1200 V DS CCS020M12CM2

1 Copyright 2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree , the Cree logo, Wolfspeed , and the Wolfspeed logo are registered trademarks of Cree, 2, 2020-12-04 CCS020M12CM2 4600 Silicon Dr., Durham, NC 27703 CCS020M12CM21200 V, 20 A All-Silicon Carbide Six-Pack (Three Phase) ModuleTechnical Features Ultra-Low Loss High-Frequency Operation Zero Reverse Recovery from Diodes Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device Operation Copper Baseplate and Aluminum Nitride Insulator VDS 1200 V IDS 20 ASystem Benefits Fast Time-to-Market with Minimal Development Required for Transition from 45mm IGBT Packages Increased System Efficiency.

2 Due to Low Switching & Conduction Losses of SiC Enables Compact and Lightweight SystemsApplications 3-Phase PFC Regen Drive Solar & Renewable Energy Industrial Automation & Testing Motor DrivePackage 45 mm X mm X mmMaximum Parameters (Verified by Design) ConditionsNoteVDS maxDrain-Source Voltage1200 VVGS maxGate-Source Voltage, Maximum Value-10+25 Transient, <100 nsFig. 33 VGS opGate-Source Voltage, Recommended Op. Value-5+20 StaticIDS DC Continuous Drain-Source Current34 AVGS = 20 V, TC = 25 C, TVJ 150 CFig. 2123 VGS = 20 V, TC = 90 C, TVJ 150 CISDDC Continuous Source-Drain Current 57 VGS = 20 V, TC = 25 C, TVJ 150 CIFS chottky Diode DC Forward Current 49 VGS = -5 V, TC = 25 C, TVJ 150 CIDS (pulsed)Maximum Pulsed Drain-Source Current80 VGS = 20 VTVJ = 25 C.

3 TPmax limited by TVJmaxIF (pulsed)Maximum Pulsed Diode Current98 VGS = -5 VTVJ opMaximum Virtual Junction Temperature under Switching Conditions-40150 C5544332211 DDCCBBAAV+MidG1K1G2K2G5K5 MidNTC1G6K6 NTC2G3K3 MidG4K4V-V+V-25, 2615, 16159261023, 2421, 2219, 2017371148121813, 1427, 28-t -t Copyright 2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree , the Cree logo, Wolfspeed , and the Wolfspeed logo are registered trademarks of Cree, 2, 2020-12-04 CCS020M12CM2 4600 Silicon Dr.

4 , Durham, NC 27703 MOSFET Characteristics (Per Position) (TVJ = 25 C unless otherwise specified) ConditionsNoteV(BR)DSSD rain-Source Breakdown Voltage1200 VVGS = 0 V, TVJ = -40 CVGS(th)Gate Threshold = VGS, ID = 1 mAIDSSZero Gate Voltage Drain Current40300 AVGS = 0 V, VDS = 1200 V IGSSGate-Source Leakage = 20 V, VDS = 0 VRDS(on)Drain-Source On-State Resistance (Devices Only)8098m VGS = 20 V, ID = 20 AFig. 2 Fig. 3145 VGS = 20 V, ID = 20 A, TVJ = 150 CgfsTransconductance10 SVDS = 20 V, IDS = 20 AFig. 49 VDS = 20 V, IDS = 20 A, TVJ = 150 CEOnTurn-On Switching Energy, TVJ = 25 CTVJ = 125 CTVJ = 150 C685857 JVDS = 600 V, ID = 20 A,VGS = -5 V/+20 V, RG(ext) = , L = 130 HFig.

5 11 Fig. 13 EOffTurn-Off Switching Energy, TVJ = 25 CTVJ = 125 CTVJ = 150 C458184RG(int)Internal Gate VAC = 25 mV, f = 100 kHzCissInput = 0 V, VDS = 800 V, VAC = 25 mV, f = 1 MHzFig. 9 CossOutput Transfer to Source Charge17nCVDS = 800 V, VGS = -5 V/+20 VID = 20 APer IEC60747-8-4 pg 21 QGDGate to Drain Charge29 QGTotal Gate Charge71 Rth JCFET Thermal Resistance, Junction to C/WFig. 17 Copyright 2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree , the Cree logo, Wolfspeed , and the Wolfspeed logo are registered trademarks of Cree, 2, 2020-12-04 CCS020M12CM2 4600 Silicon Dr.

6 , Durham, NC 27703 Module Physical ConditionsLStrayStray Inductance30nHBetween Terminals 1 and 3 TCCase Temperature-40125 CWWeight180gMSMounting to heatsinkVisolCase Isolation Voltage5kVAC, 50 Hz, 1 minClearance to to to Mounting to Isolated NTC PinCreepage to to to Mounting to Isolated NTC PinDiode Characteristics (Per Position) (TVJ = 25 C unless otherwise specified) ConditionsNoteVFDiode Forward = -5 V, IF = 20 A, TVJ = 25 CFig. = -5 V, IF = 20 A, TVJ = 150 CtrrReverse Recovery Time13nsVGS = -5 V, ISD = 20 A, VR = 600 VdiF/dt = 10 A/ns, TVJ = 150 CFig.

7 32 Note 1 QRRR everse Recovery Charge370nCIRRMPeak Reverse Recovery Current-42 AErrDiode Energy TVJ = 25 CTVJ = 125 CTVJ = 150 C195192191 JVDS = 600 V, ID = 20 A,VGS = -5 V/+20 V, RG(ext) = , L = 130 HFig. 14 Note 1 Rth JCDiode Thermal Resistance, Junction to C/WFig. 18 Note 1 SiC Schottky diodes do not have reverse recovery energy but still contribute capacitive energyNTC ConditionsR25 Rated Resistance5 k TNTC = 25 C R/RTolerance 5%TNTC = 100 C, R100 = 481 P25 Maximum power Dissipation20mWTNTC = 25 CB25/50 NTC Beta Constant3380KR2 = R25 exp[B25/50(1/T2-1/( ))]Copyright 2020 Cree, Inc.

8 All rights reserved. The information in this document is subject to change without notice. Cree , the Cree logo, Wolfspeed , and the Wolfspeed logo are registered trademarks of Cree, 2, 2020-12-04 CCS020M12CM2 4600 Silicon Dr., Durham, NC 27703 Figure 2. Normalized On-State Resistance vs. Drain Current for Various Junction TemperaturesTypical PerformanceFigure 5. 3rd Quadrant Characteristic vs. Junction Temperatures at VGS = 20 V Figure 1. Output Characteristics for Various Junction TemperaturesFigure 3. Normalized On-State Resistance vs.

9 Junction TemperatureFigure 4. Transfer Characteristic for Various JunctionTemperaturesFigure 6. 3rd Quadrant Characteristic vs. Junction Temperatures at VGS = 0 V (Diode)0102030405060012345678910 Drain-Source Current, IDS(A)Drain-Source Voltage, VDS(V)150 C125 C-40 C100 Ctp< 300 sVGS= 20 V25 On-resistance ( ) Virtual Junction Temperature, TVJ( C)tp< 300 sVGS= 20 VID= 20 A05101520253035400246810121416 Drain-Source Current, IDS(A)Gate-Source Voltage, VGS(V)-40 C25 C100 C125 C150 Ctp< 300 sVDS= 20 Current, ISD(A)Source-Drain Voltage, VSD(V)150 C125 C-40 C100 Ctp< 300 sVGS= 20 V25 Current, ISD(A)Source-Drain Voltage, VSD(V)

10 -40 C100 Ctp< 300 sVGS= 0 V25 C125 C150 On-resistance ( )Drain-Source Current, IDS(A)tp< 300 sVGS= 20 V25 C100 C125 C150 C-40 CCopyright 2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree , the Cree logo, Wolfspeed , and the Wolfspeed logo are registered trademarks of Cree, 2, 2020-12-04 CCS020M12CM2 4600 Silicon Dr., Durham, NC 27703 Figure 8. Typical Capacitances vs. Drain to Source Voltage(0 - 200V) Typical PerformanceFigure 11. Switching Energy vs.