CoolMOS™ 1) Power MOSFET - IXYS Corporation: …

1 2009 ixys All rights reserved1 - 420090209dIXKH 70N60C5 ixys reserves the right to change limits, test conditions and Values(TVJ = 25 C, unless otherwise specifi ed) = 10 V; ID = 44 A4045m VGS(th)VDS = VGS; ID = 3 = 600 V; VGS = 0 V TVJ = 25 C TVJ = 125 C5010 A AIGSSVGS = 20 V; VDS = 0 V100nACissCossVGS = 0 V; VDS = 100 V f = 1 MHz6800320pFpFQgQgsQgdVGS = 0 to 10 V; VDS = 400 V; ID = 44 A1503550190nCnCnCtd(on)trtd(off)tfVGS = 10 V; VDS = 400 VID = 44 A; RG = = 70 AVDSS = 600 VRDS(on) max = CoolMOS 1) Power MOSFETF eatures fast CoolMOS 1) Power MOSFET4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness Enhanced total Power densityApplications Switched mode Power supplies (SMPS) Uninterruptible Power supplies (UPS) Power factor correction (PFC) Welding Inductive heating PDP and LCD adapterMOSFETS ymbolConditionsMaximum RatingsVDSSTVJ = 25 C600 VVGS 20 VID25ID90TC = 25 CTC = 90 C7048 AAEASEAR single pulserepetitive19503mJmJdV/dtMOSFET dV/dt ruggedness VDS = V50V/nsDGSN-Channel Enhancement ModeLow RDSon, High VDSS MOSFETU ltra low gate chargeID = 11 A.

2 TC = 25 C1) CoolMOS is a trademark ofInfi neon Technologies AD (IXKH)GDSq D(TAB) 2009 ixys All rights reserved2 - 420090209dIXKH 70N60C5 ixys reserves the right to change limits, test conditions and DiodeSymbolConditionsCharacteristic Values(TVJ = 25 C, unless otherwise specifi ed) = 0 V44 AVSDIF = 44 A; VGS = 0 = 44 A; -diF/dt = 100 A/ s; VR = 400 V6001760ns CAComponentSymbolConditionsMaximum + +150 C CMdmounting .. heatsink 2009 ixys All rights reserved3 - 420090209dIXKH 70N60C5 ixys reserves the right to change limits, test conditions and 1 Power dissipationFig. 2 Typ. output characteristicsFig. 3 Typ. output characteristics0408012016001002003004005 00600700TC [ C]Ptot [ W] AD V6V7V8V10 V20 V02040608010012014005101520 VDS [V]ID]A[ V6V7V8V10 V20 V05010015020025005101520 VDS [V]ID]A[TJ = 25 C VGS =VGS =TJ = 150 C 2009 ixys All rights reserved4 - 420090209dIXKH 70N60C5 ixys reserves the right to change limits, test conditions and dimensions.

3 Single [s]ZCJht]W/K[540580620660700-60-20206010 0140180Tj [ C]V)SSD(RB]V[050010001500200020601001401 80Tj [ C]ESA]Jm[CissCossCrss1051041031021011000 50100150200 VDS [V]C]Fp[120V40 0V024681012050100150 Qgate [nC]VSG]V[25 C150 C25 C, 98%150 C, 98% [V]IF]A[25 C150 C040801201602002402803200246 810 VGS [V]ID]A[typ98 % 014 0180Tj [ C]R)no(SD[ ] V7V20 20406080100ID [A]R)no(SD[ ]VDS = TJV = 150 C ID = 44 A VGS = 10 V VDS > 2 RDS(on) max ID TJ = TJ = VDS = 50 V VGS = 0 V f = 1 MHz ID = 11 A ID = mA D = tp/T ID = 11 A pulsed Fig. 5 Drain-source on-state resistanceFig. 4 Typ. drain-source on-state resistance characteristics of IGBTFig. 7 Forward characteristic of reverse diodeFig. 8 Typ. gate chargeFig. 10 Avalanche energyFig. 11 Drain-source breakdown voltageFig. 6 Typ. transfer characteristicsFig. 9 Typ. capacitancesFig. 12 Max. transient thermal impedanceDisclaimer Notice - Information furnished is believed to be accurate and reliable.

4 However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all complete Disclaimer Notice at