Transcription of Datasheet - LIS2DW12 - MEMS digital output motion sensor ...
1 Features Ultra-low power consumption: 50 nA in power-down mode, below 1 A in activelow-power mode Very low noise: down to mg RMS in low-power mode Multiple operating modes with multiple bandwidths Android stationary detection, motion detection Supply voltage, V to V Independent IO supply 2g/ 4g/ 8g/ 16g full scale High-speed I C/SPI digital output interface Single data conversion on demand 16-bit data output Embedded temperature sensor Self-test 32-level FIFO 10000 g high shock survivability ECOPACK.
2 RoHS and Green compliantApplications motion detection for wearables Gesture recognition and gaming motion -activated functions and user interfaces Display orientation Tap/double-tap recognition Free-fall detection Smart power saving for handheld devices Hearing aids Portable healthcare devices Wireless sensor nodes motion -enabled metering devicesDescriptionThe LIS2DW12 is an ultra-low-power high-performance three-axis linearaccelerometer belonging to the femto family which leverages on the robust andmature manufacturing processes already used for the production of LIS2DW12 has user-selectable full scales of 2g/ 4g/ 8g/ 16g and is capable ofmeasuring accelerations with output data rates from Hz to 1600 LIS2DW12 has an integrated 32-level first-in, first-out (FIFO)
3 Buffer allowing theuser to store data in order to limit intervention by the host embedded self-test capability allows the user to check the functioning of thesensor in the final status linkLIS2DW12 Product summaryOrder codeLIS2DW12 LIS2DW12 TRTemperaturerange [ C]-40 to +85 PackageLGA-12 PackingTrayTape and reelProduct labelMEMS digital output motion sensor : high-performance ultra-low-power 3-axis "femto" accelerometerLIS2DW12 DatasheetDS11811 - Rev 6 - November 2018 For further information contact your local STMicroelectronics sales LIS2DW12 has a dedicated internal engine to process motion and accelerationdetection including free-fall, wakeup, highly configurable single/double-taprecognition, activity/inactivity, stationary/ motion detection, portrait/landscapedetection and 6D/4D LIS2DW12 is available in a small thin plastic land grid array package (LGA)
4 Andit is guaranteed to operate over an extended temperature range from -40 C to+85 - Rev 6page 2/651 Block diagram and pin diagramFigure 1. Block diagramCHARGEAMPLIFIERY+Z+Y-Z-aX+X-I CSPICSSCL/SPCSDA/SDO/SDISDO/SA0 CONTROL LOGIC&INTERRUPT CLOCKTRIMMINGCIRCUITSREFERENCECONTROL A/D CONVERTERINT2 MUXLOGICSELF TEST 32 LevelFIFO TEMPERATURE SENSOR2 LIS2DW12 Block diagram and pin description DS11811 - Rev 6page 3 descriptionFigure 2. Pin connections198723465111210 GNDRESSCL/SPCCSSDO/SA0 SDA/SDI/SDONCINT2 INT1(TOPVIEW)DIRECTION OF THEDETECTABLEACCELERATIONSY1 XZVDD(BOTTOM VIEW)GNDVDDIOT able 1.
5 Pin descriptionPin#NameFunction1 SCLSPCI C serial clock (SCL)SPI serial port clock (SPC)2(1)CSSPI enableI C/SPI mode selection(1: SPI idle mode / I C communication enabled;0: SPI communication mode / I C disabled)3(1)SDOSA0 SPI serial data output (SDO)I C less significant bit of the device address (SA0)4 SDASDISDOI C serial data (SDA)SPI serial data input (SDI)3-wire interface serial data output (SDO)5 NCInternally not connected. Can be tied to VDD, VDDIO, or V supply7 RESC onnect to GND8 GND0 V supply9 VDDP ower supply10 VDD_IOPower supply for I/O pins11 INT2 Interrupt pin 2.
6 Clock input when selected in single data conversion on pin 1 1. SDO/SA0 and CS pins are internally pulled up. Refer to Table 2. Internal pull-up values (typ.) for SDO/SA0 and CS pins forthe internal pull-up values (typ). LIS2DW12 Pin description DS11811 - Rev 6page 4/65 Table 2. Internal pull-up values (typ.) for SDO/SA0 and CS pinsVdd_IOResistor value for SDO/SA0 and CS pinsTyp. (k ) description DS11811 - Rev 6page 5/652 Mechanical and electrical characteristics@ Vdd = V, T = 25 C unless otherwise noted. The product is factory calibrated at V.
7 The operationalpower supply range is from V to 3. Mechanical characteristicsSymbolParameterTest (1) range 2g 4 8 16 SoSensitivity@ FS 2 g in High-Performance Mode and all low-powermodes except Low-Power Mode @ FS 4 g in High-Performance Mode and all low-powermodes except Low-Power Mode @ FS 8 g in High-Performance Mode and all low-powermodes except Low-Power Mode @ FS 16 g in High-Performance Mode and all low-power modes except Low-Power Mode @ FS 2 g in Low-Power Mode @ FS 4 g in Low-Power Mode @ FS 8 g in Low-Power Mode @ FS 16 g in Low-Power Mode density - High-performanceMode(2)
8 @ FS 2 g90 g/ HzRMSRMS noise - Low-Power Modes(3)@ FS 2 gLow-Power Mode (RMS)Low-Power Mode Mode Mode level offset accuracy(4) 20mgTCOZero-g offset change vs. temperature CTCSS ensitivity change vs. CSTSelf-test positive difference701500mg 1. Typical specifications are not Noise density is the same for all ODRs. Low-noise setting RMS noise is the same for all ODRs. Low-noise setting Values after factory calibration test and trimming. LIS2DW12 Mechanical and electrical specifications DS11811 - Rev 6page 6 characteristics@ Vdd = V, T = 25 C unless otherwise noted.
9 The product is factory calibrated at V. The operationalpower supply range is from V to 4. Electrical characteristicsSymbolParameterTest (1) pins supply voltage(2) + consumption in High-Performance Mode(3)@ ODR Hz - 1600 Hz, 14-bit90 AIddLPCurrent consumption in Low-Power Mode(4)ODR 100 Hz5 AODR 50 Hz3 ODR Hz1 ODR consumption in power-down50nAVIHD igital high-level input *Vdd_IOVVILD igital low-level input *Vdd_IOVVOHD igital high-level output voltageIOH = 4 mA(5)VDD_IO - VVVOLD igital low-level output voltageIOL = 4 mA(5) VV 1.
10 Typical specifications are not It is possible to remove Vdd maintaining Vdd_IO without blocking the communication busses. In thiscondition the measurement chain is powered Low-noise setting Low-Power Mode 1. Low-noise setting 4 mA is the maximum driving capability, ie. the maximum DC current that can be sourced/sunk by the digitalpad in order to guarantee the correct digital output voltage levels VOH and VOL. LIS2DW12 Electrical characteristics DS11811 - Rev 6page 7 sensor characteristics@ Vdd = V, T = 25 C unless otherwise notedTable 5.