General Description Product Summary

1 AOK40B120H1. TM. 1200V, 40A AlphaIGBT. With Soft and Fast Recovery Anti-parallel Diode General Description Product Summary Latest AlphaIGBT ( IGBT) technology VCE 1200V. 1200V breakdown voltage IC (TC=100 C) 40A. Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) High efficient turn-on di/dt controllability Very high switching speed Low turn-off switching loss and softness Very good EMI behavior Applications Welding Machines UPS & Solar Inverters Very High Switching Frequency Applications Top View TO-247 C. G. E E. C. AOK40B120H1 G. Orderable Part Number Package Type Form Minimum Order Quantity AOK40B120H1 TO247 Tube 240. Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter Symbol AOK40B120H1 Units Collector-Emitter Voltage V CE 1200 V.

2 Gate-Emitter Voltage V GE 30 V. Continuous Collector TC=25 C IC. 80. A. Current TC=100 C 40. Pulsed Collector Current, Limited by TJmax I CM 120 A. Turn off SOA, VCE 650V, Limited by TJmax I LM 120 A. Continuous Diode TC=25 C 48. IF A. Forward Current TC=100 C 24. Diode Pulsed Current, Limited by TJmax I FM 120 A. TC=25 C 500. PD W. Power Dissipation TC=100 C 250. Junction and Storage Temperature Range T J , T STG -55 to 175 C. Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL 300 C. Thermal Characteristics Parameter Symbol AOK40B120H1 Units Maximum Junction-to-Ambient R JA 40 C/W. Maximum IGBT Junction-to-Case R JC C/W. Maximum Diode Junction-to-Case R JC C/W. : February 2017 Page 1 of 9. AOK40B120H1.

3 Electrical Characteristics (TJ=25 C unless otherwise noted). Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS. BV CES Collector-Emitter Breakdown Voltage IC=1mA, VGE=0V, TJ=25 C 1200 - - V. TJ=25 C - V CE(sat) Collector-Emitter Saturation Voltage VGE=15V, IC=40A TJ=125 C - - V. TJ=175 C - - TJ=25 C - VF Diode Forward Voltage VGE=0V, IF=40A TJ=125 C - - V. TJ=175 C - - V GE(th) Gate-Emitter Threshold Voltage VCE=5V, IC=1mA - - V. TJ=25 C - - 10. I CES Zero Gate Voltage Collector Current VCE=1200V, VGE=0V TJ=125 C - - 1000 A. TJ=175 C - - 10000. I GES Gate-Emitter leakage current VCE=0V, VGE= 30V - - 100 nA. g FS Forward Transconductance VCE=20V, IC=40A - 45 - S. DYNAMIC PARAMETERS. C ies Input Capacitance - 3910 - pF.

4 C oes Output Capacitance VGE=0V, VCC=25V, f=1 MHz - 230 - pF. C res Reverse Transfer Capacitance - 100 - pF. Qg Total Gate Charge - 128 - nC. Q ge Gate to Emitter Charge VGE=15V, VCC=960V, IC=40A - 36 - nC. Q gc Gate to Collector Charge - 60 - nC. Rg Gate resistance VGE=0V, VCC=0V, f=1 MHz - 14 - . SWITCHING PARAMETERS, (Load Inductive, TJ=25 C). t D(on) Turn-On DelayTime - 73 - ns tr Turn-On Rise Time - 60 - ns t D(off) Turn-Off Delay Time TJ=25 C - 230 - ns tf Turn-Off Fall Time VGE=15V, VCC=600V, IC=40A, - 32 - ns E on Turn-On Energy RG= - - mJ. E off Turn-Off Energy - - mJ. E total Total Switching Energy - - mJ. t rr Diode Reverse Recovery Time - 387 - ns TJ=25 C. Q rr Diode Reverse Recovery Charge - - C. IF=40A, di/dt=200A/ s, VCC=600V.

5 I rm Diode Peak Reverse Recovery Current - - A. SWITCHING PARAMETERS, (Load Inductive, TJ=175 C). t D(on) Turn-On DelayTime - 53 - ns tr Turn-On Rise Time - 80 - ns t D(off) Turn-Off Delay Time TJ=175 C - 290 - ns tf Turn-Off Fall Time VGE=15V, VCC=600V, IC=40A, - 85 - ns E on Turn-On Energy RG= - - mJ. E off Turn-Off Energy - - mJ. E total Total Switching Energy - - mJ. t rr Diode Reverse Recovery Time - 564 - ns TJ=175 C. Q rr Diode Reverse Recovery Charge - - C. IF=40A, di/dt=200A/ s, VCC=600V. I rm Diode Peak Reverse Recovery Current - 10 - A. APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT. ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS.

6 AOS RESERVES THE RIGHT TO IMPROVE. Product DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. : February 2017 Page 2 of 9. AOK40B120H1. TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS. 150 150. 15V 13V 20V. 17V 11V 17V 11V. 120 120. 15V. 20V 13V. 90. IC (A). 90. IC (A). 9V. 60 60. 9V. 30 30. VGE=7V. VGE= 7V. 0 0. 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7. VCE (V) VCE (V). Figure 1: Output Characteristic Figure 2: Output Characteristic (Tj=25 C) (Tj=175 C). 100 100. VCE=20V. 80 80 -40 C. 60. IC (A). 175 C 60. 25 C. IF (A). 40 40. 25 C. 20 20 175 C. -40 C. 0 0. 3 6 9 12 15 0 1 2 3 4 5. VGE (V) VF (V). Figure 3: Transfer Characteristic Figure 4: Diode Characteristic 5 5. 80A. 4 4. IC=80A 40A. VCE(sat) (V). 3 3. VF (V). IC=40A. 2 2 5A. 1 IC=20A 1.

7 IF=1A. 0 0. 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175. Temperature ( C) Temperature ( C). Figure 5: Collector-Emitter Saturation Voltage vs. Figure 6: Diode Forward voltage vs. Junction Junction Temperature Temperature : Februanry 2017 Page 3 of 9. AOK40B120H1. TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS. 15 10000. VCE=960V. IC=40A Cies 12. 1000. Coes VGE (V). Capacitance (pF). 9. 100. 6 Cres 10. 3. 0 1. 0 30 60 90 120 150 0 8 16 24 32 40. Qg (nC) VCE (V). Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristic 600. 500. Power Disspation (W). 400. 300. 200. 100. 0. 25 50 75 100 125 150 175. TCASE ( C). Figure 10: Power Disspation as a Function of Case 100 1E-02. 1E-03. 80. Current rating IC (A). 1E-04.

8 60. ICE(S) (A). VCE=1200V. 1E-05. 40 VCE=960V. 1E-06. 20. 1E-07. 0 1E-08. 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175. TCASE ( C) Temperature ( C). Figure 11: Current De-rating Figure 12: Diode Reverse Leakage Current vs. Junction Temperature : February 2017 Page 4 of 9. AOK40B120H1.. TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS. 10000 10000. Td(off) Td(off). Tf Tf Td(on) Td(on). 1000 Tr 1000 Tr Switching Time (ns). Switching Time (ns). 100 100. 10 10. 1 1. 20 30 40 50 60 70 80 0 20 40 60 80. IC (A) Rg ( ). Figure 13: Switching Time vs. IC Figure 14: Switching Time vs. Rg (Tj=175 C, VGE=15V, VCE=600V, Rg= ) (Tj=175 C, VGE=15V, VCE=600V, IC=40A). 10000 7. Td(off). Tf Td(on) 6. 1000 Tr 5. Switching Time (ns). VGE(TH) (V).

9 100 4. 3. 10. 2. 1 1. 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175. TJ ( C) TJ ( C). Figure 15: Switching Time Figure 16: VGE(TH) vs. Tj (VGE=15V, VCE=600V, IC=40A, Rg= ). : February 2017 Page 5 of 9. AOK40B120H1.. TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS. 14 14. Eoff Eoff 12 12 Eon Eon Etotal Switching Energy (mJ). SwitchIng Energy (mJ). Etotal 10 10. 8 8. 6 6. 4 4. 2 2. 0 0. 20 30 40 50 60 70 80 0 20 40 60 80. IC (A) Rg ( ). Figure 17: Switching Loss vs. IC Figure 18: Switching Loss vs. Rg (Tj=175 C, VGE=15V, VCE=600V, Rg= ) (Tj=175 C, VGE=15V, VCE=600V, IC=40A). 6 6. Eoff Eoff 5 Eon 5 Eon Switching Energy (mJ). Etotal Etotal Switching Energy (mJ). 4 4. 3 3. 2 2. 1 1. 0 0. 25 50 75 100 125 150 175 200 250 300 350 400 450 500.

10 TJ ( C) VCE (V). Figure 19: Switching Loss vs. Tj Figure 20: Switching Loss vs. VCE. (VGE=15V, VCE=600V, IC=40A, Rg= ) (Tj=175 C, VGE=15V, IC=40A, Rg= ). : February 2017 Page 6 of 9. AOK40B120H1.. TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS. 4000 100 800 30. 175 C 175 C. 3500 700. 25. 80. 3000 600. 20. 2500 500. Qrr (nC). 60. Trr (ns). Irm (A). 2000 400 Trr 15. S. Qrr 25 C. 1500 25 C 40 300. 175 C 10. 1000 200 S. Irm 20. 25 C 175 C 5. 500 100. 25 C. 0 0 0 0. 20 30 40 50 60 70 80 20 30 40 50 60 70 80. IF (A) IF (A). Figure 21: Diode Reverse Recovery Charge and Peak Figure 22: Diode Reverse Recovery Time and Softness Current vs. Conduction Current Factor vs. Conduction Current (VGE=15V, VCE=600V, di/dt=200A/ s) (VGE=15V, VCE=600V, di/dt=200A/ s).