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章発振回路 - ieice-hbkb.org

1 -7 -4 . 1 -- 7 . 4 . 2011 10 .. 6 6-4 .. 4-1 . 4-2 4-3 .. c 2011 1/(9). 1 -7 -4 . 1 -- 7 -- 4 . 4 -- 1 . 2009 12 . 4 -- 1 -- 1 .. 4 1 . Ecut . 0 . V2 /V1 T (j2 f ) = V2 /V1 V1 . V2 . f VA f V1 = VA f cos (2 f t) . V2 = |T (j2 f )|VA f cos (2 f t + T (j2 f )) f0 . |T (j2 f0 )| = 1 T (j2 f0 ) = 0 V2 = VA f cos (2 f0 t) . f = f0 T (j2 f ) 1 0 Ecut f0 . Ecut Ecut . Vout = VA f cos (2 f0 t) T (j2 f ) |T (j2 f0 )| 1. T (j2 f0 ) = 0 .. 1 . 4 1 . 4 -- 1 -- 2 . 4 2 Zi i = 1 2 3 Xi . Zi = jXi X1 + X2 + X3 = 0 X1 /X3 gm rd Z1 Z3 Z2. c 2011 2/(9).

電子情報通信学会『知識の森』(http://www.ieice-hbkb.org/) 1 群-7編-4章 となるその狭い帯域内でのみ発振が可能である.二つの ...

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Transcription of 章発振回路 - ieice-hbkb.org

1 1 -7 -4 . 1 -- 7 . 4 . 2011 10 .. 6 6-4 .. 4-1 . 4-2 4-3 .. c 2011 1/(9). 1 -7 -4 . 1 -- 7 -- 4 . 4 -- 1 . 2009 12 . 4 -- 1 -- 1 .. 4 1 . Ecut . 0 . V2 /V1 T (j2 f ) = V2 /V1 V1 . V2 . f VA f V1 = VA f cos (2 f t) . V2 = |T (j2 f )|VA f cos (2 f t + T (j2 f )) f0 . |T (j2 f0 )| = 1 T (j2 f0 ) = 0 V2 = VA f cos (2 f0 t) . f = f0 T (j2 f ) 1 0 Ecut f0 . Ecut Ecut . Vout = VA f cos (2 f0 t) T (j2 f ) |T (j2 f0 )| 1. T (j2 f0 ) = 0 .. 1 . 4 1 . 4 -- 1 -- 2 . 4 2 Zi i = 1 2 3 Xi . Zi = jXi X1 + X2 + X3 = 0 X1 /X3 gm rd Z1 Z3 Z2. c 2011 2/(9).

2 1 -7 -4 . Z1 Z3 Z2 .. 4 2 . 4 -- 1 -- 3 . 4 3 BPF . T (j2 f ) = AT BPF (j2 f ). T BPF (j2 f ) BPF BPF f0 . A = 1/T BPF (j2 f0 ) T (j2 f0 ) = 1 . f = f0 . 4 3 . 4 -- 1 -- 4 . 4 4 T = AZ2 /(Z1 + Z2 ) 1. Z2 Zeq . Zeq = Z1 /(1 A) . 0 A = (1 + )(1 + Z1 /Z2 ) . c 2011 3/(9). 1 -7 -4 . Z1 = Z2 = A/(1 + ) 1 1/Zeq = (1 + (A )/((1 + ) ))/Z2 . = 0 . Z2 |Zeq | = |Z2 | .. 0 .. 4 4 . c 2011 4/(9). 1 -7 -4 . 1 -- 7 -- 4 . 4 -- 2 . 2009 12 . 4 -- 2 -- 1 . 4 2 rd MOSFET . MOSFET1 4 5 (a) . (b) (c) 4 2 Na Nb Nc n . p MOSFET 2 (a). (d) CMOS NOT.

3 NOT .. (a) (b). (c) (d). 4 5 . 4 -- 2 -- 2 .. Xq .. c 2011 5/(9). 1 -7 -4 .. 4 6 4 5(d) . MOSFET . R1 MOSFET . R2 .. 4 6 . 4 -- 2 -- 3 . BPF 4 7 MOSFET . gm rds .. gm rds n 1/(2 LC) . 4 7 . c 2011 6/(9). 1 -7 -4 . 4 -- 2 -- 4 LC . 0 .. 4 8 .. 4 8 LC . n MOSFET . 2/gm . gm MOSFET . 2/gm .. MOSFET . c 2011 7/(9). 1 -7 -4 . 1 -- 7 -- 4 . 4 -- 3 . 2009 12 .. 4 9 . MHz Rb /Ra R1 /R2 + C2 /C1 .. 1/(2 C1 C2 R1 R2 ) . Rb /Ra 4 10 . Ra . FET FET . 4 9 . Ra Vout Vctrl 4 10 . 2 . c 2011 8/(9). 1 -7 -4 . 4 11 a 1 . a . 4 11 .. 1) , , , , , , 2006.

4 C 2011 9/(9).


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