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MOSFETの破壊メカニズムについて - fscdn.rohm.com
MOSFETを安全に使用するには、このSOA範囲内で使用 する必要があり、この範囲を超えると破壊に至る可能性があります。このSOAの範囲外で動作させた場合の破壊をSOA破壊と呼んでいます。例 として、弊社SJ-MOS(Super Junction MOSFET) R6024KNXのSOAを図1に示します。 …
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Snubber circuit design methods - Rohm
fscdn.rohm.comis bulk capacitor placed in parallel with input HVdc-PGND. During the turn off of LS, surge voltage occurs in drain-source of LS by resonant phenomenon between L MAIN and parasitic capacitance of the MOSFET C OSS （ C DS + DG）. The maximum voltage V DS_SURGE is as shown in (1). Where V HVDC is the applied voltage on HVdc terminal and R OFF
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fscdn.rohm.comSnubber Circuit for Buck Converter IC AEK59-D1-0311-0 For example, when the input voltage VIN is 24 V and the switching frequency fSW is 1 MHz, 2 Ë Ì Ç » L680 pF H24 6 H1 MHz L0.39 W the generated consumption power of 0.39 W requires a 6432 size resistor (2512 in inches) with a rated power of 1 W.
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fscdn.rohm.comIntrinsic safety is a method for ensuring safety by removing the causes of danger. Functional safety, on the other hand, is a method of reducing risks to an acceptable level to ensure safety ... verification, prototyping, and evaluation are clarified, with reviews performed at each stage. It is also necessary to manage the documents created at
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fscdn.rohm.comprovided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products.
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