Low-Jitter Precision CMOS Oscillator

1 2017 Microchip Technology 1 DSC1101/21 Features Low RMS Phase Jitter: <1 ps (typ.) High Stability: 10 ppm, 20 ppm, 25 ppm, 50 ppm Wide Temperature Range: - Automotive: 55 C to +125 C- Ext. Industrial: 40 C to +105 C- Industrial: 40 C to +85 C- Commercial: 20 C to +70 C High Supply Noise Rejection: 50 dBc Wide Freq. Range: MHz to 170 MHz Small Industry Standard Footprints- mm x mm, mm x mm, mm x mm, and mm x mm Excellent Shock and Vibration Immunity- Qualified to MIL-STD-883 High Reliability- 20x Better MTF than Quartz Oscillators Low Current Consumption Supply Range of to Standby and Output Enable Function Lead-Free and RoHS CompliantApplications Storage Area Networks- SATA, SAS, Fibre Channel Passive Optical Networks- EPON, 10G-EPON,V GPON, 10G-PON Ethernet- 1G, 10 GBASE-T/KR/LR/SR.

2 And FCoE HD/SD/SDI Video and Surveillance PCI Express Display PortGeneral DescriptionThe DSC1101 and DSC1121 series of highperformance oscillators utilize a proven silicon MEMS technology to provide excellent jitter and stability overa wide range of supply voltages and temperatures. Byeliminating the need for quartz or SAW technology,MEMS oscillators significantly enhance reliability andaccelerate product development, while meetingstringent clock performance criteria for a variety ofcommunications, storage, and networking has a standby feature that allows it tocompletely power-down when EN pin is pulled low;whereas for DSC1121, only the outputs are disabledwhen EN is low.

3 Both oscillators are available inindustry standard packages, including the mm x mm, and are drop-in replacements forstandard 4-pin CMOS quartz crystal Block DiagramLow-Jitter Precision CMOS OscillatorDSC1101/21DS20005613B-page 2 2017 Microchip Technology CHARACTERISTICSA bsolute Maximum Ratings Input Voltage, to VDD + Voltage .. to + Protection On All Pins .. 4000V HBM, 1500V CDM (max.) Notice: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the is a stress rating only and functional operation of the device at those or any other conditions above those indicatedin the operational sections of this specification is not intended.

4 Exposure to maximum rating conditions for extendedperiods may affect device :1000+ years of data retention on internal 1-1:DC CHARACTERISTICSE lectrical Voltage (Note 1) Supply CurrentIDD , EN pin low, output is disabled 2022 DSC1121, EN pin low, output is disabled 3135 Output enabled, CL = 15 pF, F0 = 100 MHzFrequency Stability(Including frequency variations due to initial tolerance, temp. and power supply voltage.) f 10ppmExt Comm. & Ind. only 20 All temp ranges 25 All temp ranges 50 All temp rangesAging f 5ppm1 year @ 25 CStartup Time (Note 2)tSU 5msT = 25 CInput Logic Levels Input Logic High Input Logic VDD V VIL VDDO utput Disable Time (Note 3)tDS 5 ns Output Enable TimetEN 5msDSC1101 20nsDSC1121 Enable Pull-up Resistor (Note 4) 40 k Pull-up Resistor ExistCMOS OutputOutput Logic Levels Output Logic High Output Logic VDD VI = 6 mAVOL VDDNote 1:Pin 6 VDD should be filtered with F.

5 TSU is time to 100 ppm of output frequency after VDD is applied and outputs are :Output Waveform and Test Circuit figures define the :Output is enabled if pad is floated or not connected. 2017 Microchip Technology 3 DSC1101/21 Output Transition Time Rise TimeFall TimetR to 80%CL = 15 pFtF 170 MHzCL = 15 pF, 20 C to +70 C and 40 C to +85 170CL = 15 pF, 40 C to +105 C and 55 C to +125 COutput Duty CycleSYM45 55% Period JitterJPER 3 psRMSFOUT = 125 MHzIntegrated Phase NoiseJPH psRMS200 kHz to 20 MHz @ 125 MHz 100 kHz to 20 MHz @ 125 MHz kHz to 20 MHz @ 125 MHzTABLE 1-1:DC CHARACTERISTICS (CONTINUED)Electrical 1:Pin 6 VDD should be filtered with F.

6 TSU is time to 100 ppm of output frequency after VDD is applied and outputs are :Output Waveform and Test Circuit figures define the :Output is enabled if pad is floated or not 4 2017 Microchip Technology SPECIFICATIONS (Note 1) RangesOperating Temperature Range (T)TA 20 +70 COrdering Option ETA 40 +85 COrdering Option ITA 40 +105 COrdering Option LTA 55 +125 COrdering Option MJunction Operating Temperature TJ +150 C Storage Temperature RangeTA 40 +150 C Soldering Temperature RangeTS +260 C40 sec. maxNote 1:The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction to air ( , TA, TJ, JA).

7 Exceeding the maximum allowable power dissipation will cause the device operating junction temperature to exceed the maximum +125 C rating. Sustained junction temperatures above +125 C can impact the device reliability. 2017 Microchip Technology 5 DSC1101 PERFORMANCE CURVESFIGURE 2-1:Phase Jitter (Integrated Phase Noise). FIGURE 2-2:Power Supply Rejection :The graphs and tables provided following this note are a statistical summary based on a limited number ofsamples and are provided for informational purposes only. The performance characteristics listed hereinare not tested or guaranteed.

8 In some graphs or tables, the data presented may be outside the specifiedoperating range ( , outside specified power supply range) and therefore outside the warranted 6 2017 Microchip Technology DESCRIPTIONSThe descriptions of the pins are listed in Table 3-1. Pin order and descriptions apply across all package 3-1:PIN FUNCTION TABLEPin Number7x5 w/ PadPin Number7x5 w/o PadPin not not PADTie to 3-2:OUTPUT ENABLE MODESEN PinDSC1101 DSC1121 HighOutput ActiveOutput ActiveNCOutput ActiveOutput ActiveLowStandbyOutput Disabled 2017 Microchip Technology 7 DSC1101 WAVEFORMFIGURE 4-1:DSC1101/21 Output VOL VIL 1/fo OUTPUTENABLEtDA tEN tF tR VIH DSC1101/21DS20005613B-page 8 2017 Microchip Technology TERMINATION SCHEMEFIGURE 5-1.

9 Typical Termination Scheme for DSC1101/21. 2017 Microchip Technology 9 DSC1101 LAYOUT (RECOMMENDED)FIGURE 6-1:DSC1101/21 Recommended Board to GND layerVia to GND layerSupply bypass capacitorDSC1101/21DS20005613B-page 10 2017 Microchip Technology REFLOW PROFILEMSL 1 @ 260 C refer to JSTD-020 CRamp-Up Rate (200 C to Peak Temp)3 C/Sec. Time 150 C to 200 C60-180 Maintained Above 217 C60-150 Temperature255-260 CTime within 5 C of Actual Peak 20-40 Rate6 C/Sec. 25 C to Peak Temperature8 minute Max. 2017 Microchip Technology 11 DSC1101 Marking InformationExample6-Pin CDFN/VDFN*XXXXXXX0 SSSDCPYYWW07500000421 DCP1723 code, customer-specific information, or frequency in MHz without printed decimal pointYYear code (last digit of calendar year)YYYear code (last 2 digits of calendar year)WWWeek code (week of January 1 is week 01 )SSSA lphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn)*This package is Pb-free.

10 The Pb-free JEDEC designator ( )can be found on the outer packaging for this package. , , Pin one index is identified by a dot, delta up, or delta down (triangleNote:In the event the full Microchip part number cannot be marked on one line, it willbe carried over to the next line, thus limiting the number of availablecharacters for customer-specific information. Package may or may not includethe corporate (_) and/or Overbar ( ) symbol may not be to 12 2017 Microchip Technology VDFN mm x mm Package Outline and Recommended Land Pattern (DATUM B)(DATUM A)CSEATINGPLANE1N2 XTOP VIEWSIDE VIEWNOTE Technology Drawing C04-1005A Sheet 1 of 22X6 XFor the most current package drawings, please see the Microchip Packaging specification located :6-Lead Very Thin Dual Flatpack No-Leads (J7A) - mm Body [VDFN] VIEW12N2X b24X b15X L1L2e2 2017 Microchip Technology 13 DSC1101/21 REF.)