30V N-Channel AlphaMOS - Alpha & Omega Semiconductor

1 AON650830V N-Channel AlphaMOSG eneral DescriptionProduct SummaryVDS ID (at VGS=10V)32A RDS(ON) (at VGS=10V)< RDS(ON) (at VGS = )< 5m Application100% UIS Tested100% Rg TestedSymbolVDSVGS30V 20 Gate-Source VoltageVMaximumUnitsParameter30 VDrain-Source Voltage Latest Trench power AlphaMOS ( MOS LV) technology Very Low RDS(on) at Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant DC/DC Converters in Computing, Servers, and POL Isolated DC/DC Converters in Telecom and IndustrialAbsolute Maximum Ratings TA=25 C unless otherwise notedG DSTop View12348765 PIN1 DFN5X6 Top ViewBottom ViewVGSIDMIASEASVDS SpikeVSPIKETJ.

2 TSTGS ymbolt 10sSteady-StateSteady-StateR JCmJMaximum Junction-to-Ambient A C/WR JA245330 UnitsParameterTypA128 CThermal CharacteristicsPulsed Drain Current C29 ATA=25 C-55 to 150 AMax46 Avalanche energy L= CAvalanche Current C23 Junction and Storage Temperature Range53 Continuous DrainCurrentTA=70 CV 20 Gate-Source VoltageContinuous DrainCurrentGIDSM3225TC=25 CTC=100 CIDP ower Dissipation APDSMW16TC=100 CPD41TC=25 CPower Dissipation B C/W C/WMaximum Junction-to-Ambient A Junction-to-CaseVWTA=70 100ns36 : January 2013 1 of 6 SymbolMinTypMaxUnitsBVDSS30 VVDS=30V, VGS=0V1TJ=55 C5 IGSS100nAVGS(th)Gate Threshold Qg(10V)3649nCQg( )1723nCQgs6nCQgd8nCtD(on) Source ChargeOutput CapacitanceTurn-Off DelayTimeRDS(ON)

3 Static Drain-Source On-ResistanceGate resistanceForward TransconductanceSWITCHING PARAMETERSTurn-On DelayTimeVGS=0V, VDS=0V, f=1 MHzTotal Gate ChargeVGS=10V, VDS=15V, ID=20 ATurn-On Rise TimeGate Drain ChargeTotal Gate ChargeVGS=10V, VDS=15V, RL= ,R=3 AZero Gate Voltage Drain Currentm Reverse Transfer CapacitanceVGS=0V, VDS=15V, f=1 MHzVDS=VGS, ID=250 AVDS=5V, ID=20 AInput CapacitanceDYNAMIC PARAMETERSD rain-Source Breakdown VoltageElectrical Characteristics (TJ=25 C unless otherwise noted)STATIC PARAMETERSP arameterConditionsID=250 A, VGS=0 VIDSSGate-Body leakage currentVDS=0V, VGS= 20 VIS=1A,VGS=0 VMaximum Body-Diode Continuous CurrentDiode Forward VoltageVGS= , ID=20 AVGS=10V, ID=20 AtD(off) PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET.

4 APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINGOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT Fall TimeTurn-Off DelayTimeBody Diode Reverse Recovery ChargeBody Diode Reverse Recovery TimeIF=20A, dI/dt=500A/ sIF=20A, dI/dt=500A/ sRGEN=3 A. The value of R JAis measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25 C. The power dissipation PDSMis based on R JAand the maximum allowed junction temperature of 150 C.

5 The value in any given application depends on the user's specific board The power dissipation PDis based on TJ(MAX)=150 C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150 The R JAis the sum of the thermal impedance from junction to case R JCand case to The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150 C.

6 The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25 C. : January 2013 2 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS0510152025303540455001234 56ID(A)VGS(Volts)Figure 2: Transfer Characteristics (Note E)0123456051015202530 RDS(ON)(m )ID(A)Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) On-ResistanceTemperature ( C)Figure 4: On-Resistance vs. Junction Temperature (Note E)VGS= C125 CVDS=5 VVGS= (A)VDS(Volts)Fig 1: On-Region Characteristics (Note E)VGS= + + + (A)VSD(Volts)Figure 6: Body-Diode Characteristics (Note E)25 C125 C(Note E)02468246810 RDS(ON)(m )VGS(Volts)Figure 5: On-Resistance vs.

7 Gate-Source Voltage (Note E)ID=20A25 C125 C : January 2013 3 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS1752100180246810010203040 50 VGS(Volts)Qg(nC)Figure 7: Gate-Charge Characteristics0500100015002000250030000 510152025 Capacitance (pF)VDS(Volts)Figure 8: Capacitance (W)Pulse Width (s)Figure 10: Single Pulse power Rating Junction-to-Case (Note F)CossCrssVDS=15 VID=20 ATJ(Max)=150 CTC=25 C10 (Amps)VDS(Volts)Figure 9: Maximum Forward Biased Safe Operating Area (Note F)10 s1msDCRDS(ON) TJ(Max)=150 CTC=25 C100 s10ms40(Note F) JCNormalized Transient Thermal ResistancePulse Width (s)Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)Single PulseD=Ton/TTJ,PK=TC+ JCTonTPDIn descending orderD= , , , , , , single pulseOperating Area (Note F)R JC=3 C/W : January 2013 4 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS0102030405002550751001251 50 power Dissipation (W)TCASE( C)Figure 12.

8 power De-rating (Note F)010203040500255075100125150 Current rating ID(A)TCASE( C)Figure 13: Current De-rating (Note F) (W)Pulse Width (s)Figure 14: Single Pulse power Rating Junction-to-Ambient (Note H)TA=25 JANormalized Transient Thermal ResistancePulse Width (s)Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)Single PulseD=Ton/TTJ,PK=TA+ JATonTPDIn descending orderD= , , , , , , single pulseAmbient (Note H)R JA=64 C/W : January 2013 5 of 6 -+VDCIgVdsDUT-+VDCVgsVgs10 VQgQgsQgdChargeGate Charge Test Circuit & Waveform-+VDCDUTVddVgsVdsVgsRLRgVgsVds10 %90%Resistive Switching Test Circuit & Waveformsttrd(on)tontd(off)tftoffLUnclam ped Inductive Switching (UIS) Test Circuit & WaveformsVddVgsIdVgsRgDUT-+VDCLVgsVdsIdV gsBVIIgVgs-+VDCDUTLVdsVgsVdsIsdIsdDiode Recovery Test Circuit & WaveformsVds -Vds +IFARDSS2E = 1/2 LIdI/dtIRMrrVddVddQ = - IdtARARtrr : January 2013 6 of 6