1200 V DS CCS020M12CM2

1 Copyright 2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree , the Cree logo, Wolfspeed , and the Wolfspeed logo are registered trademarks of Cree, 2, 2020-12-04 CCS020M12CM2 4600 Silicon Dr., Durham, NC 27703 CCS020M12CM21200 V, 20 A All-Silicon Carbide Six-Pack (Three Phase) ModuleTechnical Features Ultra-Low Loss High-Frequency Operation Zero Reverse Recovery from Diodes Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device Operation Copper Baseplate and Aluminum Nitride Insulator VDS 1200 V IDS 20 ASystem Benefits Fast Time-to-Market with Minimal Development Required for Transition from 45mm IGBT Packages Increased System Efficiency, due to Low Switching & Conduction Losses of SiC Enables Compact and Lightweight SystemsApplications 3-Phase PFC Regen Drive Solar & Renewable Energy Industrial Automation & testing Motor DrivePackage 45 mm X mm X mmMaximum parameters (Verified by Design) ConditionsNoteVDS maxDrain-Source Voltage1200 VVGS maxGate-Source voltage , Maximum Value-10+25 Transient, <100 nsFig.

2 33 VGS opGate-Source voltage , Recommended Op. Value-5+20 StaticIDS DC Continuous Drain-Source Current34 AVGS = 20 V, TC = 25 C, TVJ 150 CFig. 2123 VGS = 20 V, TC = 90 C, TVJ 150 CISDDC Continuous Source-Drain Current 57 VGS = 20 V, TC = 25 C, TVJ 150 CIFS chottky Diode DC Forward Current 49 VGS = -5 V, TC = 25 C, TVJ 150 CIDS (pulsed)Maximum Pulsed Drain-Source Current80 VGS = 20 VTVJ = 25 C;tPmax limited by TVJmaxIF (pulsed)Maximum Pulsed Diode Current98 VGS = -5 VTVJ opMaximum Virtual Junction Temperature under Switching Conditions-40150 C5544332211 DDCCBBAAV+MidG1K1G2K2G5K5 MidNTC1G6K6 NTC2G3K3 MidG4K4V-V+V-25, 2615, 16159261023, 2421, 2219, 2017371148121813, 1427, 28-t -t Copyright 2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree , the Cree logo, Wolfspeed , and the Wolfspeed logo are registered trademarks of Cree, 2, 2020-12-04 CCS020M12CM2 4600 Silicon Dr.

3 , Durham, NC 27703 MOSFET Characteristics (Per Position) (TVJ = 25 C unless otherwise specified) ConditionsNoteV(BR)DSSD rain-Source Breakdown Voltage1200 VVGS = 0 V, TVJ = -40 CVGS(th)Gate Threshold = VGS, ID = 1 mAIDSSZero Gate voltage Drain Current40300 AVGS = 0 V, VDS = 1200 V IGSSGate-Source Leakage = 20 V, VDS = 0 VRDS(on)Drain-Source On-State Resistance (Devices Only)8098m VGS = 20 V, ID = 20 AFig. 2 Fig. 3145 VGS = 20 V, ID = 20 A, TVJ = 150 CgfsTransconductance10 SVDS = 20 V, IDS = 20 AFig. 49 VDS = 20 V, IDS = 20 A, TVJ = 150 CEOnTurn-On Switching Energy, TVJ = 25 CTVJ = 125 CTVJ = 150 C685857 JVDS = 600 V, ID = 20 A,VGS = -5 V/+20 V, RG(ext) = , L = 130 HFig. 11 Fig. 13 EOffTurn-Off Switching Energy, TVJ = 25 CTVJ = 125 CTVJ = 150 C458184RG(int)Internal Gate VAC = 25 mV, f = 100 kHzCissInput = 0 V, VDS = 800 V, VAC = 25 mV, f = 1 MHzFig. 9 CossOutput Transfer to Source Charge17nCVDS = 800 V, VGS = -5 V/+20 VID = 20 APer IEC60747-8-4 pg 21 QGDGate to Drain Charge29 QGTotal Gate Charge71 Rth JCFET Thermal Resistance, Junction to C/WFig.

4 17 Copyright 2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree , the Cree logo, Wolfspeed , and the Wolfspeed logo are registered trademarks of Cree, 2, 2020-12-04 CCS020M12CM2 4600 Silicon Dr., Durham, NC 27703 Module Physical ConditionsLStrayStray Inductance30nHBetween Terminals 1 and 3 TCCase Temperature-40125 CWWeight180gMSMounting to heatsinkVisolCase Isolation Voltage5kVAC, 50 Hz, 1 minClearance to to to Mounting to Isolated NTC PinCreepage to to to Mounting to Isolated NTC PinDiode Characteristics (Per Position) (TVJ = 25 C unless otherwise specified) ConditionsNoteVFDiode Forward = -5 V, IF = 20 A, TVJ = 25 CFig. = -5 V, IF = 20 A, TVJ = 150 CtrrReverse Recovery Time13nsVGS = -5 V, ISD = 20 A, VR = 600 VdiF/dt = 10 A/ns, TVJ = 150 CFig. 32 Note 1 QRRR everse Recovery Charge370nCIRRMPeak Reverse Recovery Current-42 AErrDiode Energy TVJ = 25 CTVJ = 125 CTVJ = 150 C195192191 JVDS = 600 V, ID = 20 A,VGS = -5 V/+20 V, RG(ext) = , L = 130 HFig.

5 14 Note 1 Rth JCDiode Thermal Resistance, Junction to C/WFig. 18 Note 1 SiC Schottky diodes do not have reverse recovery energy but still contribute capacitive energyNTC ConditionsR25 Rated Resistance5 k TNTC = 25 C R/RTolerance 5%TNTC = 100 C, R100 = 481 P25 Maximum Power Dissipation20mWTNTC = 25 CB25/50 NTC Beta Constant3380KR2 = R25 exp[B25/50(1/T2-1/( ))]Copyright 2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree , the Cree logo, Wolfspeed , and the Wolfspeed logo are registered trademarks of Cree, 2, 2020-12-04 CCS020M12CM2 4600 Silicon Dr., Durham, NC 27703 Figure 2. Normalized On-State Resistance vs. Drain Current for Various Junction TemperaturesTypical PerformanceFigure 5. 3rd Quadrant Characteristic vs. Junction Temperatures at VGS = 20 V Figure 1. Output Characteristics for Various Junction TemperaturesFigure 3.

6 Normalized On-State Resistance vs. Junction TemperatureFigure 4. Transfer Characteristic for Various JunctionTemperaturesFigure 6. 3rd Quadrant Characteristic vs. Junction Temperatures at VGS = 0 V (Diode)0102030405060012345678910 Drain-Source Current, IDS(A)Drain-Source voltage , VDS(V)150 C125 C-40 C100 Ctp< 300 sVGS= 20 V25 On-resistance ( ) Virtual Junction Temperature, TVJ( C)tp< 300 sVGS= 20 VID= 20 A05101520253035400246810121416 Drain-Source Current, IDS(A)Gate-Source voltage , VGS(V)-40 C25 C100 C125 C150 Ctp< 300 sVDS= 20 Current, ISD(A)Source-Drain voltage , VSD(V)150 C125 C-40 C100 Ctp< 300 sVGS= 20 V25 Current, ISD(A)Source-Drain voltage , VSD(V)-40 C100 Ctp< 300 sVGS= 0 V25 C125 C150 On-resistance ( )Drain-Source Current, IDS(A)tp< 300 sVGS= 20 V25 C100 C125 C150 C-40 CCopyright 2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice.

7 Cree , the Cree logo, Wolfspeed , and the Wolfspeed logo are registered trademarks of Cree, 2, 2020-12-04 CCS020M12CM2 4600 Silicon Dr., Durham, NC 27703 Figure 8. Typical Capacitances vs. Drain to Source voltage (0 - 200V) Typical PerformanceFigure 11. Switching Energy vs. Drain Current(VDS = 600 V)Figure 7. 3rd Quadrant Characteristic vs. Junction Temperatures at VGS = -5 V (Diode)Figure 9. Typical Capacitances vs. Drain to Source voltage (0 - 1200V)Figure 10. Threshold voltage vs. Junction TemperatureFigure 12. Switching Energy vs. Drain Current (VDS = 800 V) Current, ISD(A)Source-Drain voltage , VSD(V)-40 C100 Ctp< 300 sVGS= -5 V25 C125 C150 CEOffEOnEOff+ Energy (mJ)Source Current, IS(A)Conditions:TVJ= 25 CVDD= 600 VRG(ext)= VGS= -5/+20 VL = 130 HEOffEOnEOff+ Energy (mJ)Source Current, IS(A)Conditions:TVJ= 25 CVDD= 800 VRG(ext)= VGS=-5/+20 VL = 130 voltage , Vth(V) Virtual Junction Temperature, TVJ( C)Conditions:VGS= VDSIDS= 1 mA11010010001000002004006008001000 Capacitance (pF)Drain-Source voltage , VDS(V)CissCossCrssTJ= 25 CVAC= 25 mVf = 1 MHz110100100010000050100150200 Capacitance (pF)Drain-Source voltage , VDS(V)TJ= 25 CVAC= 25 mVf = 1 MHzCissCossCrssCopyright 2020 Cree, Inc.

8 All rights reserved. The information in this document is subject to change without notice. Cree , the Cree logo, Wolfspeed , and the Wolfspeed logo are registered trademarks of Cree, 2, 2020-12-04 CCS020M12CM2 4600 Silicon Dr., Durham, NC 27703 Figure 14. Reverse Recovery Energy vs. Junction Temperature (Note 1)Typical PerformanceFigure 17. MOSFET Junction to Case Transient Thermal Impedance, Zth JC ( C/W)Figure 13. MOSFET Switching Energy vs. Junction TemperatureFigure 15. MOSFET Switching Energy vs. External Gate ResistanceFigure 16. Reverse Recovery Energy vs. External Gate Resistance (Note 1)Figure 18. Diode Junction to Case Transient Thermal Impedance, Zth JC ( C/W)1E-310E-3100E-3 11E-610E-6100E-61E-310E-3100E-3 1 10 Junction To Case Imped., ZthJC(oC/W)Time, tp(s) 11E-610E-6100E-61E-310E-3100E-3 1 10 Junction To Case Imped., ZthJC(oC/W)Time, tp(s) + Energy (mJ)Junction Temperature, TVJ( C)Conditions:IS= 20 A,VDD= 600 VRG(ext)= ,VGS=-5/+20 VL = 130 HEOffEOnEOff+ Energy (mJ)External Gate Resistor, RG(ext)( )Conditions:TVJ= 25 CIS= 20 AVDD= 600 VVGS= -5/+20 VL = 130 HERR(VDD= 600 V)ERR(VDD= 800 V) Recovery Energy (mJ)Junction Temperature, TVJ( C)Conditions:IS= 20 ARG(ext)= VGS=-5/+20 VL = 130 HERR(VDD= 600 V) Recovery Energy (mJ)External Gate Resistor, RG(ext)( )Conditions:TVJ= 25 CIS= 20 AVDD= 600 VVGS= -5/+20 VL = 130 HCopyright 2020 Cree, Inc.

9 All rights reserved. The information in this document is subject to change without notice. Cree , the Cree logo, Wolfspeed , and the Wolfspeed logo are registered trademarks of Cree, 2, 2020-12-04 CCS020M12CM2 4600 Silicon Dr., Durham, NC 27703 Figure 20. Reverse Bias Safe Operating Area (RBSOA)Typical PerformanceFigure 19. Forward Bias Safe Operating Area (FBSOA)Figure 21. Continuous Drain Current Derating vs. Case TemperatureFigure 22. Maximum Power Dissipation Derating vs. Case Temperature0510152025303540-50-250255075 100125150 Drain-Source DC Current, IDS(DC) (A)Case Temperature, TC( C)Conditions:TVJ 150 C010203040506070809002004006008001000120 0 Drain-Source Current, IDS(A)Drain-Source voltage , VDS (V)ChipModuleConditions:TVJ= 150 C RG(ext)= LStray-Module= 30 nH020406080100120140160180200-50-2502550 75100125150 FET Power Dissipation, PD(W)Case Temperature, TC( C)Conditions:TVJ 150 Current, IDS(A)Drain-Source voltage , VDS(V)100 s1 ms10 sConditions:TC= 25 CD = 0, Parameter: tp100 msLimited by RDS On05101520253035400255075100125150175200 Output Current, IOut (Arms)Switching Frequency, FS(kHz)VDS= 800 VTC= 90 CTVJ= 150 CMF = 1RG-EXT= 2 Figure 23.

10 Typical Output Current Capability vs. Switching Frequency (Inverter Application)Copyright 2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree , the Cree logo, Wolfspeed , and the Wolfspeed logo are registered trademarks of Cree, 2, 2020-12-04 CCS020M12CM2 4600 Silicon Dr., Durham, NC 27703 Figure 25. dv/dt and di/dt vs. Source CurrentTiming CharacteristicsFigure 24. Timing vs. Source CurrentFigure 26. Timing vs. Junction TemperatureFigure 27. dv/dt and di/dt vs. Source Currenttdofftftdontr04812162024280255075 100125150175 Time (ns)Junction Temperature, TVJ( C)Conditions:IS= 20A,VDD= 600 VRG(ext)= ,VGS=-5/+20 Vdv/dtOFFdv/dtONdi/dtOFFdi/dtON010203040 50607080900255075100125150175di/dt (A/ns) and dv/dt (V/ns)Junction Temperature, TVJ( C)Conditions:IS= 20 ARG(ext)= VGS=-5/+20 Vtdofftftdontr04812162024280510152025303 54045 Time (ns)Source Current, IS(A)Conditions:TVJ= 25 CVDD= 600 VRG(ext)= VGS= -5/+20 VFigure 28.