HSPICE Reference Manual MOSFET Models

1 HSPICE Reference Manual : MOSFET ModelsVersion , March 2013iiHSPICE Reference Manual : MOSFET and Proprietary Information NoticeCopyright 2013 Synopsys, Inc. All rights reserved. This software and documentation contain confidential and proprietary information that is the property of Synopsys, Inc. The software and documentation are furnished under a license agreement and may be used or copied only in accordance with the terms of the license agreement. No part of the software and documentation may be reproduced, transmitted, or translated, in any form or by any means, electronic, mechanical, Manual , optical, or otherwise, without prior written permission of Synopsys, Inc.

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3 Middlefield RoadMountain View, CA iiiContentsInside this Manual ..xixThe HSPICE Documentation Set..xxKnown Limitations and Resolved STARs ..xxiConventions ..xxiiCustomer Support .. of MOSFET Models ..1 MOSFET model Usage ..2 HSPICE and MOSFET Libraries ..3 MOSFET Device Definition ..4 Reliability Analysis for HSPICE MOSFET Devices ..5 HSPICE Custom Common model Interface (CMI) ..5 TSMC model Interface (TMI) ..5 HSPICE Automatic model Selector ..6 General MOSFET model Statement ..8 model Name Identification Rule ..10 Measuring the Value of MOSFET model Card Parameters ..10 Using a model Card Defined with a Subckt Wrapper ..10 MOSFET Models (LEVELs) ..11 MOSFET model LEVEL Descriptions.

4 12 MOSFET Capacitors ..15 MOSFET Diodes ..17 MOSFET Control Options ..17 Scale Units ..18 Scaling for LEVEL 25 and 33 ..19 Bypass Option for Latent Devices ..19 Searching Models as Function of W, L..20 Number of Fingers, WNFLAG Option..21 MOSFET Output Templates..23 Output Templates for BSIM-CMG Level 72 ..34ivContentsOutput Template for Parameters in HiSIM-HVMOS (Level=73) ..38 Additional Output Templates for PSP and Other Models ..42 MOSFET SUBCKT Output Templates ..46 Safe Operating Area Voltage Warning ..49 model Pre-Processing and Parameter Flattening ..50 Use of Example Syntax .. MOSFET model Parameters..51 Basic MOSFET model Parameters ..52 Effective Width and Length Parameters.

5 57 Threshold Voltage Parameters..60 Mobility Parameters ..643. MOSFET Models : LEVELs 1 through 40..69 LEVEL 1 IDS: Schichman-Hodges model ..70 LEVEL 1 model Parameters..70 LEVEL 1 model Equations ..70 IDS Equations ..70 Effective Channel Length and Width ..71 LEVEL 2 IDS: Grove-Frohman model ..71 LEVEL 2 model Parameters..72 LEVEL 2 model Equations ..72 IDS Equations ..72 Effective Channel Length and Width ..72 Threshold Voltage, vth ..73 Saturation Voltage, vdsat..73 Mobility Reduction, ueff ..74 Channel Length Modulation ..75 Subthreshold Current, Ids..76 LEVEL 3 IDS: Empirical model ..77 LEVEL 3 model Equations ..77 IDS Equations ..77 Effective Channel Length and Width.

6 79 Threshold Voltage, vth ..79 Saturation Voltage, vdsat ..79 Effective Mobility, ueff ..80vContentsChannel Length Modulation ..80 Subthreshold Current, Ids..81 Compatibility Notes ..82 Synopsys Device model versus SPICE3 ..82 Temperature Compensation ..83 Simulation results: ..85 LEVEL 4 IDS: MOS model ..85 LEVEL 5 IDS model ..86 LEVEL 5 model Parameters..86 IDS Equations ..87 Effective Channel Length and Width ..88 Threshold Voltage, vth ..88 Saturation Voltage, vdsat..89 Mobility Reduction, UBeff ..89 Channel Length Modulation ..90 Subthreshold Current, Ids..90 Depletion Mode DC model ZENH=0 ..91 IDS Equations, Depletion model LEVEL 5 ..92 Threshold Voltage, vth.

7 93 Saturation Voltage, vdsat ..95 Mobility Reduction, UBeff ..95 Channel Length Modulation ..96 Subthreshold Current, Ids..96 LEVEL 6/LEVEL 7 IDS: MOSFET model ..98 LEVEL 6 and LEVEL 7 model Parameters..98 UPDATE Parameter for LEVEL 6 and LEVEL 7 ..99 LEVEL 6 model Equations, UPDATE=0,2 ..101 IDS Equations ..101 Effective Channel Length and Width ..101 Threshold Voltage, vth ..102 Single-Gamma, VBO=0 ..102 Effective Built-in Voltage, vbi ..103 Multi-Level Gamma, VBO>0..103 Effective Built-in Voltage, vbi for VBO>0..105 Saturation Voltage, vdsat (UPDATE=0,2) ..106 Saturation Voltage, vsat ..111 LEVEL 6 IDS Equations, UPDATE=1 ..112 Alternate DC model (ISPICE model ).

8 113 Subthreshold Current, ids..114 Effective Mobility, ueff ..115 Channel Length Modulation ..120viContentsASPEC Compatibility ..124 LEVEL 7 IDS model ..126 LEVEL 8 IDS model ..126 LEVEL 8 model Parameters..127 LEVEL 8 model Equations ..127 IDS Equations ..127 Effective Channel Length and Width ..127 Effective Substrate Doping, nsub ..127 Threshold Voltage, vth ..128 Saturation Voltage vdsat ..128 Effective Mobility, ueff ..129 Channel Length Modulation ..130 Subthreshold Current Ids ..131 LEVEL 27 SOSFET model ..132 LEVEL 27 model Parameters..134 Non-Fully Depleted SOI model ..138 model Components ..138 Obtaining model Parameters ..139 Fully Depleted SOI model Considerations.

9 141 LEVEL 38 IDS: Cypress Depletion model ..142 LEVEL 38 model Parameters..144 LEVEL 38 model Equations ..144 IDS Equations ..144 Threshold Voltage, vth ..146 Saturation Voltage, vdsat ..147 Mobility Reduction, UBeff ..148 Channel Length Modulation ..149 Subthreshold Current, ids..149 Example model File ..150 Mobility model ..150 Body Effect ..151 Saturation ..151 LEVEL 40 HP a-Si TFT model ..151 Using the HP a-Si TFT model ..151 Effect of SCALE and SCALM ..153 Noise model ..153 DELVTO Element ..153 Device model and Element Statement Example ..153 LEVEL 40 model Equations ..154 Cutoff Region (NFS=0, vgs von) ..155 Noncutoff Region (NFS 0) ..155viiContentsCgd, Cgs.

10 158 LEVEL 40 model Topology..158 References.. Models : LEVELs 50 through 76 ..161 Level 50 Philips MOS9 model ..162 JUNCAP model Parameters..167 Using the Philips MOS9 model ..168 model Statement Example ..169 Level 55 EPFL-EKV MOSFET model ..170 Single Equation model ..170 Effects Modeled ..171 Coherence of Static and Dynamic Models ..171 Bulk Reference and Symmetry ..172 EKV Intrinsic model Parameters ..174 Static Intrinsic model Equations ..177 Parameter Preprocessing..178 Bulk Referenced Intrinsic Voltages..180 Effective Channel Length and Width ..180 Short Distance Matching ..180 Reverse Short-channel Effect (RSCE) ..181 Effective Gate Voltage Including RSCE.