Transcription of ZVP2106A P-channel enhancement mode vertical DMOS …
1 P-channel ENHANCEMENTMODE vertical DMOS FETISSUE 2 MARCH 94 FEATURES*60 Volt VDS*RDS(on)=5 ABSOLUTE MAXIMUM VoltageVDS-60 VContinuous Drain Current at Tamb=25 CID-280mAPulsed Drain CurrentIDM-4 AGate Source Voltage VGS 20 VPower Dissipation at Tamb=25 CPtot700mWOperating and Storage Temperature RangeTj:Tstg-55 to +150 CELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated).PARAMETERSYMBOL MIN. MAX. UNIT BreakdownVoltageBVDSS-60 VID=-1mA, VGS=0 VGate-Source ThresholdVoltageVGS(th) , VDS= VGSGate-Body LeakageIGSS20nAVGS= 20V, VDS=0 VZero Gate Voltage A AVDS=-60 V, VGS=0 VDS=-48 V, VGS=0V, T=125 C(2)On-State Drain Current(1)ID(on)-1 AVDS=-18 V, VGS=-10 VStatic Drain-Source On-StateResistance (1)RDS(on)5 VGS=-10V,ID=-500mAForward Transconductance(1)(2)gfs150mSVDS=-18V,I D=-500mAInput Capacitance (2)Ciss100pFCommon Source OutputCapacitance (2)
2 Coss60pFVDS=-18V, VGS=0V, f=1 MHzReverse TransferCapacitance (2)Crss20pFTurn-On Delay Time (2)(3)td(on)7nsVDD -18V, ID=-500mARise Time (2)(3)tr15nsTurn-Off Delay Time (2)(3)td(off)12nsFall Time (2)(3)tf15ns(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2%(2) Sample test.(3)Switching times measured with 50 source impedance and <5ns rise time on a pulse generatorE-LineTO92 CompatibleZVP2106A3-417D G STYPICAL CHARACTERISTICSO utput Characteristics VDS - Drain Source Voltage (Volts) ID(On) -On-State Drain Current (Amps)Transfer CharacteristicsNormalised RDS(on)and VGS(th)vs TemperatureNormalised RDS(on)and VGS(th) -40-20 0 20 40 60 80120100140 Resistance RDS(on) Gate Threshold Voltage VGS(th)
3 ID= -4-6-8-100-10-20-30-40-50 Saturation Characteristics VDS-Drain Source Voltage (Volts)Voltage Saturation Characteristics VGS-Gate Source Voltage (Volts)-10V ID(On)-On-State Drain Current (Amps)VGS-Gate Source Voltage (Volts)VGS=-10 VID=-1mAVGS= ID(On) -On-State Drain Current (Amps)VDS - Drain Source Voltage (Volts) On-resistance v drain current ID-Drain Current (Amps) RDS(ON) -Drain Source Resistance ( ) 0-10-6-2-4-80-2 -4 -6 -8 -10ID= VGS=-5V -8V -10V -9V Tj-Junction Temperature ( C)ZVP2106A3-418P- channel ENHANCEMENTMODE vertical DMOS FETISSUE 2 MARCH 94 FEATURES*60 Volt VDS*RDS(on)=5 ABSOLUTE MAXIMUM VoltageVDS-60 VContinuous Drain Current at Tamb=25 CID-280mAPulsed Drain CurrentIDM-4 AGate Source Voltage VGS 20 VPower Dissipation at Tamb=25 CPtot700mWOperating and Storage Temperature RangeTj.
4 Tstg-55 to +150 CELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated).PARAMETERSYMBOL MIN. MAX. UNIT BreakdownVoltageBVDSS-60 VID=-1mA, VGS=0 VGate-Source ThresholdVoltageVGS(th) , VDS= VGSGate-Body LeakageIGSS20nAVGS= 20V, VDS=0 VZero Gate Voltage A AVDS=-60 V, VGS=0 VDS=-48 V, VGS=0V, T=125 C(2)On-State Drain Current(1)ID(on)-1 AVDS=-18 V, VGS=-10 VStatic Drain-Source On-StateResistance (1)RDS(on)5 VGS=-10V,ID=-500mAForward Transconductance(1)(2)gfs150mSVDS=-18V,I D=-500mAInput Capacitance (2)Ciss100pFCommon Source OutputCapacitance (2)
5 Coss60pFVDS=-18V, VGS=0V, f=1 MHzReverse TransferCapacitance (2)Crss20pFTurn-On Delay Time (2)(3)td(on)7nsVDD -18V, ID=-500mARise Time (2)(3)tr15nsTurn-Off Delay Time (2)(3)td(off)12nsFall Time (2)(3)tf15ns(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2%(2) Sample test.(3)Switching times measured with 50 source impedance and <5ns rise time on a pulse generatorE-LineTO92 CompatibleZVP2106A3-417D G STYPICAL CHARACTERISTICSO utput Characteristics VDS - Drain Source Voltage (Volts) ID(On) -On-State Drain Current (Amps)Transfer CharacteristicsNormalised RDS(on)and VGS(th)vs TemperatureNormalised RDS(on)and VGS(th) -40-20 0 20 40 60 80120100140 Resistance RDS(on) Gate Threshold Voltage VGS(th)
6 ID= -4-6-8-100-10-20-30-40-50 Saturation Characteristics VDS-Drain Source Voltage (Volts)Voltage Saturation Characteristics VGS-Gate Source Voltage (Volts)-10V ID(On)-On-State Drain Current (Amps)VGS-Gate Source Voltage (Volts)VGS=-10 VID=-1mAVGS= ID(On) -On-State Drain Current (Amps)VDS - Drain Source Voltage (Volts) On-resistance v drain current ID-Drain Current (Amps) RDS(ON) -Drain Source Resistance ( ) 0-10-6-2-4-80-2 -4 -6 -8 -10ID= VGS=-5V -8V -10V -9V Tj-Junction Temperature ( C)ZVP2106A3-418 TYPICAL CHARACTERISTICS Transconductance v drain current ID- Drain Current (Amps)gfs-Transconductance (mS) 0Q-Charge (nC)Transconductance v gate-source voltage VGS-Gate Source Voltage (Volts)gfs-Transconductance (mS) 0-10-20-30 VDS-Drain Source Voltage (Volts)Capacitance v drain-source voltage C-Capacitance (pF) CossVGS-Gate Source Voltage (Volts)
7 Gate charge v gate-source voltage -6-8-10-14-16-12-4-20 VDS= -20V-30V -50V 0 VDS=-10V200150 100502503000 -2 -4-6-8-10 0 VDS=-10V20015010050250300 ZVP2106A3-419
