IRFM250 JANTX2N7225 JANTXV2N7225 THRU-HOLE (TO …

1 PD-90554F. IRFM250 . JANTX2N7225 . POWER MOSFET JANTXV2N7225 . THRU-HOLE (TO-254AA) REF:MIL-PRF-19500/592. 200V, N-CHANNEL. Product Summary . HEXFET MOSFET TECHNOLOGY. Part Number RDS(on) ID. IRFM250 HEXFET MOSFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET. transistors also feature all of the well-established advantages TO-254AA. of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as Features: switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and n Simple Drive Requirements virtually any application where high reliability is required. n Ease of Paralleling The HEXFET transistor's totally isolated package eliminates n Hermetically Sealed the need for additional isolating material between the device n Electrically Isolated and the heatsink.

2 This improves thermal efficiency and n Dynamic dv/dt Rating reduces drain capacitance. n Light-weight Absolute Maximum Ratings Parameter Units ID @ VGS = 10V, TC = 25 C Continuous Drain Current ID @ VGS = 10V, TC = 100 C Continuous Drain Current 17 A. IDM Pulsed Drain Current 110. PD @ TC = 25 C Max. Power Dissipation 150 W. Linear Derating Factor W/ C. VGS Gate-to-Source Voltage 20 V. EAS Single Pulse Avalanche Energy 500 mJ. IAR Avalanche Current A. EAR Repetitive Avalanche Energy 15 mJ. dv/dt Peak Diode Recovery dv/dt V/ns TJ Operating Junction -55 to 150. T STG Storage Temperature Range C. Lead Temperature 300 ( in.( ) from case for 10s). Weight (Typical) g For footnotes refer to the last page 1. 10/25/11. IRFM250 . Electrical Characteristics @ Tj = 25 C (Unless Otherwise Specified). Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 200 V VGS = 0V, ID = BV DSS / T J Temperature Coefficient of Breakdown V/ C Reference to 25 C, ID = Voltage RDS(on) Static Drain-to-Source On-State VGS = 10V, ID = 17A.

3 Resistance VGS = 10V, ID = VGS(th) Gate Threshold Voltage V VDS = VGS, ID = 250 A. g fs Forward Transconductance S VDS = 15V, IDS = 17A . IDSS Zero Gate Voltage Drain Current 25 VDS= 160V ,VGS = 0V. A. 250 VDS = 160V, VGS = 0V, TJ = 125 C. IGSS Gate-to-Source Leakage Forward 100 VGS = 20V. nA. IGSS Gate-to-Source Leakage Reverse -100 VGS = -20V. Qg Total Gate Charge 115 VGS =10V, ID = Q gs Gate-to-Source Charge 22 nC VDS = 100V. Q gd Gate-to-Drain ( Miller') Charge 60. td(on) Turn-On Delay Time 35 VDD = 100V, ID = , tr Rise Time 190 VGS =10V, RG = . ns td(off) Turn-Off Delay Time 170. tf Fall Time 130. LS + LD Total Inductance nH Measured from drain lead (6 from package) to source lead (6 from package). Ciss Input Capacitance 3500 VGS = 0V, VDS = 25V. C oss Output Capacitance 700 pF f = C rss Reverse Transfer Capacitance 110 . CDC Drain-to-Case Capacitance 12 . Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) A.

4 ISM Pulse Source Current (Body Diode) 110. VSD Diode Forward Voltage V Tj = 25 C, IS = , VGS = 0V . trr Reverse Recovery Time 950 ns Tj = 25 C, IF = , di/dt 100A/ s Q RR Reverse Recovery Charge C VDD 50V . ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter Min Typ Max Units Test Conditions RthJC Junction-to-Case RthJCS Case-to-Sink C/W. RthJA Junction-to-Ambient 48 Typical socket mount Note: Corresponding Spice and Saber models are available on International Rectifier website. For footnotes refer to the last page 2 IRFM250 . Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3. IRFM250 . 13a & b Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage Fig 7.

5 Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 4 IRFM250 . RD. V DS. VGS. RG. +. -V DD. 10V. Pulse Width 1 s Duty Factor %. Fig 10a. Switching Time Test Circuit VDS. 90%. 10%. VGS. Fig 9. Maximum Drain Current Vs. td(on) tr t d(off) tf Case Temperature Fig 10b. Switching Time Waveforms 1. D = Thermal Response (Z thJC ). SINGLE PULSE PDM. (THERMAL RESPONSE). t1. t2. Notes: 1. Duty factor D = t 1 / t 2. 2. Peak T J = P DM x Z thJC + TC. 1 10. t1 , Rectangular Pulse Duration (sec). Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5. IRFM250 . 15V. L DRIVER. VDS. RG +. - VDD. IAS A. 1. 20V. tp . Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS. tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS. Current Regulator Fig 12b. Unclamped Inductive Waveforms Same Type as 50K . 12V. 0 .2 F. QG .3 F. 10 V +. V. QGS QGD - DS. VGS.

6 VG. 3mA. IG ID. Charge Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 IRFM250 . Footnotes: Repetitive Rating; Pulse width limited by ISD , di/dt 190A/ s, maximum junction temperature. VDD 200V, TJ 150 C. VDD = 50V, starting TJ = 25 C, L= Peak IL = , VGS = 10V. Pulse width 300 s; Duty Cycle 2%. Case Outline and Dimensions TO-254AA. [.005]. [.545] [.260]. [.149] [.535] [.249]. [.139] [.050]. [.040]. A. [.800]. [.685] [.790] B. [.665] [.545]. [.535]. 1 2 3. C [.570]. [.033]. [.510] MAX. [.045]. 3X. [.035] [.150]. [.150]. 2X [.014] B A. NOT ES: 1. DIMENSIONING & TOLERANCING PER ASME PIN ASSIGNMENTS. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 1 = DRAIN. 3. CONTROLLING DIMENSION: INCH. 2 = SOURCE. 4. CONFORMS TO JEDEC OUTLINE TO-254AA. 3 = GATE. CAUTION. BERYLLIA WARNING PER MIL-PRF-19500. Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust.

7 Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105. IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776. TAC Fax: (310) 252-7903. Visit us at for sales contact information. Data and specifications subject to change without notice. 10/2011. 7.