DUAL N-CHANNEL AND DUAL P-CHANNEL MATCHED …

1 ADVANCED. LINEAR. DEVICES, INC. ALD1105. dual N-CHANNEL AND dual P-CHANNEL MATCHED MOSFET PAIR. GENERAL DESCRIPTION APPLICATIONS. The ALD1105 is a monolithic dual N-CHANNEL and dual P-CHANNEL Precision current mirrors complementary MATCHED transistor pair intended for a broad range of Complementary push-pull linear drives analog applications. These enhancement-mode transistors are Analog switches manufactured with Advanced Linear Devices' enhanced ACMOS silicon Choppers gate CMOS process. It consists of an ALD1116 N-CHANNEL MOSFET pair Differential amplifier input stage and an ALD1117 P-CHANNEL MOSFET pair in one package. The ALD1105 Voltage comparator is a low drain current, low leakage current version of the ALD1103.

2 Data converters Sample and Hold The ALD1105 offers high input impedance and negative current temperature Analog inverter coefficient. The transistor pair is MATCHED for minimum offset voltage and Precision MATCHED current sources differential thermal response, and it is designed for precision signal switching and amplifying applications in +2V to +12V systems where low input bias current, low input capacitance and fast switching speed are PIN CONFIGURATION. desired. Since these are MOSFET devices, they feature very large (almost infinite) current gain in a low frequency, or near DC, operating environment. DN1 1 14 DN2. When used in complementary pairs, a dual CMOS analog switch can be constructed.

3 In addition, the ALD1105 is intended as a building block for GN1 2 13 GN2. differential amplifier input stages, transmission gates, and multiplexer applications. SN1 3 12 SN2. V- 4 11 V+. The ALD1105 is suitable for use in precision applications which require very high current gain, beta, such as current mirrors and current sources. DP1 5 10 DP2. The high input impedance and the high DC current gain of the Field Effect Transistors result in extremely low current loss through the control gate. GP1 6 9 GP2. The DC current gain is limited by the gate input leakage current, which is specified at 30pA at room temperature. For example, DC beta of the device SP1 7 8 SP2.

4 At a drain current of 3mA at 25 C is = 3mA/30pA = 100,000,000. TOP VIEW. SBL, PBL, DB PACKAGES. FEATURES. Thermal tracking between N-CHANNEL and P-CHANNEL pairs BLOCK DIAGRAM. Low threshold voltage of for both N-CHANNEL &. P-CHANNEL MOSFETS N GATE 1 (2). Low input capacitance Low Vos -- 10mV. High input impedance -- 1013 typical N DRAIN 1 (1) N SOURCE 1 (3). Low input and output leakage currents SUBSTRATE (4). Negative current (IDS) temperature coefficient Enhancement mode (normally off) N DRAIN 2 (14) N SOURCE 2 (12). DC current gain 109. MATCHED N-CHANNEL and MATCHED P-CHANNEL in one package RoHS compliant N GATE 2 (13). ORDERING INFORMATION ( L suffix denotes lead-free (RoHS)) P GATE 1 (6).

5 Operating Temperature Range*. 0 C to +70 C 0 C to +70 C -55 C to +125 C. P DRAIN 1 (5) P SOURCE 1 (7). 14-Pin 14-Pin 14-Pin SUBSTRATE (11). Small Outline Plastic Dip CERDIP. Package (SOIC) Package Package P DRAIN 2 (10) P SOURCE 2 (8). ALD1105 SBL ALD1105 PBL ALD1105DB. * Contact factory for leaded (non-RoHS) or high temperature versions. P GATE 2 (9). Rev 2012 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286. ABSOLUTE MAXIMUM RATINGS. Drain-source voltage, VDS Gate-source voltage, VGS Power dissipation 500mW. Operating temperature range SBL, PBL packages 0 C to +70 C.

6 DB package -55 C to +125 C. Storage temperature range -65 C to +150 C. Lead temperature, 10 seconds +260 C. CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment. OPERATING ELECTRICAL CHARACTERISTICS. TA = 25 C unless otherwise specified N - channel Test P - channel Test Parameter Symbol Min Typ Max Unit Conditions Min Typ Max Unit Conditions Gate Threshold VT V IDS = 1 A VGS = VDS V IDS = -1 A VGS = VDS. Voltage Offset Voltage VOS 2 10 mV IDS = 10 A VGS = VDS 2 10 mV IDS = -10 A VGS = VDS. VGS1 - VGS2. Gate Threshold Temperature TCVT mV/ C mV/ C. Drift On Drain IDS (ON) 3 mA VGS = VDS = 5V -2 mA VGS = VDS = -5V.

7 Current Trans-. Gfs 1 mmho VDS = 5V IDS= 10mA mmho VDS = -5V IDS= -10mA. conductance Mismatch Gfs % %. Output GOS 200 mho VDS = 5V IDS = 10mA 40 mho VDS = -5V IDS = -10mA. Conductance Drain Source RDS(ON) 350 500 VDS = VGS = 5V 1200 1800 VDS = VGS = -5V. ON Resistance Drain Source ON Resistance RDS(ON) % VDS = VGS = 5V % VDS = VGS = -5V. Mismatch Drain Source Breakdown BVDSS 12 V IDS = 1 A VGS =0V -12 V IDS = -1 A VGS =0V. Voltage Off Drain IDS(OFF) 10 400 pA VDS =12V IGS = 0V 10 400 pA VDS = -12V VGS = 0V. Current 4 nA TA = 125 C 4 nA TA = 125 C. Gate Leakage IGSS 30 pA VDS = 0V VGS =12V 1 30 pA VDS = 0V VGS =-12V. Current 1 nA TA = 125 C 1 nA TA = 125 C.

8 Input CISS 1 3 pF 1 3 pF. Capacitance ALD1105 Advanced Linear Devices 2 of 9. TYPICAL P-CHANNEL PERFORMANCE CHARACTERISTICS. OUTPUT CHARACTERISTICS LOW VOLTAGE OUTPUT. CHARACTERISTICS. 500. VBS = 0V VGS = -12V. DRAIN SOURCE CURRENT. -10. DRAIN SOURCE CURRENT. VGS = -12V TA = 25 C. VBS = 0V 250 -6V. TA = 25 C. -4V. -10V. -2V. ( A). (mA). 0. -8V. -6V -250. -4V. -2V. 0 -500. 0 -2 -4 -6 -8 -10 -12 -320 -160 0 160 320. DRAIN SOURCE VOLTAGE (V) DRAIN SOURCE VOLTAGE (mV). FORWARD TRANSCONDUCTANCE TRANSFER CHARACTERISTIC. vs. DRAIN SOURCE VOLTAGE WITH SUBSTRATE BIAS. -20. FORWARD TRANSCONDUCTANCE. VBS = 0V IDS = -5mA VBS = 0V. DRAIN SOURCE CURRENT.

9 F = 1 KHz 2V 4V. -15 6V. 8V. 10V. (mmho). 12V. ( A). TA = +125 C -10. TA = +25 C. IDS = -1mA. -5. VGS = VDS. TA = 25 C. 0. 0 -2 -4 -6 -8 -10 -12 0 DRAIN SOURCE VOLTAGE (V) GATE SOURCE VOLTAGE (V). DRAIN SOURCE ON RESISTANCE OFF DRAIN CURRENT vs. RDS (ON) vs. GATE SOURCE VOLTAGE AMBIENT TEMPERATURE. 100 1000. DRAIN SOURCE ON RESISTANCE. OFF DRAIN SOURCE CURRENT. VDS = VDS = -12V. VBS = 0V VGS = VBS = 0V. 10 TA = +125 C 100. (K ). (pA). 1 10. TA = +25 C. 1. 0 -2 -4 -6 -8 -10 -12 -50 -25 0 +25 +50 +75 +100 +125. GATE SOURCE VOLTAGE (V) AMBIENT TEMPERATURE ( C). ALD1105 Advanced Linear Devices 3 of 9. TYPICAL N-CHANNEL PERFORMANCE CHARACTERISTICS.

10 OUTPUT CHARACTERISTICS LOW VOLTAGE OUTPUT. CHARACTERISTICS. 1000. VGS = 12V VBS = 0V VGS = 12V. 20 VBS = 0V. DRAIN SOURCE CURRENT. DRAIN SOURCE CURRENT. TA = 25 C. TA = 25 C 10V 500 6V. 15 4V. 8V. 2V. (mA). ( A). 0. 10 6V. -500. 5 4V. 2V. 0 -1000. 0 2 4 6 8 10 12 -160 -80 0 80 160. DRAIN SOURCE VOLTAGE (V) DRAIN SOURCE VOLTAGE (mV). FORWARD TRANSCONDUCTANCE TRANSFER CHARACTERISTIC. vs. DRAIN SOURCE VOLTAGE WITH SUBSTRATE BIAS. 20 20. FORWARD TRANSCONDUCTANCE. VBS = 0V VGS = VDS. DRAIN SOURCE CURRENT. 10 TA = 25 C. f = 1 KHz IDS = 10mA. 15. 5 TA = +25 C. TA = +125 C VBS = 0V -2V -4V. (mmho). ( A). 2 10 -6V. -8V. 1 -10V. 5. -12V. IDS = 1mA.