富士パワーMOSFET - 富士電機

1 AN-079J 1 Fuji Power MOSFET Fuji Electric Co., Ltd. MOSFET PowerMOSFET Application Note 16-9 AN-079J 2 Fuji Power MOSFET Fuji Electric Co., Ltd. 1. 2. 3. 4. OA 5. 6.

2 7. 8. AN-079J 3 Fuji Power MOSFET Fuji Electric Co., Ltd. 1. 2. 3. 4. 5. 7. 6. AN-079J 4 Fuji Power MOSFET Fuji Electric Co., Ltd. MOSFET MOS - - MOSFET 1) 2) 3) SuperFAP SuperFAP 1) 2) 3) RonA SuperFAP MOSFET DrainSourceGateCGDD rainSourceGateCGDGateSourceDrainSourceGa teCGDD rainSourceGateCGDD rainGateSourceDrain SuperFAP AN-079J 5 Fuji Power MOSFET Fuji Electric Co.

3 , Ltd. MOSFET 1982 MOSFET 1986 MOSFET Power MOSFET PowerMOSFET 1980 1990 1995 2000 2010 MOSFET SIPMOS (F-0) F-I F-II FAP-II FAP-IIA FAP-IIS series SuperFAP-G series SuperFAP-E3 series super junction MOSFET F-I F-III FAP-III FAP-IIIA series FAP-IIIB series SuperFAP-G series Trench FT-1 series Trench FT-2 series AN-079J 6 Fuji Power MOSFET Fuji Electric Co., Ltd. MOSFET Code of Device type Fuji Electric MOSFET Code of Package Outline Current rating range ID[A] Code of Polarity N-Channnel MOSFET P-Channnel MOSFET Drain-Source Voltage rating range D-S VDSS[V] 1/10 Code of Series categoryCode PackageA TO-220FB D2-PackC T-Pack(S)D K-Pack(S)H TO-3P(Q)I T-Pack(L)K TO-3 PLL TFPP TO-220 ABR TO-3 PFU K-Pack(L)V TO-220F(SLS)W TO-247 CodeSeries GSuperFAP-GGF SuperFAP-G (FRED)T2 Trench MOSFET (2G)ESuperFAP-E3ES SuperFAP-E3SS1 SJ-MOSFET (1G)

4 Code of Device type N-Channnel MOSFET P-Channnel MOSFET JEITA JEITA registration number Avalanche Proof AN-079J 7 Fuji Power MOSFET Fuji Electric Co., Ltd. FMV06N60ES VDSS ID Tch=150 C ID pulse VGS IAR EAS EAR dv/dt - -di/dt - Ta = 2 5 C Tc=25 C PD MOSFET Tch MOSFET Tstg MOSFET VISO

5 M aximum Ratings at Tc=25 C (unle ss othe rwise specified)DescriptionSymbolCharacteristi csUnitRemarksVDS600 VVDSX600 VVGS=-30 VContinuous Drain CurrentID 6 APulsed Drain CurrentIDP 24 AGate-Source VoltageVGS 30 VRepetitive and Non-RepetitiveMaximum Avalanche CurrentNon-RepetitiveMaximum Avalanche EnergyRepetitiveMaximum Avalanche EnergyPeak Diode Recovery dV/dtdV/dtkV/ sPeak Diode Recovery -di/dt-di/dtA/ sTa=25 C37Tc=25 COperating and StorageTch150 CTemperature rangeTstg-55 to +150 CIsolation VoltageVISO2kVrmst=60sec,f=60 HzDrain-Source *4 Note * *3 IAR6 ANote * *5 Maximum Power *1 : Tch 150 C, See and *2 : Stating Tch=25 C, IAS= , L= , Vcc=60V, RG=50 , See and EAS limited by maximum channel temperature and avalanche current. See to 'Avalanche Energy' graph of page 9 *3 : Repetitive rating : Pulse width limited by maximum channel temperature.

6 See to the 'Transient Themal impeadance' graph of page 9 *4 : IF -ID, -di/dt=100A/ s, Vcc BVDSS, Tch 150 *5 : IF -ID, dv/dt= s, Vcc BVDSS, Tch 150 C. AN-079J 8 Fuji Power MOSFET Fuji Electric Co., Ltd. FMV06N60ES BVDSS VGS(th) IDSS 0V IGSS RDS(on) Tc = 2 5 C FMV06N60ES Characteristics at Tc=25 C (unle ss othe rwise specified)Static ABreakdown Voltage BVDSSVGS=0V600--VGate ThresholdID=250 AVoltage VGS(th)

7 VDS= Gate VoltageVDS=600 VVGS=0 VTch=25 C--25 Drain Current IDSSVDS=480 VVGS=0 VTch=125 C--250 Gate-SourceVGS= 30 VLeakage Current IGSSVDS=0V-10100nADrain-SourceID=3 AOn-State Resistance RDS(on)VGS= ADynamic gfsVDS= CapacitanceCissVDS=25V-9501425 Output CapacitanceCossVGS=0V-100150 Reverse Transferf= Crsstd(on)Vcc=300 VID= TimetrVGS=10 VRGS=27 (off)See and Timetf-1624 Total Gate ChargeQGVcc=300 VID= ChargeQGSVGS= ChargeQGDSee AN-079J 9 Fuji Power MOSFET Fuji Electric Co., Ltd. gfs Tr hFE Ciss Coss Crss td(on) 10% 90% tr 90% 10% td(off)

8 90% 10% tf 10% 90% QG MOSFET QGS QGD QSW FMV06N60ES QGSVDSVGSIDQSWVGS(th)VGS(on)QGDQGR everse CapabilityL= Tch=25 CIAVSee and ForwardIF=6 AOn-Voltage VSDVGS=0 VTch=25 RecoveryIF=6 AVGS=0 VTime trr-di/dt=100A/ s, Tch=25 sReverse RecoverySee CVGS(th) ID =QGD VDS ID =QSW AN-079J 10 Fuji Power MOSFET Fuji Electric Co., Ltd. IAV pn VSD VGS=0V Tch=25 C IF MOSFET trr FRED Qrr FMV06N60ES ( Rth(ch-c) ( ) Rth(ch-a) SMD to CaseRth(ch-c))

9 C/WChannel to AmbientRth(ch-a) C/W AN-079J 11 Fuji Power MOSFET Fuji Electric Co., Ltd. BVDSS BVDSS min. 10%/100 C VGS(th) MOSFET VGS VGS(th) -5mV -7mV/ C VGS ID MOSFET IDSS IDSS MOSFET P(IDSS)=VDS IDSS RDS(on) ID[A]VGS[V]Typical Transfer CharacteristicID=f(VGS).

10 80 s pulse test,VDS=25V,Tch=25 C VGS(th) VGS-ID ID=5A VGS= Threshold Voltage vs. TchVGS(th)=f(Tch):VDS=VGS,ID=250 AVGS(th) [V]Tch [ C] AN-079J 12 Fuji Power MOSFET Fuji Electric Co., Ltd. PD Tch=150 C Tc PD Tc PD PD Rth(ch-c) ( ) Rth(c-f) : Rth(f-a) : Ta : Tc : Rth(ch-c) ][)((max)WcchRthTcTchPD ][)()()((max)WafRthfcRthcchRthTaTchPD PD 02550751001251500510152025303540 Allowable Power DissipationPD=f(Tc)PD [W]Tc [ C]10-610-510-410-310-210-110010-310-210- 1100101 Maximum Transient Thermal ImpedanceZth(ch-c)=f(t):D=0 Zth(ch-c) [ C/W]t [sec] AN-079J 13 Fuji Power MOSFET Fuji Electric Co.