS- 20 VGate-Source Voltage VGS 12 Continuous Drain Current (TJ)

3 = 150 C)TC = 25 CID- 60dATC = 70 C- 60dTA = 25 C- 42a, bTA = 70 C- , bPulsed Drain Current IDM- 100 Continuous Source-Drain Diode CurrentTC = 25 CIS- 60dTA = 25 C- , bAvalanche CurrentL = mHIAS- 50 Single-Pulse Avalanche EnergyEAS125mJMaximum Power DissipationTC = 25 CPD104 WTC = 70 = 25 , bTA = 70 , bOperating Junction and Storage Temperature Range TJ, Tstg- 55 to 150 CSoldering Recommendations (Peak Temperature)e, f260 THERMAL RESISTANCE RATINGSP arameter Symbol Typical Maximum Unit

4 Maximum Junction-to-Ambienta, ct 10 sRthJA1520 C/WMaximum Junction-to-CaseSteady State Information: si7137dp -T1-GE3 (Lead (Pb)-free and Halogen-free) mmPowerPAK SO-8 Bottom ViewS G D P-Channel MOSFET Number: 69063S09-0865-Rev. D, 18-May-09 vishay SiliconixSi7137 DPNew ProductNotes:a. Pulse test; pulse width 300 s, duty cycle 2 %.b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operationof the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied.

5 Exposure to absolute maximumrating conditions for extended periods may affect device TJ = 25 C, unless otherwise notedParameter Symbol Test Conditions Min. StaticDrain-Source Breakdown VoltageVDSVGS = 0 V, ID = - 250 A - 20 VVDS Temperature Coefficient VDS/TJID = - 250 A - CVGS(th) Temperature Coefficient VGS(th) Threshold VoltageVGS(th) VDS = VGS, ID = - 250 A - LeakageIGSSVDS = 0 V, VGS = 12 V 100nAZero Gate Voltage Drain CurrentIDSSVDS = - 20 V, VGS = 0 V - 1 AVDS = - 20 V, VGS = 0 V, TJ = 55 C - 5On-State Drain CurrentaID(on) VDS - 10 V, VGS = - 10 V- 40 ADrain-Source On-State ResistanceaRDS(on)

6 VGS = - 10 V, ID = - 25 A VGS = - V, ID = - 20 A = - V, ID = - 15 A Transconductanceagfs VDS = - 10 V, ID = - 25 A95 SDynamicbInput CapacitanceCiss VDS = - 10 V, VGS = 0 V, f = 1 MHz20 000pFOutput CapacitanceCoss 2150 Reverse Transfer CapacitanceCrss 2650 Total Gate ChargeQg VDS = - 10 V, VGS = - 10 V, ID = - 20 A390585nCVDS = - 10 V, VGS = - V, ID = - 20 A188282 Gate-Source ChargeQgs ChargeQgd 46 Gate ResistanceRgf = 1 Tu r n - O n D e l a y T i m etd(on) VDD = - 10 V, RL = 1 ID - 10 A, VGEN = - 10 V, Rg = 1 2040nsRise Timetr1428 Turn-Off DelayTimetd(off) 230400 Fall Timetf72125Tu r n - O n D e l a y T i m etd(on) VDD = - 10 V, RL = 1 ID - 10 A, VGEN = - V, Rg = 1 100170 Rise Timetr150255 Turn-Off DelayTimetd(off) 230390 Fall Timetf110190 Drain-Source Body Diode CharacteristicsContinous Source-Drain Diode CurrentISTC = 25 C- 60 APulse Diode Forward CurrentISM- 100 Body Diode VoltageVSDIS = - 5 A, VGS = 0 V- Diode Reverse Recovery TimetrrIF = - 10 A, dI/dt = 100 A/ s, TJ = 25 C88140nsBody Diode Reverse Recovery ChargeQrr105160nCReverse Recovery Fall Timeta25nsReverse Recovery Rise Timetb63 Document Number.

7 69063S09-0865-Rev. D, SiliconixSi7137 DPNew ProductTYPICAL CHARACTERISTICS 25 C, unless otherwise notedOutput CharacteristicsOn-Resistance vs. Drain CurrentGate Drain-to-SourceVoltage (V)- Drain Current (A) 1632486480- On-Resistance ( )RDS(on)ID- Drain Current (A)VGS= VVGS= 20 A- Gate-to-Source Voltage (V)Qg- Total Gate Charge (nC)VGSVDS=10 VVDS=20 VVDS=15 VTransfer CharacteristicsCapacitanceOn-Resistance vs. Junction - 55 CTC= 25 CTC= 125 CVGS- Gate-to-SourceVoltage (V)- Drain Current (A)IDCrss0560011 20016 80022 40028 00005101520 CissVDS- Drain-to-SourceVoltage (V)C - Capacitance (pF)CossTJ-Junction Temperature ( C)(Normalized)- On-ResistanceRDS(on) 50- 250255075100125150ID= - 25 AVGS= Number: 69063S09-0865-Rev.

8 D, 18-May-09 vishay SiliconixSi7137 DPNew ProductTYPICAL CHARACTERISTICS 25 C, unless otherwise noted Source-Drain Diode Forward VoltageThreshold Source-to-DrainVoltage (V)- Source Current (A) 25 CTJ= 150 C- 50 - 25 0 25 50 75 100 125 150 Variance (V)VGS(th)TJ- Temperature ( C)ID= 250 AID= 1 mAOn-Resistance vs. Gate-to-Source VoltageSingle Pulse Power, On-Resistance ( )RDS(on)VGS- Gate-to-SourceVoltage (V)TJ=25 CTJ= 125 CID= - 25 (s)Power (W) Safe Operating DrainCurrent(A) Drain-to-SourceVoltage (V)*VGS> minimumVGSatwhich RDS(on)is specified1ms10 ms100 25 CSingle Pulse1sDC10 sBVDSSL imitedbyRDS(on)* vishay SiliconixSi7137 DPDocument Number: 69063S09-0865-Rev.

9 D, ProductTYPICAL CHARACTERISTICS 25 C, unless otherwise noted* The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upperdissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the Derating*036721081441800255075100125150T C- Case Temperature ( C)Package LimitedID- Drain Current (A)Power, Junction-to-Case025507510012502550751001 25150TC- Case Temperature ( C)Power (W)Power Derating, Ambient Temperature ( C)Power (W) Number: 69063S09-0865-Rev.

10 D, 18-May-09 vishay SiliconixSi7137 DPNew ProductTYPICAL CHARACTERISTICS 25 C, unless otherwise noted vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for SiliconTechnology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see Thermal Transient Impedance, Effective TransientThermal Cycle = :PDM1. Duty Cycle, D =2. Per Unit Base = RthJA=54 C/W3.