IRF1404 - Semiconductor & System Solutions

1 PD-91896F. IRF1404 . HEXFET Power MOSFET. l Advanced Process Technology l Ultra Low On-Resistance D. l Dynamic dv/dt Rating VDSS = 40V. l 175 C Operating Temperature l Fast Switching RDS(on) = . l Fully Avalanche Rated G. l Automotive Qualified (Q101). ID = 202A . S. Description Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications including automotive.

2 The TO-220 package is universally preferred for all automotive-commercial-industrial applications at power TO-220AB. dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220. contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25 C Continuous Drain Current, VGS @ 10V 202 . ID @ TC = 100 C Continuous Drain Current, VGS @ 10V 143 A. IDM Pulsed Drain Current 808. PD @TC = 25 C Power Dissipation 333 W. Linear Derating Factor W/ C. VGS Gate-to-Source Voltage 20 V. EAS Single Pulse Avalanche Energy 620 mJ.

3 IAR Avalanche Current See , 12b, 15, 16 A. EAR Repetitive Avalanche Energy mJ. dv/dt Peak Diode Recovery dv/dt V/ns TJ Operating Junction and -55 to + 175. TSTG Storage Temperature Range -55 to + 175 C. Soldering Temperature, for 10 seconds 300 ( from case ). Mounting Torque, 6-32 or M3 screw 10 lbf in ( m). Thermal Resistance Parameter Typ. Max. Units R JC Junction-to-Case R CS Case-to-Sink, Flat, Greased Surface C/W. R JA Junction-to-Ambient 62. 1. 10/10/03. IRF1404 . Electrical Characteristics @ TJ = 25 C (unless otherwise specified). Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 40 V VGS = 0V, ID = 250 A.

4 V(BR)DSS/ TJ Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, ID = 1mA. RDS(on) Static Drain-to-Source On-Resistance VGS = 10V, ID = 121A . VGS(th) Gate Threshold Voltage V VDS = 10V, ID = 250 A. gfs Forward Transconductance 76 S VDS = 25V, ID = 121A. 20 VDS = 40V, VGS = 0V. IDSS Drain-to-Source Leakage Current A. 250 VDS = 32V, VGS = 0V, TJ = 150 C. Gate-to-Source Forward Leakage 200 VGS = 20V. IGSS nA. Gate-to-Source Reverse Leakage -200 VGS = -20V. Qg Total Gate Charge 131 196 ID = 121A. Qgs Gate-to-Source Charge 36 nC VDS = 32V. Qgd Gate-to-Drain ("Miller") Charge 37 56 VGS = 10V . td(on) Turn-On Delay Time 17 VDD = 20V.

5 Tr Rise Time 190 ID = 121A. ns td(off) Turn-Off Delay Time 46 RG = . tf Fall Time 33 RD = . Between lead, D. LD Internal Drain Inductance . 6mm ( ). nH. from package G. LS Internal Source Inductance . and center of die contact S. Ciss Input Capacitance 5669 VGS = 0V. Coss Output Capacitance 1659 pF VDS = 25V. Crss Reverse Transfer Capacitance 223 = , See Fig. 5. Coss Output Capacitance 6205 VGS = 0V, VDS = , = Coss Output Capacitance 1467 VGS = 0V, VDS = 32V, = Coss eff. Effective Output Capacitance 2249 VGS = 0V, VDS = 0V to 32V. Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol D.

6 202 . (Body Diode) showing the A. ISM Pulsed Source Current integral reverse G. 808. (Body Diode) p-n junction diode. S. VSD Diode Forward Voltage V TJ = 25 C, IS = 121A, VGS = 0V . trr Reverse Recovery Time 78 117 ns TJ = 25 C, IF = 121A. Qrr Reverse RecoveryCharge 163 245 nC di/dt = 100A/ s . ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD). Notes: Repetitive rating; pulse width limited by Pulse width 400 s; duty cycle 2%. max. junction temperature. (See fig. 11). Coss eff. is a fixed capacitance that gives the same charging time Starting TJ = 25 C, L = 85 H as Coss while VDS is rising from 0 to 80% VDSS.

7 RG = 25 , IAS = 121A. (See Figure 12). Calculated continuous current based on maximum allowable ISD 121A, di/dt 130A/ s, VDD V(BR)DSS, junction temperature. Package limitation current is 75A. TJ 175 C. 2 IRF1404 . 1000 VGS. 1000 VGS. TOP 15V TOP 15V. 10V 10V. I D , Drain-to-Source Current (A). I D , Drain-to-Source Current (A). BOTTOM 100 100. 10 10. 20 s PULSE WIDTH 20 s PULSE WIDTH. TJ = 25 C TJ = 175 C. 1 1. 1 10 100 1 10 100. VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V). Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 ID = 202A. RDS(on) , Drain-to-Source On Resistance I D , Drain-to-Source Current (A).

8 TJ = 25 C. TJ = 175 C. (Normalized). 100. V DS= 25V. 20 s PULSE WIDTH VGS = 10V. 10 4 5 6 7 8 9 10 11 12 -60 -40 -20 0 20 40 60 80 100 120 140 160 180. VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C). Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3. IRF1404 . 10000 20. VGS = 0V, f = 1 MHZ ID = 121A. V DS= 32V. Ciss = Cgs + Cgd, Cds SHORTED. VGS , Gate-to-Source Voltage (V). V DS= 20V. 8000 Crss = Cgd 16. Coss = Cds + Cgd C, Capacitance(pF). 6000 Ciss 12. 4000. Coss 8. 2000. 4. Crss 0. FOR TEST CIRCUIT. 1 10 100 SEE FIGURE 13. 0. 0 50 100 150 200. VDS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC).

9 Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000 10000. OPERATION IN THIS AREA LIMITED. BY RDS(on). ISD , Reverse Drain Current (A). TJ = 175 C. 100 1000. ID , Drain Current (A). 10us 10 100 100us TJ = 25 C. 1ms 1 10 10ms TC = 25 C. TJ = 175 C. V GS = 0 V Single Pulse 1. 1 10 100. VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V). Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 4 IRF1404 . 220 RD. VDS. 200 LIMITED BY PACKAGE. VGS. 180 RG. ID , Drain Current (A). 160 +. -V DD. 140. 10V. 120. Pulse Width 1 s Duty Factor %.

10 100. 80. Fig 10a. Switching Time Test Circuit 60. 40 VDS. 90%. 20. 0. 25 50 75 100 125 150 175. TC , Case Temperature ( C). 10%. VGS. Fig 9. Maximum Drain Current Vs. td(on) tr t d(off) tf Case Temperature Fig 10b. Switching Time Waveforms 1. Thermal Response (Z thJC ). D = SINGLE PULSE. (THERMAL RESPONSE) PDM. t1. t2. Notes: 1. Duty factor D = t 1 / t 2. 2. Peak TJ = P DM x Z thJC + TC. t1 , Rectangular Pulse Duration (sec). Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5. IRF1404 . 1500. EAS , Single Pulse Avalanche Energy (mJ). 15V. ID. TOP 49A. 101A. L DRIVER 1200 BOTTOM 121A. VDS.