80V N-Channel MOSFET

1 AON628480V N-Channel MOSFETG eneral DescriptionProduct SummaryVDS ID (at VGS=10V)78A RDS(ON) (at VGS=10V)< RDS(ON) (at VGS=6V)< 10m 100% UIS Tested100% Rg TestedSymbolThe AON6284 uses trench MOSFET technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to anextremely low combination of RDS(ON), Ciss and device is ideal for boost converters and synchronousrectifiers for consumer, telecom, industrial power suppliesand LED Maximum Ratings TA=25 C unless otherwise noted80 VGDSTop View12348765 PIN1 DFN5X6 Top ViewBottom ViewSymbolVDSVGSIDMIASEASTJ, TSTGS ymbolt 10sSteady-StateSteady-StateR JCMaximum Junction-to-Ambient A C/WR JA144017V 20 Gate-Source VoltageDrain-Source Voltage80 UnitsJunction and Storage Temperature Range-55 to 150 CThermal CharacteristicsParameterTypMaxVMaximumUn itsParametermJAvalanche Current C19 Continuous DrainCurrent8024A40 Avalanche energy L= CATA=25 CIDSMATA=70 CID7849TC=25 CTC=100 C170 Pulsed Drain Current CContinuous DrainCurrentWPower Dissipation APDSMWTA=70 CTC=25 CPower Dissipation BPDM aximum Junction-to-Case C/W C/WMaximum Junction-to-Ambient A.

2 April 2013 1 of 6 AON6284 SymbolMinTypMaxUnitsBVDSS80 VVDS=80V, VGS=0V1TJ=55 C5 IGSS 100nAVGS(th)Gate Threshold (ON) Qg(10V) (on) Rise TimeTurn-Off DelayTimeVGS=10V, VDS=40V, RL=2 ,R=3 Gate resistanceVGS=0V, VDS=0V, f=1 MHzTotal Gate ChargeGate Source ChargeGate Drain ChargeSWITCHING PARAMETERSTurn-On DelayTimeVGS=10V, VDS=40V, ID=20 AElectrical Characteristics (TJ=25 C unless otherwise noted)STATIC PARAMETERSP arameterConditionsIDSS AZero Gate Voltage Drain CurrentDrain-Source Breakdown VoltageReverse Transfer CapacitanceVGS=0V, VDS=40V, f=1 MHzVDS=VGS, ID=250 AVDS=0V, VGS= 20 VMaximum Body-Diode Continuous CurrentInput CapacitanceOutput CapacitanceForward TransconductanceIS=1A,VGS=0 VVDS=5V, ID=20 ADYNAMIC PARAMETERSVGS=6V, ID=20 ARDS(ON)Static Drain-Source On-ResistanceDiode Forward Voltagem On state drain currentID=250 A, VGS=0 VVGS=10V, VDS=5 VVGS=10V, ID=20 AGate-Body leakage currenttD(off)23nstf5nstrr26nsQrr118nCTH IS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET.

3 APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISINGOUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT DelayTimeRGEN=3 Turn-Off Fall TimeIF=20A, dI/dt=500A/ sBody Diode Reverse Recovery ChargeBody Diode Reverse Recovery TimeIF=20A, dI/dt=500A/ sA. The value of R JAis measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25 C. The Power dissipation PDSMis based on R JAt 10s and the maximum allowed junction temperature of 150 C. The value in any given application depends on the user's specific board The power dissipation PDis based on TJ(MAX)=150 C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150 C.

4 Ratings are based on low frequency and duty cycles to keep initial TJ =25 The R JAis the sum of the thermal impedance from junction to case R JCand case to The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150 C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25 C. : April 2 of 6 AON6284 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS1752100180204060801001234 56ID(A)VGS(Volts)Figure 2: Transfer Characteristics (Note E)036912051015202530 RDS(ON)(m )ID(A)Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) On-ResistanceTemperature ( C)Figure 4: On-Resistance vs.

5 Junction Temperature (Note E)VGS=6 VID=20 AVGS=10 VID=20A25 C125 CVDS=5 VVGS=6 VVGS=10V020406080100012345ID(A)VDS(Volts )Fig 1: On-Region Characteristics (Note E)VGS= + + + (A)VSD(Volts)Figure 6: Body-Diode Characteristics (Note E)25 C125 C(Note E)0369121518246810 RDS(ON)(m )VGS(Volts)Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)ID=20A25 C125 C : April 3 of 6 AON6284 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS1752100180246810051015202 530 VGS(Volts)Qg(nC)Figure 7: Gate-Charge Characteristics0500100015002000250001020 304050607080 Capacitance (pF)VDS(Volts)Figure 8: Capacitance (W)Pulse Width (s)Figure 10: Single Pulse Power Rating Junction-to-Case CossCrssVDS=40 VID=20 ATJ(Max)=150 CTC=25 C10 (Amps)VDS(Volts)VGS> or equal to 6 VFigure 9: Maximum Forward Biased 10 s10ms1msDCRDS(ON) limitedTJ(Max)=150 CTC=25 C100 s40 Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) JCNormalized Transient Thermal ResistancePulse Width (s)Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)Single PulseD=Ton/TTJ,PK=TC+ JCTonTPDIn descending orderD= , , , , , , single pulseFigure 9: Maximum Forward Biased Safe Operating Area (Note F)R JC= C/W.

6 April 4 of 6 AON6284 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS1752100180204060801000255 075100125150 Power Dissipation (W)TCASE( C)Figure 13: Power De-rating (Note F)0204060801000255075100125150 Current rating ID(A)TCASE( C)Figure 14: Current De-rating (Note F) (W)Pulse Width (s)Figure 15: Single Pulse Power Rating Junction-to-TA=25 C11010010001101001000 IAR (A) Peak Avalanche Current Time in avalanche, tA( s)Figure 12: Single Pulse Avalanche capability (Note C)TA=25 CTA=150 CTA=100 CTA=125 JANormalized Transient Thermal ResistancePulse Width (s)Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)Single PulseD=Ton/TTJ,PK=TA+ JATonTPDIn descending orderD= , , , , , , single pulseFigure 14: Current De-rating (Note F)Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note H)R JA=55 C/W : April 5 of 6 AON6284 -+VDCIgVdsDUT-+VDCVgsVgs10 VQgQgsQgdChargeGate Charge Test Circuit & Waveform-+VDCDUTVddVgsVdsVgsRLRgVgsVds10 %90%Resistive Switching Test Circuit & Waveformsttrd(on)tontd(off)tftoffId+LVds BVUnclamped Inductive Switching (UIS) Test Circuit & WaveformsVdsDSS2E = 1/2 LIARARVddVgsVgsRgDUT-+VDCVgsIdVgsIIgVgs- +VDCDUTLVgsVdsIsdIsdDiode Recovery Test Circuit & WaveformsVds -Vds +IFARdI/dtIRMrrVddVddQ = - Idttrr : April 6 of 6