IRFL4315 SMPS MOSFET - Infineon Technologies

1 PD - 94445. smps MOSFET . IRFL4315 . HEXFET Power MOSFET . Applications VDSS RDS(on) max ID. l High frequency DC-DC converters 150V @VGS = 10V 185m . Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001). l Fully Characterized Avalanche Voltage S O T -2 2 3. and Current Absolute Maximum Ratings Parameter Max. Units ID @ TA = 25 C Continuous Drain Current, VGS @ 10V ID @ TA = 70 C Continuous Drain Current, VGS @ 10V A. IDM Pulsed Drain Current 21. PD @TA = 25 C Power Dissipation W. Linear Derating Factor W/ C. VGS Gate-to-Source Voltage 30 V. dv/dt Peak Diode Recovery dv/dt V/ns TJ Operating Junction and -55 to + 150. TSTG Storage Temperature Range C. Soldering Temperature, for 10 seconds 300 ( from case ).

2 Thermal Resistance Symbol Parameter Typ. Max. Units R JA Junction-to-Ambient (PCB Mount, steady state) 45 C/W. Notes through are on page 8. 1. 06/14/02. IRFL4315 . Static @ TJ = 25 C (unless otherwise specified). Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 150 V VGS = 0V, ID = 250 A. V(BR)DSS/ TJ Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, ID = 1mA . RDS(on) Static Drain-to-Source On-Resistance 185 m VGS = 10V, ID = . VGS(th) Gate Threshold Voltage V VDS = VGS, ID = 250 A. 25 VDS = 150V, VGS = 0V. IDSS Drain-to-Source Leakage Current A. 250 VDS = 120V, VGS = 0V, TJ = 125 C. Gate-to-Source Forward Leakage 100 VGS = 30V. IGSS nA. Gate-to-Source Reverse Leakage -100 VGS = -30V. Dynamic @ TJ = 25 C (unless otherwise specified). Parameter Min. Typ.

3 Max. Units Conditions gfs Forward Transconductance S VDS = 50V, ID = Qg Total Gate Charge 12 19 ID = Qgs Gate-to-Source Charge nC VDS = 120V. Qgd Gate-to-Drain ("Miller") Charge 10 VGS = 10V. td(on) Turn-On Delay Time VDD = 75V. tr Rise Time 21 ns ID = td(off) Turn-Off Delay Time 20 RG = 15 . tf Fall Time 19 VGS = 10V . Ciss Input Capacitance 420 VGS = 0V. Coss Output Capacitance 100 VDS = 25V. Crss Reverse Transfer Capacitance 25 pF = Coss Output Capacitance 720 VGS = 0V, VDS = , = Coss Output Capacitance 48 VGS = 0V, VDS = 120V, = Coss eff. Effective Output Capacitance 98 VGS = 0V, VDS = 0V to 120V . Avalanche Characteristics Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy 38 mJ. IAR Avalanche Current A. Diode Characteristics Parameter Min. Typ. Max. Units Conditions D. IS Continuous Source Current MOSFET symbol (Body Diode) showing the A.

4 ISM Pulsed Source Current integral reverse G. 21. (Body Diode) p-n junction diode. S. VSD Diode Forward Voltage V TJ = 25 C, IS = , VGS = 0V . trr Reverse Recovery Time 61 91 ns TJ = 25 C, IF = Qrr Reverse RecoveryCharge 160 240 nC di/dt = 100A/ s . 2 IRFL4315 . 100 100. VGS VGS. TOP 15V TOP 15V. 12V 12V. 10V 10V. ID , Drain-to-Source Current (A). ID , Drain-to-Source Current (A). 10 10 BOTTOM BOTTOM 1 1. 20 s PULSE WIDTH 20 s PULSE WIDTH. Tj = 25 C Tj = 150 C. 1 10 100 1 10 100. VDS , Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V). Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics . I D = ID , Drain-to-Source Current ( ). R DS(on) , Drain-to-Source On Resistance (Normalized). T J = 150 C. T J = 25 C. VDS = 50V. 20 s PULSE WIDTH . V GS = 10V. -60 -40 -20 0 20 40 60 80 100 120 140 160.

5 TJ , Junction Temperature ( C). VGS, Gate-to-Source Voltage (V). Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3. IRFL4315 . 10000 12. VGS = 0V, f = 1 MHZ ID= Ciss = Cgs + Cgd, Cds SHORTED. VDS= 120V. VGS, Gate-to-Source Voltage (V). Crss = Cgd 10. Coss = Cds + Cgd VDS= 75V. VDS= 30V. C, Capacitance(pF). 1000 8. C iss 6. 100 C oss 4. 2. C rss FOR TEST CIRCUIT. SEE FIGURE 13. 10 0. 1 10 100 1000 0 2 4 6 8 10 12 14. VDS , Drain-to-Source Voltage (V) QG Total Gate Charge (nC). Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 100 100. OPERATION IN THIS AREA. LIMITED BY R DS (on). ID, Drain-to-Source Current (A).. TJ = 150 C. 10 10. I SD, Reverse Drain Current (A). 100 sec . T J= 25 C. 1 1. 1msec Tc = 25 C.

6 Tj = 150 C 10msec . V GS = 0 V. Single Pulse 1 10 100 1000. V SD,Source-to-Drain Voltage (V). VDS , Drain-to-Source Voltage (V). Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 4 IRFL4315 . RD. VDS. VGS. RG. +. -VDD. ID , Drain Current (A). 10V. Pulse Width 1 s Duty Factor %. Fig 10a. Switching Time Test Circuit VDS. 90%. 25 50 75 100 125 150.. TA , Ambient Temperature ( C). 10%. VGS. Fig 9. Maximum Drain Current Vs. td(on) tr t d(off) tf Ambient Temperature Fig 10b. Switching Time Waveforms 100. (Z thJA ). D = 10 Thermal Response . P DM. 1. t1. t2. SINGLE PULSE. (THERMAL RESPONSE). Notes: 1. Duty factor D =. 2. Peak T J. t1 / t 2. = P DM x Z thJA +TA. 1 10 100. t 1, Rectangular Pulse Duration (sec). Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5.

7 IRFL4315 . R DS(on) , Drain-to -Source On Resistance (m ). R DS (on) , Drain-to-Source On Resistance (m ). 240 4000. 220 3500. 3000. 200. 2500. 180 VGS = 10V. 2000. 160. 1500. 140. 1000. ID = 120 500. 100 0. 0 5 10 15 20 25 ID , Drain Current (A) VGS, Gate -to -Source Voltage (V). Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage Current Regulator Same Type as QG. 50K VGS. 12V .2 F..3 F QGS QGD. +. V.. - DS. VG 100. VGS ID. 3mA Charge TOP IG ID. Current Sampling Resistors 80 BOTTOM EAS , Single Pulse Avalanche Energy (mJ). Fig 14a&b. Basic Gate Charge Test Circuit 60. and Waveform 40. 15 V. V (B R )D S S. L DRIVE R. tp VD S 20. RG D .U .T +. V. - DD. IA S A. 20V 0. tp 25 50 75 100 125 150. IAS. Starting Tj, Junction Temperature ( C). Fig 15a&b. Unclamped Inductive Test circuit Fig 15c.

8 Maximum Avalanche Energy and Waveforms Vs. Drain Current 6 IRFL4315 . Package Outline SOT-223 (TO-261AA) Outline Part Marking Information SOT-223 E X A M P L E : T H IS IS A N IR FL 0 14. W A FER. P A R T NU M B E R LO T CO D E. F L0 14. XXXXXX. IN TE RN A TIO NA L 31 4. RE CT IF IE R D A TE CO D E (Y W W ). LO G O Y = LA S T D IG IT O F TH E Y E A R. TOP W W = W E EK B O TT O M. 7. IRFL4315 . Tape & Reel Information SOT-223 Outline 4 .1 0 (.1 61) 0 .35 (.0 1 3). 3 .9 0 (.1 54) 1 .85 (.07 2 ). 2 .0 5 (.0 80 ) 1 .65 (.06 5 ) 0 .25 (.0 1 0). TR 1 .9 5 (.0 77 ). 5 (.2 9 7). 5 (.2 9 4). 1 6 .3 0 (.6 4 1). 7 .6 0 (.2 99 ) 1 5 .7 0 (.6 1 9). 7 .4 0 (.2 92 ). 1 .6 0 (.0 62). 1 .5 0 (.0 59). TY P . F E E D D IR EC T IO N. 7 .1 0 (.2 79 ) (.0 90 ). 6 .9 0 (.2 72 ) (.0 83 ). 12 .10 (.47 5). 11 .90 (.46 9). N OTES : 1.

9 C O N T R O L L ING D IM E N S IO N : M IL LIM E TE R . 2 . O U T LIN E C O N F O R M S T O E IA -48 1 & E IA -54 1. 3 . E A C H O 3 0 (13 .00 ) R E E L C O N T A IN S 2,5 00 D E V IC E S . 1 3 .20 (.51 9 ) 1 (.6 07). 1 2 .80 (.50 4 ) 1 (.4 69). 4. 0 (1 .9 6 9). ( ) M IN . M AX. 18 .40 ( .72 4). N O TE S : MAX. 1 . O U T L IN E C O M F O R M S T O E IA -4 18 -1 . 2 . C O N T R O LL IN G D IM EN S IO N : M IL L IM E T E R .. 1 0 (.5 6 6) 4. 3 . D IM EN S IO N M E A S U R E D @ H U B . 1 0 (.4 8 8). 4 . IN C L U D E S F L A N G E D IS T O R T IO N @ O U T E R ED G E . 3. Notes: Repetitive rating; pulse width limited by When mounted on 1 inch square copper board. max. junction temperature. Coss eff. is a fixed capacitance that gives the same charging time Starting TJ = 25 C, L = as Coss while VDS is rising from 0 to 80% VDSS.

10 RG = 25 , IAS = ISD , di/dt 230A/ s, VDD V(BR)DSS, Pulse width 400 s; duty cycle 2%. TJ 150 C. Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105. TAC Fax: (310) 252-7903. Visit us at for sales contact 8