PD -91340A IRF520NS/L - Infineon Technologies

1 PD -91340A. IRF520NS/L . HEXFET Power MOSFET. l Advanced Process Technology l Surface Mount (IRF520NS) D. VDSS = 100V. l Low-profile through-hole (IRF520NL). l 175 C Operating Temperature l Fast Switching RDS(on) = . G. l Fully Avalanche Rated ID = S. Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

2 The D2 Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest D 2 P ak T O -26 2. possible on-resistance in any existing surface mount package. The D2 Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to in a typical surface mount application. The through-hole version (IRF520NL) is available for low-profile applications. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25 C Continuous Drain Current, VGS @ 10V ID @ TC = 100 C Continuous Drain Current, VGS @ 10V A. IDM Pulsed Drain Current 38.

3 PD @TA = 25 C Power Dissipation W. PD @TC = 25 C Power Dissipation 48 W. Linear Derating Factor W/ C. VGS Gate-to-Source Voltage 20 V. EAS Single Pulse Avalanche Energy 91 mJ. IAR Avalanche Current A. EAR Repetitive Avalanche Energy mJ. dv/dt Peak Diode Recovery dv/dt V/ns TJ Operating Junction and -55 to + 175. TSTG Storage Temperature Range C. Soldering Temperature, for 10 seconds 300 ( from case ). Thermal Resistance Parameter Typ. Max. Units R JC Junction-to-Case C/W. R JA Junction-to-Ambient ( PCB Mounted,steady-state)** 40. 5/13/98. IRF520NS/L . Electrical Characteristics @ TJ = 25 C (unless otherwise specified). Parameter Min.

4 Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 100 V VGS = 0V, ID = 250 A. V(BR)DSS/ TJ Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, ID = 1mA . RDS(on) Static Drain-to-Source On-Resistance VGS = 10V, ID = . VGS(th) Gate Threshold Voltage V VDS = V GS, ID = 250 A. gfs Forward Transconductance S VDS = 25V, ID = . 25 VDS = 100V, VGS = 0V. IDSS Drain-to-Source Leakage Current A. 250 VDS = 80V, VGS = 0V, TJ = 150 C. Gate-to-Source Forward Leakage 100 VGS = 20V. IGSS nA. Gate-to-Source Reverse Leakage -100 VGS = -20V. Qg Total Gate Charge 25 ID = Qgs Gate-to-Source Charge nC VDS = 80V. Qgd Gate-to-Drain ("Miller") Charge 11 VGS = 10V, See Fig.

5 6 and 13 . td(on) Turn-On Delay Time VDD = 50V. tr Rise Time 23 ID = ns td(off) Turn-Off Delay Time 32 RG = 22 . tf Fall Time 23 RD = , See Fig. 10 . Between lead, LS Internal Source Inductance nH. and center of die contact Ciss Input Capacitance 330 VGS = 0V. Coss Output Capacitance 92 pF VDS = 25V. Crss Reverse Transfer Capacitance 54 = , See Fig. 5 . Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D. IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current A integral reverse G. 38. (Body Diode) p-n junction diode. S. VSD Diode Forward Voltage V TJ = 25 C, IS = , VGS = 0V.

6 Trr Reverse Recovery Time 99 150 ns TJ = 25 C, IF = Qrr Reverse RecoveryCharge 390 580 nC di/dt = 100A/ s . ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD). Notes: Repetitive rating; pulse width limited by Pulse width 300 s; duty cycle 2%. max. junction temperature. ( See fig. 11 ). VDD = 25V, starting TJ = 25 C, L = Uses irf520n data and test conditions RG = 25 , IAS = (See Figure 12). ISD , di/dt 240A/ s, VDD V(BR)DSS, TJ 175 C. ** When mounted on FR-4 board using minimum recommended footprint. For recommended footprint and soldering techniques refer to application note #AN-994. IRF520NS/L .

7 100 VGS. 100 VGS. TO P 15V TOP 15V. 10V 10V. I , D rain-to-Source Current (A ). I , D ra in-to -S o urc e C u rren t (A ). BO TTOM BOTTOM 10 10. 4 .5V. D. D. 4 .5V. 2 0 s P U L S E W IDTH 2 0 s P U L S E W ID TH. T C = 25 C T C = 17 5 C. 1 A 1 A. 1 10 100 1 10 100. V D S , D rain-to-S ource V oltage (V ) V DS , D rain-to-S ource V oltage (V ). Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 I D = 9 .5A. R D S (on) , Drain-to-S ource O n Resistance I D , D rain-to-So urce C urren t (A ). TJ = 25 C. (N orm alized). TJ = 1 7 5 C. 10 V DS = 5 0V. 2 0 s P U L S E W ID TH V G S = 10 V. 1 A. A. 4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180.

8 V G S , G ate-to -So urce Voltag e (V) T J , Junction T em perature ( C ). Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRF520NS/L . 600 20. V GS = 0V , f = 1M H z I D = A. C is s = C g s + C g d , Cd s S H O R T E D V D S = 80 V. V G S , G ate-to-S ource V oltage (V ). C rs s = C gd V D S = 50 V. 500. C o ss = C d s + C gd 16 V D S = 20 V. C iss C , Capacitance (pF). 400. 12. 300 C oss 8. 200. C rss 4. 100. FO R TE S T C IR C U IT. S E E FIG U R E 1 3. 0 A 0 A. 1 10 100 0 5 10 15 20 25. V D S , D rain-to-S ourc e V oltage (V ) Q G , T otal G ate C harge (nC ). Fig 5. Typical Capacitance Vs.

9 Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 100 100. O P E R A TIO N IN TH IS A R E A LIM ITE D. B Y R D S (o n). I SD , Reverse D rain C urrent (A). 10 s I D , Drain C urrent (A ). 10. 100 s TJ = 17 5 C. 10. TJ = 2 5 C. 1m s 1. 10m s T C = 25 C. T J = 17 5 C. V G S = 0V S ing le P u lse 1 A A. 1 10 100 1000. V S D , S ourc e-to-D rain V oltage (V ) V D S , D rain-to-S ource V oltage (V ). Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage IRF520NS/L . RD. VDS. VGS. RG. +. -VDD. I D , Drain Current (A). 10V. Pulse Width 1 s Duty Factor %. Fig 10a. Switching Time Test Circuit VDS.

10 90%. 25 50 75 100 125 150 175. TC , Case Temperature ( C) 10%. VGS. td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms Case Temperature 10. Thermal Response (Z thJC ). D = 1. SINGLE PULSE P DM. (THERMAL RESPONSE). t1. t2. Notes: 1. Duty factor D = t 1 / t 2. 2. Peak T J = P DM x Z thJC + TC. t1 , Rectangular Pulse Duration (sec). Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case IRF520NS/L . 200. ID. E A S , S ingle P ulse A valanche E nergy (m J). TO P 2 .3 A. A. 1 5V. 160 B O TTO M 5 .7A. L D R IV E R. VDS. 120. RG D .U .T +. V. - DD 80. IA S A. 20V. tp 0 .0 1 . 40. Fig 12a.