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Module 1 - Engineering Training Courses - IDC

modern Insulated Gate Bipolar Transistor (IGBT). These devices have near ideal characteristics for high voltage (> 100V) medium frequency (< 20 kHZ) applications. This device along with the MOSFET (at low voltage high frequency applications) have the potential to replace the BJT

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  Gate, Transistor, Insulated, Bipolar, Insulated gate bipolar transistor

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