HiPerRFTM IXFH6N100F VDSS Power MOSFETs …

1 2001 IXYS CORPORATION, All Rights ReservedDS98732A(08/01)HiPerRFTMP ower MOSFETsF-Class: MegaHertz SwitchingFeatureszRF capable MOSFETszDouble metal process for low gate resistancezRugged polysilicon gate cell structurezUnclamped Inductive Switching (UIS)ratedzLow package inductance- easy to drive and to protectzFast intrinsic rectifierApplicationszDC-DC converterszSwitched-mode and resonant-modepower supplies, >500kHz switchingzDC MHz industrial applicationszPulse generationzLaser driversz RF amplifiersAdvantageszSpace savingszHigh Power densityVDSS= 1000 VID25= 6 ARDS(on) trr 250nsN-Channel Enhancement ModeAvalanche Rated, Low Qg, LowIntrinsic Rg, High dV/dt, Low trrIXFH6N100 FIXFT6N100 FSymbolTest ConditionsMaximum RatingsVDSSTJ= 25 C to 150 C1000 VVDGRTJ= 25 C to 150 C, RGS = 1M 1000 VVGSSC ontinuous 20 VVGSMT ransient 30 VID25TC= 25 C6 AIDMTC= 25 C, Pulse Width Limited by TJM24 AIARTC= 25 C6 AEASTC= 25 C700 mJdV/dtIS IDM, di/dt < 100A/ s, VDD VDSS 5 V/ns TJ 150 C, RG = 2 PDTC= 25 C180 WTJ-55.

2 +150 CTJM150 CTstg-55 .. +150 CTLM aximum Lead Temperature for Soldering300 CTSOLDP lastic Body for 10s260 CMdMounting Torque (TO-247) 4 gSymbolTest Conditions Characteristic Values(TJ = 25 C, Unless Otherwise Specified) Min. Typ. 0V, ID = 500 A 1000 VVGS(th)VDS= VGS, ID = 20V, VDS = 0V 100 nAIDSSVDS= VDSS 50 AVGS= 0 VTJ = 125 C 1 mARDS(on)VGS= 10V, ID = ID25, Note 1 G = GateD = DrainS = SourceTAB = DrainTO-268 (IXFT)GSTO-247 (IXFH)TABTABIXYS Reserves the Right to Change Limits, Test Conditions, and : 1. Pulse test, t 300 s, duty cycle d 2 %IXYS MOSFETs and IGBTs are covered4,835,5924,931,8445,049,9615,237, 4816,162,6656,404,065 B16,683,3446,727,5857,005,734 B2 7,157,338B2by one or more of the following patents:4,850,0725,017,5085,063,3075,381 ,0256,259,123 B16,534,3436,710,405 B2 6,759,6927,063,975 B24,881,1065,034,7965,187,1175,486,7156, 306,728 B16,583,5056,710,4636,771,478 B2 7,071,537 SymbolTest ConditionsCharacteristic Values(TJ = 25 C unless otherwise specified) Min.

3 Typ. 10V, ID = ID25, Note 1 1770pFCossVGS = 0V, VDS = 25V, f = 1 MHz 186pFCrss 53pFtd(on) nstr nstd(off) nstf nsQg(on) 54 nCQgsVGS= 10V, VDS = VDSS, ID = ID25 14nCQgd 27nCRthJC C/WRthCS(TO-247) C/WSource-Drain DiodeCharacteristic ValuesTJ = 25 C unless otherwise specified) Min. Typ. = 0V 6 AISMR epetitive, pulse width limited by TJM 24 AVSDIF = IS, VGS = 0V, Note 1 250 nsQRM CIRM = 6A, -di/dt = 100A/ sVR = 100V, VGS = BSC242 BSCe P TO-247 (IXFH) OutlineTO-268 OutlineMin Recommended FootprintResistive Switching TimesVGS = 10V, VDS = VDSS, ID = ID25RG = 2 (External)