10 - 8 章 圧力センサ - ieice-hbkb.org

1 10 8 2 . 10 - 8 . 2 .. 2-1 . 2-2 . 2-3 . 2-4 . 2-5 . 2-6 . 2-7 . 2019 1/(22). 10 8 2 . 10 8 2 . 2-1 . [2013 9 ]. pressure .. SI Pa N/m2 .. mmHg . pressure Gauge . bourdon Tube . Aneroid 2 .. pressure Sensor .. Semiconductor pressure Sensor .. 1964 . 1) IC 1960 . MEMS Micro Electro Mechanical Systems .. MEMS . MEMS .. 2019 2/(22). 10 8 2 . 10 8 2 . 2-2 . [2013 9 ]. 2 1 . Diaphragm .. pressure diaphragm (a) half-cut picture silicon substrate (b) cross section 2 1 . 2-2-1 . Crystal Anisotropic Etching .. SiO2.

2 (a) mask layer Si deposition . <100> SiO2. <110> . <111> . (b) patterning IC . (100) <110> . Alkali etchant (111) . (111) (111) (c) etching 55 (100). (111) 4 . (100) .. 55 Alkali etchant (d) thickness 2) 2 2 (111) (111). control 100 m (100). mm diaphragm 2 2 . m 10 m . 2019 3/(22). 10 8 2 . 500 m . IC .. KOH . TMAH . 70 100 .. Silicon Oxide Film Silicon Nitride Film . KOH 100 m .. 55 .. 90 DRIE Deep Reactive Ion Etching . DRIE . (110) 3) (111) .. B .. 4),5) . Si/SiO2/Si 3 SOI Silicon on insulator . SOI . SiO2.

3 SiO2 .. SOI .. 2-2-2 . 2 3 2 . 2 Wafer Bonding .. 2019 4/(22). 10 8 2 .. Si glass (a) patterning (b) anodic bonding diaphragm (c) thinning cavity 2 3 .. 2-2-3 . Surface Micromachining . 2 4 . Sacrificial Layer .. Etching Hole .. Sealing . LPCVD Low- pressure Chemical Vapor Deposition .. 6) . 4) .. 7) .. 2019 5/(22). 10 8 2 . SiO2. (a) sacrificial layer Si depo / pattern poly-Si (b) diaphragm layer deposition (c) etching hole formation (d) sacrificial layer etching diaphragm poly-Si (e) sealing cavity 2 4.

4 CMOS IC . 2019 6/(22). 10 8 2 . 10 8 2 . 2-3 . [2013 9 ]. 2-3-1 . Piezoresistive Effect . 10 100 .. 1960 8) 10) . 1960 p-n .. Piezoresistive Gauge 11) . Piezoresistive pressure Sensor .. 3 1 n p p 44 3) (100) . <110> <110> .. (a) top view l t <110>. current metal wiring (b) cross section passivation p-type gauge layer p+ contact n-type substrate 3 1 (a) (b). R 0 R . / 0 1 1 + + 3 1 . l t . <110> l t l t 44/2 . 9) 4 4 . 3 2(a) 2 . 2019 7/(22). 10 8 2 . l t 3 2(b) Wheatstone .. Meander (100) 4 . 11) . diaphragm piezoresistive gauges l t l t (100) silicon substrate (a) gauge configuration voltage supply V output (b) bridge circuit 3 2 (a) (b).

5 (110) <110> <111> . 3) .. 10).. p-n . IC . Contact Hole . Ohmic Contact . IC .. 2-3-2 . Capacitive pressure Sensor . 2019 8/(22). 10 8 2 .. 2 . S d C.. = 0 3 2 .. d 0 . 3 3 . pressure diaphragm C output capacitive electrodes / gap 3 3 .. 5) . 2-3-3 . pressure Resonator . resonator .. Resonant pressure Sensor . 3 4 .. magnetic field . current vibrating resonator .. strain .. 3 4 . 12). 10 kHz . 2019 9/(22). 10 8 2 .. 13).. 2-3-4 . Optical Detection .. 2019 10/(22). 10 8 2 . 10 8 2 . 2-4 . [2013 9 ]. 2-4-1.

6 3 . p1 p2 p1 . p2 . pressure p1 pressure p1 pressure p1. package package package sensor sensor sensor cavity pressure p2=0. atmospheric pressure p2=pa pressure p2. (a) absolute pressure (b) gauge pressure sensor (c) differential pressure sensor sensor 4 1 3 (a) (b) (c) . Absolute pressure Sensor 4 1(a) p2 0 p1 . 1 p2 0 .. 2 .. Differential pressure Sensor 4 1(c) p1 p2 2 . p1 p2 .. Gauge pressure Sensor 4 . 1(b) p2 p2 . p1 pressure Gauge .. 2019 11/(22). 10 8 2 . Negative pressure . 2-4-2 . 1 2 . Package.

7 4 2 . Anodic Bonding .. Corning Pyrex 7740 . Hoya SD2 .. Temperature Compensation Wafer Level Packaging .. sensor chip thermal stress glass adhesive instability package 4 2 .. Kovar . 14) .. 2019 12/(22). 10 8 2 .. 2-4-3 .. 4 3 .. pressure port silicone gel sensor chip glass package 4 3 . 4 4 .. pressure port diaphragm seal silicone oil sensor chip glass package 4 4 . 2019 13/(22). 10 8 2 . 10 8 2 . 2-5 . [2013 9 ]. 2-5-1 .. 5 1 a t . p d . 1 4. = 5 1 . 3.. 2. = 5 2 . 2. E 15) 2 .. uniform pressure p thickness t a edge length a (a) square diaphragm p maximum stress s maximum deflection d (b) cross section 5 1 4.

8 1 GPa 16) 100 MPa 1 GPa . 17) .. 2019 14/(22). 10 8 2 .. 700 .. - .. 5 1 18),19) 20) 22) . 5 2 .. 1 <110> . <110> .. 5 1 25 . GPa . c11 c12 c44 5 2 . GPa (100) . <100> <110> <111> .. 23) .. 2019 15/(22). 10 8 2 .. 14),24) .. 2-5-2 .. p1 p2 p1 . p2 14) . 2019 16/(22). 10 8 2 . 10 8 2 . 2-6 . [2013 9 ]. 2-6-1 .. GPS . 1 m hPa .. GPS . 25).. 10 hPa . 100 m .. 2-6-2 .. 2-6-3 .. 2007 TPMS Tire pressure Monitoring System TPMS .. 2-6-4 .. 2019 17/(22). 10 8 2 .. 2-6-5 .. Microphone . 102 Pa .. 6 1 .. Backplate.

9 26) . sound pressure diaphragm C output backplate electrode 6 1 MEMS . DC AC . Piezoelectric Film Electret .. 2019 18/(22). 10 8 2 .. Silicon Microphone . MEMS IC 1 .. 27) . 2019 19/(22). 10 8 2 . 10 8 2 . 2-7 . [2013 9 ]. Transducers 2 . 7 1 28),29) . 7 1 Transducers 2011 2013 . First Author Diaphragm fabrication Sensing Paper No. Name Country Method Material method Transducers '11. J. Wang China Sacrificial Si Piezoresistive Y. Zhang USA Etching poly-Si Capacitive X. C. Hao Japan Bonding Si Capacitive C.

10 Z. Wei China Sacrificial SiN Piezoresistive H. -D. Ngo Germany Etching Si Piezoresistive R. Surapaneni USA Sacrificial Parylene Capacitive M. Baumann Germany Bonding Si / glass Piezoresistive P. Gonzalez Belgium Sacrificial poly-SiGe Piezoresistive C. -F. Chiang USA Sacrificial Si Capacitive Q. Li China Etching Si Resonant H. Takahashi Japan Etching Si Piezoresistive S. Jin USA Sacrificial SiC Capacitive N. Minh-Dung Japan Etching Si Piezoresistive M. D. Zhou USA Etching Parylene Optical A. Pr mm Germany Bonding Si ?