GP1S097HCZ0F - Sharp Global

1 GP1S097 HCZ0F1 Sheet No.: D3-A01201 FENDate Jun. 30. 2005 Sharp CorporationNotice The content of data sheet is subject to change without prior the absence of confi rmation by device specifi cation sheets, Sharp takes no responsibility for any defects that may occur in equipment using any Sharp devices shown in catalogs, data books, etc. Contact Sharp in order to obtain the latest device specifi cation sheets before using any Sharp : 2mm, Slit : Phototransistor Output, Compact Transmissive Photointerrupter DescriptionGP1S097 HCZ0F is a compact-package, phototransis-tor output, transmissive photointerrupter, with opposing emitter and detector in a molding that provides non-con-tact sensing. The compact package series is a result of unique technology combing transfer and injection mold-ing. This device has hole that passes through the base of the device, for assembly or fi xing, and it has a wide gap.

2 Features1. Transmissive with phototransistor output2. Highlights : Compact Size Wide Gap3. Key Parameters : Gap Width : 2mm Slit Width (detector side): Package : RoHS directive compliant Agency approvals/Compliance1. Compliant with RoHS directive Applications1. General purpose detection of object presence or motion. 2. Example : printer, lens control for camera2 Sheet No.: D3-A01201 FENGP1S097 HCZ0F Internal Connection Diagram Outline Dimensions(Unit : mm)Product mass : approx. material : SnCu (Cu : TYP. 2%)Top view( )a ( )2 Center of light path( )( )Slit width( ) +0 + Unspecifi ed tolerance : ( ) : Reference dimensions The dimensions shown do not include those of 's dimensions : MAX. The dimensions indicated by refer to those measured from the lead base. The lead may be exposed at the shaded view12134234 AnodeCollectorEmitterCathodeCountry of originJapan3 Sheet No.

3 : D3-A01201 FENGP1S097 HCZ0F Absolute Maximum Ratings Electro-optical Characteristics(Ta=25 C)ParameterSymbolRatingUnitInputForward currentIF50mAReverse voltageVR6 VPower dissipationP75mWOutputCollector-emitter voltageVCEO35 VEmitter-collector voltageVECO6 VCollector currentIC20mACollector power dissipationPC75mWTotal power dissipationPtot100mWOperating temperatureTopr 25 to +85 CStorage temperatureTstg 40 to +100 C 1 Soldering temperatureTsol260 C 1 For 5s or less(Ta=25 C ) voltageVFIF=20mA currentIRVR=3V 10 AOutput Collector dark currentICEOVCE=20V 100nATransfercharac-teristicsCollector currentICVCE=5V, IF=5mA100 400 ACollector-emitter saturation voltageVCE(sat)IF=10mA, IC=40 A timeRise timetrVCE=5V, IC=100 A, RL=1k 50150 sFall timetf 50150 s1mm or moreSoldering area4 Sheet No.: Collector Current vs. Collector-emitter Relative Collector Current vs. Ambient Forward Current vs.

4 Forward Collector Current vs. Forward Forward Current vs. Ambient Power Dissipation vs. Ambient Temperature0605040302010 250255075 85100 Forward current IF (mA)Ambient temperature Ta ( C)060408075100120 251005075 850252015 Power dissipation P, Pc, Ptot (mW)Ambient temperature Ta ( C)PtotP, PcForward current IF (mA)Forward voltage VF (V) 25 C 25 C 75 C 50 C0 CForward current IF (mA) current IC (mA)VCE=5 VTa=25 CCollector current IC (mA)Collector-emitter voltage VCE (V) collector current (%)Ambient temperature Ta ( C) IF=5mAVCE=5 VIC=100% at Ta=25 C0120110100908070605040302010 250 2550755 Sheet No.: Collector-emitter Saturation Voltage vs. Ambient Collector Dark Current vs. Ambient Response Time vs. Load Test Circuit for Response TimeRemarks : Please be aware that all data in the graph are just for reference and not for saturation voltage VCE (sat) (V)Ambient temperature Ta ( C) IF=10mAIC=40 time ( s)Load resistance RL (k )VCE=5 VIC=100 ATa=25 C11 1010 910 710 610 80255075100 Collector dark current ICEO (A)Ambient temperature Ta ( C) VCE 20 VRelative collector current (%) moving distance L (mm)IF=5mAVCE=5VL0 Relative collector current (%) moving distance L (mm)IF=5mAVCE= Detecting Position Characteristics (1) Detecting Position Characteristics (2)6 Sheet No.

5 : D3-A01201 FENGP1S097 HCZ0F Design Considerations Design guide1) Prevention of detection errorTo prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to the external ) Position of opaque boardOpaque board shall be installed at place or more from the top of elements.(Example)This product is not designed against irradiation and incorporates non-coherent IRED. DegradationIn general, the emission of the IRED used in photointerrupter will degrade over the case of long term operation, please take the general IRED degradation (50% degradation over 5 years) into the design consideration. PartsThis product is assembled using the below parts. Photodetector (qty. : 1)CategoryMaterialMaximum Sensitivity wavelength (nm)Sensitivity wavelength (nm)Response time ( s)PhototransistorSilicon (Si)930700 to 1 20020 Photo emitter (qty. : 1)CategoryMaterialMaximum light emitting wavelength (nm)I/O Frequency (MHz)Infrared emitting diode(non-coherent)Gallium arsenide (GaAs) MaterialCaseLead frameLead frame platingBlack polyphernylene sulfi de resin (UL94 V-0)42 AlloySnCu or or more7 Sheet No.

6 : D3-A01201 FENGP1S097 HCZ0F Manufacturing Guidelines Soldering MethodFlow Soldering:Soldering should be completed below 260 C and within 5 solder within one area is 1mm or more away from the bottom of take care not to let any external force exert on lead don't do soldering with preheating, and please don't do soldering by refl solderingHand soldering should be completed within 3 s when the point of solder iron is below 350 solder within one don't touch the terminals directly by soldering product shall treat at normal noticePlease test the soldering method in actual condition and make sure the soldering works fine, since the impact on the junction between the device and PCB varies depending on the cooling and soldering conditions. Cleaning instructionsSolvent cleaning :Solvent temperature should be 45 C or below. Immersion time should be 3 minutes or cleaning :Do not execute ultrasonic solvent materials :Ethyl alcohol, Methyl alcohol and Isopropyl alcohol.

7 Presence of ODCThis product shall not contain the following they are not used in the production process for this substances : CFCs, Halon, Carbon tetrachloride, (Methylchloroform)Specifi c brominated fl ame retardants such as the PBBOs and PBBs are not used in this product at product shall not contain the following materials banned in the RoHS Directive (2002/95/EC). Lead, Mercury, Cadmium, Hexavalent chromium, Polybrominated biphenyls (PBB), Polybrominated diphenyl ethers (PBDE).8 Sheet No.: D3-A01201 FENGP1S097 HCZ0F Package specifi cation Sleeve packagePackage materialsSleeve : PolystyreneStopper : Styrene-ElastomerPackage methodMAX. 100 pcs. of products shall be packaged in a sleeve. Both ends shall be closed by tabbed and tabless 50 sleeves in one No.: D3-A01201 FENGP1S097 HCZ0F Important Notices The circuit application examples in this publication are provided to explain representative applications of Sharp devices and are not intended to guarantee any circuit design or license any intellectual property rights.

8 Sharp takes no responsibility for any problems related to any intellectual property right of a third party resulting from the use of Sharp 's devices. Contact Sharp in order to obtain the latest device specification sheets before using any Sharp device. Sharp reserves the right to make changes in the specifi cations, characteristics, data, materials, structure, and other contents described herein at any time without notice in order to improve design or reliability. Manufacturing locations are also subject to change without notice. Observe the following points when using any devices in this publication. Sharp takes no responsibility for damage caused by improper use of the devices which does not meet the conditions and absolute maximum ratings to be used specifi ed in the relevant specifi cation sheet nor meet the following conditions:(i) The devices in this publication are designed for use in general electronic equipment designs such as:--- Personal computers--- Offi ce automation equipment--- Telecommunication equipment [terminal]--- Test and measurement equipment--- Industrial control--- Audio visual equipment--- Consumer electronics(ii) Measures such as fail-safe function and redundant design should be taken to ensure reliability and safety when Sharp devices are used for or in connection with equipment that requires higher reliability such as:--- Transportation control and safety equipment ( , aircraft, trains, automobiles, etc.)

9 --- Traffi c signals--- Gas leakage sensor breakers--- Alarm equipment--- Various safety devices, etc.(iii) Sharp devices shall not be used for or in connection with equipment that requires an extremely high level of reliability and safety such as:--- Space applications--- Telecommunication equipment [trunk lines]--- Nuclear power control equipment--- Medical and other life support equipment ( , scuba). If the Sharp devices listed in this publication fall within the scope of strategic products described in the Foreign Exchange and Foreign Trade Law of Japan, it is necessary to obtain approval to export such Sharp devices. This publication is the proprietary product of Sharp and is copyrighted, with all rights reserved. Under the copyright laws, no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose, in whole or in part, without the express written permission of Sharp .

10 Express written permission is also required before any use of this publication may be made by a third party. Contact and consult with a Sharp representative if there are any questions about the contents of this publication.[H137]