General Description Product Summary • Trench Power …

1 AON6284 AGeneral DescriptionProduct SummaryVDS ID (at VGS=10V)48A RDS(ON) (at VGS=10V)< RDS(ON) (at VGS= )< Applications100% UIS Tested100% Rg Tested80V N-Channel AlphaSGTTMO rderable Part NumberPackage TypeFormMinimum Order Quantity80V Trench Power AlphaSGTTM technology Low RDS(ON) Logic Driven RoHS and Halogen-Free CompliantAON6284 ADFN 5x6 Tape & Reel3000 Synchronous Rectification for Quick Charger Synchronous Rectification for AC/DC adapter and DC/DC brick powerTop View12348765 PIN1 DFN5X6 Top ViewBottom ViewG DSPIN1 SymbolVDSVGSIDMIASA valanche energy L= SpikeVSPIKETJ, TSTGS ymbolt 10sSteady-StateSteady-StateR JCTA=25 CTA=70 CTC=25 CTC=100 CTC=25 CAvalanche Current CContinuous DrainCurrentThermal CharacteristicsParameterMaxTA=70 CUnitsJunction and Storage Temperature Range-55 to 150 TypPDSMWTA=25 Dissipation AMaximum Junction-to-Ambient A C/WR JA204525 WIDVA40A170 IDSM16mJ802048 VAAbsolute Maximum Ratings TA=25 C unless otherwise noted 20 VMaximumUnitsMaximum Junction-to-Case C/W C/WMaximum Junction-to-Ambient A Dissipation B22TC=100 C 10 sPD809656 Gate-Source VoltagePulsed Drain Current VoltageContinuous DrainCurrent G.

2 June 1 of 6 AON6284A SymbolMin Typ Max UnitsBVDSS80 VVDS=80V, VGS=0V1TJ=55 C5 IGSS 100 nAVGS(th)Gate Threshold Qg(10V)3652nCQg( ) (on) (off)32nstf6nsm VGS=10V, VDS=40V, ID=20 ATotal Gate ChargeElectrical Characteristics (TJ=25 C unless otherwise noted)STATIC PARAMETERSP arameterConditionsGate resistancef=1 MHzIDSS AZero Gate Voltage Drain CurrentDrain-Source Breakdown VoltageID=250 A, VGS=0 VRDS(ON)Static Drain-Source On-ResistanceGate Source ChargeGate Drain ChargeTotal Gate ChargeSWITCHING PARAMETERSTurn-On DelayTimeVDS=0V, VGS= 20 VMaximum Body-Diode Continuous Current GInput CapacitanceGate-Body leakage currentTurn-Off DelayTimeTurn-Off Fall TimeVGS=10V, VDS=40V, RL=2 ,RGEN=3 Diode Forward VoltageDYNAMIC PARAMETERSVGS= , ID=20 ATurn-On Rise TimeReverse Transfer CapacitanceVGS=0V, VDS=40V, f=1 MHzVDS=VGS, ID=250 AOutput CapacitanceForward TransconductanceIS=1A, VGS=0 VVDS=5V, ID=20 AVGS=10V, ID=20 Atf6nstrr23nsQrr91nCAPPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED.

3 AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVEPRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT Diode Reverse Recovery ChargeBody Diode Reverse Recovery TimeIF=20A, di/dt=500A/ sTurn-Off Fall TimeIF=20A, di/dt=500A/ sA. The value of R JAis measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25 C. The Power dissipation PDSMis based on R JAt 10s and the maximum allowed junction temperature of 150 C. The value in any given application depends on the user's specific board The Power dissipation PDis based on TJ(MAX)=150 C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150 The R JAis the sum of the thermal impedance from junction to case R JCand case to The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150 C.

4 The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25 C. : June 2 of 6 AON6284A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS02040608010012012345ID (A)VGS (Volts)Figure 2: Transfer Characteristics (Note E)345678051015202530 RDS(ON)(m )ID(A)Figure 3: On-Resistance vs. Drain Current and Gate 100 125 150 175 Normalized On-ResistanceTemperature ( C)Figure 4: On-Resistance vs. Junction Temperature VGS= C125 CVDS=5 VVGS= (A)VDS(Volts)Figure 1: On-Region Characteristics (Note E)VGS= 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) + + + (A)VSD(Volts)Figure 6: Body-Diode Characteristics (Note E)25 C125 CFigure 4: On-Resistance vs. Junction Temperature (Note E)048121620246810 RDS(ON)(m )VGS(Volts)Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)ID=20A25 C125 C : June 3 of 6 AON6284A TYPICAL ELECTRICAL AND THERMAL (W)Pulse Width (s)Figure 10: Single Pulse Power Rating Junction-to-0246810010203040 VGS(Volts)Qg(nC)Figure 7: Gate-Charge Characteristics0500100015002000250030003 5000 10 20 30 40 50 60 70 80 Capacitance (pF)VDS(Volts)Figure 8: Capacitance CharacteristicsCissCossCrssVDS=40 VID=20 ATJ(Max)=150 CTC=25 C10 (Amps)VDS(Volts)V> or equal to s1msDCRDS(ON) limitedTJ(Max)=150 CTC=25 C100 s10msFigure 10: Single Pulse Power Rating Junction-to-Case (Note F) JCNormalized Transient Thermal ResistancePulse Width (s)Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)Single PulseD=Ton/TTJ,PK=TC+ JCTonTPDMIn descending orderD= , , , , , , single pulseVGS> or equal to 9: Maximum Forward Biased Safe Operating Area (Note F)R JC= C/W.

5 June 4 of 6 AON6284A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS0204060800255075100 125 150 Power Dissipation (W)TCASE( C)Figure 12: Power De-rating (Note F)01020304050600255075100 125 150 Current rating ID (A)TCASE( C)Figure 13: Current De-rating (Note F) (W)Pulse Width (s)TA=25 JANormalized Transient Thermal ResistancePulse Width (s)Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)Single PulseD=Ton/TTJ,PK=TA+ JATonTPDMIn descending orderD= , , , , , , single pulsePulse Width (s)Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)R JA=55 C/W : June 5 of 6 AON6284A -+VDCIgVdsDUT-+VDCVgsVgs10 VQgQgsQgdChargeGate Charge Test Circuit & Waveform-+VDCDUTVddVgsVdsVgsRLRgVgsVds10 %90%Resistive Switching Test Circuit & Waveformsttrd(on)tontd(off)tftoffLBVU nclamped Inductive Switching (UIS) Test Circuit & WaveformsVdsDSS2E = 1/2 LIARARF igure A: Gate Charge Test Circuit & WaveformsFigure B: Resistive Switching Test Circuit & WaveformsFigure C: Unclamped Inductive Switching (UIS) Test Circuit & WaveformsVddVgsIdVgsRgDUT-+VDCVgsVdsIdVg sIIgVgs-+VDCDUTLVgsVdsIsdIsdDiode Recovery Test Circuit & WaveformsVds -Vds +IFARdI/dtIRMrrVddVddQ = - IdttrrFigure D: Diode Recovery Test Circuit & Waveforms : June 6 of 6