30V P-Channel MOSFET

1 AON740530V P-Channel MOSFETG eneral DescriptionProduct SummaryVDS ID (at VGS= -10V)-50A RDS(ON) (at VGS= -10V)< RDS(ON) (at VGS = -6V)< 100% UIS Tested100% Rg TestedSymbolVDS-30 VThe AON7405 uses advanced trench technology toprovide excellent RDS(ON) with low gate device is ideal for load switch and battery protectionapplications. RoHS and Halogen-Free CompliantVMaximumUnitsParameterAbsolute Maximum Ratings TA=25 C unless otherwise notedDrain-Source Voltage-30 DFN EPTop View Bottom Pin 1 Top View12348765 GDSVDSVGSIDMIAR, IASEAR, EASTJ.

2 TSTGS ymbolt 10sSteady-StateSteady-StateR JCThermal CharacteristicsMaximum Junction-to-Case C/W C/WMaximum Junction-to-Ambient A Dissipation BWPower Dissipation APDSMWTA=70 C834TA=25 CATA=70 C-25ID-50-39TC=25 CTC=100 CA-44AV 25 Gate-Source VoltageContinuous DrainCurrentGTA=25 CIDSMVD rain-Source Voltage-30 Maximum Junction-to-Ambient A C/WR JA164520 C-210 Pulsed Drain Current CUnitsRepetitive avalanche energy L= CmJAvalanche Current C-20 Continuous DrainCurrent97 ParameterTypMaxTC=25 CJunction and Storage Temperature Range-55 to 150PD 0.

3 May 1 of 6 AON7405 SymbolMinTypMaxUnitsBVDSS-30 VVDS=-30V, VGS=0V-1TJ=55 C-5 IGSS 100nAVGS(th)Gate Threshold (ON) , ID= Qg(10V)334251nCQg( ) Breakdown VoltageOn state drain currentID=-250 A, VGS=0 VVGS=-10V, VDS=-5 VVGS=-10V, ID=-20 AReverse Transfer CapacitanceVGS=0V, VDS=-15V, f=1 MHzSWITCHING PARAMETERSE lectrical Characteristics (TJ=25 C unless otherwise noted)STATIC PARAMETERSP arameterConditionsIDSS AVDS=VGS ID=-250 AVDS=0V, VGS= 25 VZero Gate Voltage Drain CurrentGate-Body leakage currentForward TransconductanceDiode Forward VoltageRDS(ON)

4 Static Drain-Source On-Resistancem IS=-1A,VGS=0 VVDS=-5V, ID=-20 AVGS= , ID=-10 AGate resistanceVGS=0V, VDS=0V, f=1 MHzTotal Gate ChargeVGS=-10V, VDS=-15V, ID=-20 AGate Source ChargeGate Drain ChargeTotal Gate ChargeMaximum Body-Diode Continuous CurrentGInput CapacitanceOutput CapacitanceTurn-On DelayTimeDYNAMIC PARAMETERStD(on) (off)104nstf78nstrr202530nsQrr374757nCTH IS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED.

5 AOS DOES NOT ASSUME ANY LIABILITY ARISINGOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT Diode Reverse Recovery TimeIF=-20A, dI/dt=500A/ sTurn-Off Fall TimeBody Diode Reverse Recovery ChargeIF=-20A, dI/dt=500A/ sTurn-On DelayTimeTurn-On Rise TimeTurn-Off DelayTimeVGS=-10V, VDS=-15V,RL= , RGEN=3 A. The value of R JAis measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25 C.

6 The Power dissipation PDSMis based on R JA t 10s value and the maximum allowed junction temperature of 150 C. The value in any given application depends on the user's specific board The power dissipation PDis based on TJ(MAX)=150 C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150 C. Ratings are based on low frequency and duty cycles to keep initial TJ =25 The R JAis the sum of the thermal impedence from junction to case R JCand case to The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150 C.

7 The SOA curve provides a single pulse rating. G. The maximum current rating is limited by package. H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25 C. : May 2 of 6 AON7405 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS1752100180204060801001201 23456-ID(A)-VGS(Volts)Figure 2: Transfer Characteristics (Note E)3456789051015202530 RDS(ON)(m )-ID(A)Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) On-ResistanceTemperature ( C)Figure 4: On-Resistance vs.

8 Junction Temperature (Note E)VGS=-6 VID=-20 AVGS=-10 VID=-20A25 C125 CVDS=-5 VVGS=-6 VVGS=-10V020406080100120012345-ID(A)-VDS (Volts)Fig 1: On-Region Characteristics (Note E)VGS= ,-8V, + + + (A)-VSD(Volts)Figure 6: Body-Diode Characteristics (Note E)25 125 C(Note E)159131721345678910 RDS(ON)(m )-VGS(Volts)Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)ID=-20A25 125 : May 3 of 6 AON7405 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS1752100180246810010203040 50-VGS(Volts)Qg(nC)Figure 7: Gate-Charge Characteristics0500100015002000250030003 5004000051015202530 Capacitance (pF)-VDS(Volts)Figure 8: Capacitance (W)Pulse Width (s)Figure 10: Single Pulse Power Rating Junction-to-CossCrssVDS=-15 VID=-20 ATJ(Max)=150 CTC=25 C10 (Amps)-VDS(Volts)Figure 9.

9 Maximum Forward Biased Safe 10 sDCRDS(ON) TJ(Max)=150 CTC=25 C100 s1ms40 Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) JCNormalized Transient Thermal ResistancePulse Width (s)Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)Single PulseD=Ton/TTJ,PK=TC+ JCTonTPDIn descending orderD= , , , , , , single pulseFigure 9: Maximum Forward Biased Safe Operating Area (Note F)R JC= C/W : May 4 of 6 AON7405 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS1752100181010010001101001 000-IAR (A) Peak Avalanche Current Time in avalanche, tA( s)Figure 12: Single Pulse Avalanche capability (Note C)01020304050607080900255075100125150 Power Dissipation (W)TCASE( C)Figure 13: Power De-rating (Note F)01020304050600255075100125150-Current rating ID(A)TCASE( C)Figure 14: Current De-rating (Note F)TA=25 (W)Pulse Width (s)Figure 15.

10 Single Pulse Power Rating Junction-to-TA=25 CTA=150 CTA=100 CTA=125 JANormalized Transient Thermal ResistancePulse Width (s)Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)Single PulseD=Ton/TTJ,PK=TA+ JATonTPDIn descending orderD= , , , , , , single pulseFigure 14: Current De-rating (Note F)Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note H)R JA=55 C/W : May 5 of 6 AON7405 VDCIgVdsDUTVDCVgsVgsQgQgsQgdChargeGate Charge Test Circuit & Waveform-+-+-10 VIdVdsUnclamped Inductive Switching (UIS) Test Circuit & WaveformsVdsL2E = 1/2 LIARARBVVDCDUTVddVgsVdsVgsRLRgResistive Switching Test Circuit & Waveforms-+VgsVdstttttt90%10%rond(off)fo ffd(on)VddVgsVgsRgDUTVDCVgsIdVgs-+BVDSSI ARIgVgs-+VDCDUTLVgsIsdDiode Recovery Test Circuit & W aveformsVds -Vds +dI/dtRMrrVddVddQ = - Idttrr-Isd-VdsF-I-I : May 6 of 6