80V N-Channel MOSFET

1 AOD281080V N-Channel MOSFETG eneral DescriptionProduct SummaryVDS ID (at VGS=10V)46A RDS(ON) (at VGS=10V)< RDS(ON) (at VGS=6V)< 12m 100% UIS Tested100% Rg TestedSymbolVDS80 VThe AOD2810 uses trench MOSFET technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of RDS(ON), Ciss and Coss. This device isideal for boost converters and synchronous rectifiers forconsumer, telecom, industrial power supplies and Maximum Ratings TA=25 C unless otherwise notedDrain-Source Voltage80GD STO252 DPAKTop ViewBottom ViewG S D G S D VGSIDMIASEASTJ.

2 TSTGS ymbolt 10sSteady-StateSteady-StateR JCPDM aximum Junction-to-Case C/W C/WMaximum Junction-to-Ambient A and Storage Temperature Range-55 to 175 CThermal CharacteristicsParameterTypMax160 Pulsed Drain Current CContinuous DrainCurrent GWPower Dissipation APDSMWTA=70 CTC=25 CPower Dissipation BID4636TC=25 CTC=100 CmJAvalanche Current energy L= CATA=25 CIDSMATA=70 CV 20 Gate-Source VoltageMaximum Junction-to-Ambient A C/WR JA164120 Rev 0: Dec. 1 of 6 AOD2810 SymbolMinTypMaxUnitsBVDSS80 VVDS=80V, VGS=0V1TJ=55 C5 IGSS 100nAVGS(th)Gate Threshold (ON) Qg(10V) (on) state drain currentID=250 A, VGS=0 VVGS=10V, VDS=5 VVGS=10V, ID=20 AGate-Body leakage currentReverse Transfer CapacitanceVGS=0V, VDS=40V, f=1 MHzVDS=VGS ID=250 AVDS=0V, VGS= 20 VMaximum Body-Diode Continuous Current GInput CapacitanceOutput CapacitanceForward TransconductanceIS=1A,VGS=0 VVDS=5V, ID=20 ADYNAMIC PARAMETERSVGS=6V, ID=20 ARDS(ON)Static Drain-Source On-ResistanceDiode Forward Voltagem Electrical Characteristics (TJ=25 C unless otherwise noted)

3 STATIC PARAMETERSP arameterConditionsIDSS AZero Gate Voltage Drain CurrentDrain-Source Breakdown VoltageTurn-On Rise TimeTurn-Off DelayTimeVGS=10V, VDS=40V, RL=2 ,R=3 Gate resistanceVGS=0V, VDS=0V, f=1 MHzTotal Gate ChargeGate Source ChargeGate Drain ChargeSWITCHING PARAMETERSTurn-On DelayTimeVGS=10V, VDS=40V, ID=20 AtD(off) PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINGOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT , dI/dt=500A/ sBody Diode Reverse Recovery ChargeBody Diode Reverse Recovery TimeIF=20A, dI/dt=500A/ sTurn-Off DelayTimeRGEN=3 Turn-Off Fall TimeA.

4 The value of R JAis measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25 C. The Power dissipation PDSMis based on R JAand the maximum allowed junction temperature of 150 C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175 C may be used if the PCB allows The power dissipation PDis based on TJ(MAX)=175 C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175 C. Ratings are based on low frequency and duty cycles to keep initial TJ =25 The R JAis the sum of the thermal impedance from junction to case R JCand case to The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175 C.

5 The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25 C. Rev 0:Dec. 2 of 6 AOD2810 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS1752100180204060801001234 56ID(A)VGS(Volts)Figure 2: Transfer Characteristics (Note E)03691215051015202530 RDS(ON)(m )ID(A)Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) On-ResistanceTemperature ( C)Figure 4: On-Resistance vs. Junction Temperature (Note E)VGS=6 VID=20 AVGS=10 VID=20A25 C125 CVDS=5 VVGS=6 VVGS=10V020406080100012345ID(A)VDS(Volts )Fig 1: On-Region Characteristics (Note E)VGS= + + + (A)VSD(Volts)Figure 6: Body-Diode Characteristics (Note E)25 C125 C(Note E)05101520250246810 RDS(ON)(m )VGS(Volts)Figure 5: On-Resistance vs.

6 Gate-Source Voltage (Note E)ID=20A25 C125 C Rev 0:Dec. 3 of 6 AOD2810 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS1752100180246810051015202 530 VGS(Volts)Qg(nC)Figure 7: Gate-Charge Characteristics0500100015002000250001020 304050607080 Capacitance (pF)VDS(Volts)Figure 8: Capacitance (W)Pulse Width (s)Figure 10: Single Pulse Power Rating Junction-to-CossCrssVDS=40 VID=20 ATJ(Max)=175 CTC=25 C10 (Amps)VDS(Volts)Figure 9: Maximum Forward Biased Safe 10 s10ms1msDCRDS(ON) TJ(Max)=175 CTC=25 C100 s40 Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) JCNormalized Transient Thermal ResistancePulse Width (s)Figure 11.

7 Normalized Maximum Transient Thermal Impedance (Note F)Single PulseD=Ton/TTJ,PK=TC+ JCTonTPDIn descending orderD= , , , , , , single pulseFigure 9: Maximum Forward Biased Safe Operating Area (Note F)R JC= C/W Rev 0:Dec. 4 of 6 AOD2810 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS1752100180204060801001200 255075100125150175 Power Dissipation (W)TCASE( C)Figure 13: Power De-rating (Note F)010203040500255075100125150175 Current rating ID(A)TCASE( C)Figure 14: Current De-rating (Note F) (W)Pulse Width (s)Figure 15: Single Pulse Power Rating Junction-to-TA=25 C11010010001101001000 IAR (A) Peak Avalanche Current Time in avalanche, tA( s)Figure 12: Single Pulse Avalanche capability (Note C)TA=25 CTA=150 CTA=100 CTA=125 JANormalized Transient Thermal ResistancePulse Width (s)Figure 16.

8 Normalized Maximum Transient Thermal Impedance (Note H)Single PulseD=Ton/TTJ,PK=TA+ JATonTPDIn descending orderD= , , , , , , single pulseFigure 14: Current De-rating (Note F)Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note H)R JA=50 C/W Rev 0:Dec. 5 of 6 AOD2810 -+VDCIgVdsDUT-+VDCVgsVgs10 VQgQgsQgdChargeGate Charge Test Circuit & Waveform-+VDCDUTVddVgsVdsVgsRLRgVgsVds10 %90%Resistive Switching Test Circuit & Waveformsttrd(on)tontd(off)tftoffId+LVds BVUnclamped Inductive Switching (UIS) Test Circuit & WaveformsVdsDSS2E = 1/2 LIARARVddVgsVgsRgDUT-+VDCVgsIdVgsIIgVgs- +VDCDUTLVgsVdsIsdIsdDiode Recovery Test Circuit & WaveformsVds -Vds +IFARdI/dtIRMrrVddVddQ = - Idttrr Rev 0:Dec.

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