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1 DMG1012T Document number: DS31783 Rev. 6 - 2 1 of 7 September 2018 Diodes Incorporated DMG1012T N- channel ENHANCEMENT MODE MOSFET Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected up to 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Mechanical Data Case: SOT523 Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Alloy 42 Leadframe.

2 Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: grams (Approximate) Ordering Information (Note 5) Part Number Qualification Case Packaging DMG1012T-7 Commercial SOT523 3000/Tape & Reel DMG1012T-13 Commercial SOT523 10000/Tape & Reel DMG1012TQ-7 Automotive SOT523 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See for more information about Diodes Incorporated s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3 3. Halogen- and Antimony-free "Green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to 5. For packaging details, go to our website at 6. The ESD gate protection diode is only designed to protect against ESD events. No gate-source voltage greater than the maximum VGSS rating (given on page 2) can be applied.

4 Marking Information Date Code Key Year 2009 .. 2018 2019 2020 2021 2022 2023 2024 2025 2026 Code W .. F G H I J K L M N Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D SOT523 Top View Equivalent Circuit (Note 6) Top View GSDESD PROTECTED TO 2kVNA1 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: F = 2018) M = Month (ex: 9 = September) NA1 YMESD PROTECTION TO 2kV DMG1012T Document number: DS31783 Rev. 6 - 2 2 of 7 September 2018 Diodes Incorporated DMG1012T Maximum Ratings (@TA = +25 C, unless otherwise specified.)

5 Characteristic Symbol Value Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS 6 V Continuous Drain Current (Note 7) Steady State TA = +25 C TA = +85 C ID A Pulsed Drain Current IDM 3 A Thermal Characteristics (@TA = +25 C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 7) PD W Thermal Resistance, Junction to Ambient (Note 7) R JA 452 C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 C Electrical Characteristics (@TA = +25 C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS 20 V VGS = 0V, ID = 250 A Zero Gate Voltage Drain Current TJ = +25 C IDSS 100 nA VDS = 20V, VGS = 0V Gate-Source Leakage IGSS A VGS = , VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(TH) V VDS = VGS, ID = 250 A Static Drain-Source On-Resistance RDS(ON)

6 VGS = , ID = 600mA VGS = , ID = 500mA VGS = , ID = 350mA Forward Transfer Admittance |Yfs| S VDS = 10V, ID = 400mA Diode Forward Voltage VSD V VGS = 0V, IS = 150mA DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss pF VDS = 16V, VGS = 0V, f = Output Capacitance Coss pF Reverse Transfer Capacitance Crss pF Total Gate Charge Qg pC VGS = , VDS = 10V, ID = 250mA Gate-Source Charge Qgs pC Gate-Drain Charge Qgd pC Turn-On Delay Time tD(ON) ns VDD = 10V, VGS = , RL = 47 , RG = 10 , ID = 200mA Turn-On Rise Time tR ns Turn-Off Delay Time tD(OFF) ns Turn-Off Fall Time tF ns Notes: 7.

7 Device mounted on FR-4 PCB, with minimum recommended pad layout. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMG1012T Document number: DS31783 Rev. 6 - 2 3 of 7 September 2018 Diodes Incorporated DMG1012T 1 Typical Output CharacteristicsV , DRAIN-SOURCE VOLTAGE (V)DSI, DRAIN CURRENT (A)DV = = = = = = = 3 Typical On-Resistance vs. Drain Current and Gate VoltageI , DRAIN-SOURCE CURRENT (A)DR, DRAIN-SOURCE ON-RESISTANCE ()DS(ON) V= V= V= 5 On-Resistance Variation with Temperature-50-250255075100125150T , JUNCTION TEMPERATURE ( )JR, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED)DS(ON)V = = = = 6 On-Resistance Variation with Temperature-50-250255075100125150T , JUNCTION TEMPERATURE ( )JR, DRAIN-SOURCE ON-RESISTANCE ()DS(ON) V = = = = 500mAGSD0 0 I , DRAIN CURRENT (A) Fig.

8 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature D R , D R A I N - S O U R C E O N - R E S I S T A N C E ( ) D S ( O N ) T = -55 C A T = 25 C A T = 85 C A T = 125 C A T = 150 C A V = GS 0 0 1 2 3 Fig. 2 Typical Transfer Characteristics V , GATE SOURCE VOLTAGE (V) GS I , D R A I N C U R R E N T ( A ) D V = 5V DS T = -55 C A T = 25 C A T = 125 C A T = 150 C A T = 85 C A ID, DRAIN CURRENT (A) RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) ( C) ( C) DMG1012T Document number: DS31783 Rev. 6 - 2 4 of 7 September 2018 Diodes Incorporated DMG1012T , SOURCE-DRAIN VOLTAGE (V)SDFig.

9 8 Diode Forward Voltage vs. Current0246810I, SOURCE CURRENT (A)ST = 25 A11010005101520 Fig. 9 Typical CapacitanceV , DRAIN-SOURCE VOLTAGE (V)DSC, CAPACITANCE (pF) 1 10 1 10 100 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 11 SOA, Safe Operation Area TJ(Max) = 150 C TC = 25 C Single Pulse DUT on 1*MRP Board VGS = 10V RDS(ON) Limited DC PW = 10s PW = 1s PW = 100ms PW = 10ms PW = 1ms PW = 100 s 1 10 100 1,000 0 4 8 12 16 20 Fig. 10 Typical Drain-Source Leakage Current vs.

10 Drain-Source Voltage V , DRAIN-SOURCE VOLTAGE (V) DS I , D R A I N - S O U R C E L E A K A G E C U R R E N T ( n A ) D S S T = 25 C A T = 85 C A T = 125 C A T = 150 C A 0 V , G A T E T H R E S H O L D V O L T A G E ( V ) G S ( T H ) Fig. 7 Gate Threshold Variation vs. Ambient Temperature -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE ( C) A I = 250 A D TA = 25 C VGS(TH), GATE THRESHOLD VOLTAGE (V) IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) DMG1012T Document number: DS31783 Rev. 6 - 2 5 of 7 September 2018 Diodes Incorporated DMG1012T Fig.