UNISONIC TECHNOLOGIES CO., LTD

1 UNISONIC TECHNOLOGIES CO., LTD 2SD1664 NPN SILICON TRANSISTOR 1 of 5 Copyright 2016 UNISONIC TECHNOLOGIES Co., Ltd MEDIUM POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1664 is an epitaxial planar type NPN silicontransistor. FEATURES *Low VCE(SAT): VCE (SAT)= (Typ.) (IC/IB= 500mA/50mA) * Complement the 2SB1132. ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing 2SD1664L-x-AB3-R 2SD1664G-x-AB3-R SOT-89 B C E Tape Reel2SD1664L-x-AE3-R 2SD1664G-x-AE3-R SOT-23 B E C Tape Reel2SD1664L-x-TN3-R 2SD1664G-x-TN3-R TO-252 B C E

2 Tape ReelNote: Pin Assignment: B: Base C: Collector E: Emitter 2SD1664 NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2 of 5 MARKING PACKAGE MARKING SOT-89 SOT-23 TO-252 2SD1664 NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO.

3 , LTD 3 of 5 ABSOLUTE MAXIMUM RATINGS (TA=25 C, unless otherwise specified) PARAMETER SYMBOL RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 32 V Emitter-Base Voltage VEBO 5 V

4 Collector Current DC 1 A Collector Current (Duty=1/2, PW=20ms) Pulse IC 2 A W W Collector Power Dissipation TO-252 PC W Junction Temperature TJ +150 C Storage Temperature TSTG -55 ~ +150 C Note Absolute maximum ratings are

5 Those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA=25 C, unless otherwise specified) PARAMETER SYMBOLTEST CONDITIONS MIN TYP MAX UNITC ollector Base Breakdown Voltage BVCBO IC= 50 A 40 V Collector Emitter Breakdown Voltage BVCEO IC= 1mA 32 V Emitter Base Breakdown Voltage BVEBO IE=50 A

6 5 V Collector Cut-Off Current ICBO VCB=20V A Emitter Cut-Off Current IEBO VEB= 4V A DC Current Gain hFE VCE= 3V, Ic= 100mA 82 390 Collector-Emitter Saturation Voltage VCE(SAT)

7 IC/IB=500mA /50mA V Transition Frequency fT VCE=5V, IE=-50mA, f=100 MHz 150 MHzOutput Capacitance Cob VCB= 10V, IE= 0A, f=1 MHz 15 pF CLASSIFICATION OF hFE RANK P Q R RANGE 82-180 120-270 180-390 2SD1664 NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO.

8 , LTD 4 of 5 TYPICAL CHARACTERISTICS Voltage, VBE(V)Grounded Emitter Propagation CharacteristicsCollector Current, IC(mA)20012 5102020050 Collector Current, IC(mA)DC Current Gain Current (I)DC Current Gain, =6 VTa=100 CTa=25 CTa= 55 C05000 Collector-Emitter Voltage, VCE(V)Grounded Emitter Output CharacteristicsCollector Current, IC(mA) =0mATa=25 100 200 50010005001000Ta=25 CVcE= 3 VVcE= 1V12 5102020050 Collector Current, IC(mA) DC Current Gain Current (II)DC Current Gain, hFE10050 100 200 500 10005001000 VcE= 3 VTa=100 CTa=25 CTa= -55 C12 5 Current, IC(mA)Collector-Emitter Saturation Voltage vs.

9 Collector Current (I)Collector Saturation Voltage, VCE(SAT) ( V) 100 200500 CIC/IB=10205010020002000IC/IB=50IC/IB=20 12 5 Current, IC(mA)Collector-Emitter Saturation Voltage vs. Collector Current (II)Collector Saturation Voltage:VCE(SAT) ( V) 100 200500 CTa=100 CTa=-40 CIC/ IB=10 2SD1664 NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 5 of 5 TYPICAL CHARACTERISTICS (Cont.) Voltage, VCE(V)Safe Operation AreaCollector Current, Ic (A) , t(s)Transient Thermal ResistanceTransient Thermal Resistance, RTH( C/W)1001001000101000-120 Emitter Current, IE(mA)Gain Bandwidth Product vs.

10 Emitter CurrentTransition Frequency, fT(MHz)50-2-5-20-50-10100200-100Ta=25 CVCE= to Base Voltage, VCB(V)Collector Output Capacitance VoltageCollector Output Capacitance, COB(pF)20121020550100f=1 MHzTa=25 CIB= *PW=10ms*DCTa=25 C*Single pulseTa=25 C5 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein.