PD - 91339A IRF520N - redrok.com

1 IRF520 NHEXFET Power MOSFETPD - 91339 AFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefit, combined with the fast switching speed andruggedized device design that HEXFET PowerMOSFETs are well known for, provides the designerwith an extremely efficient and reliable device for usein a wide variety of TO-220 package is universally preferred for allcommercial-industrial applications at power dissipationlevels to approximately 50 watts.

2 The low thermalresistance and low package cost of the TO-220contribute to its wide acceptance throughout @ TC = 25 CContinuous Drain Current, VGS @ @ TC = 100 CContinuous Drain Current, VGS @ Drain Current 38PD @TC = 25 CPower Dissipation48 WLinear Derating CVGSGate-to-Source Voltage 20 VEASS ingle Pulse Avalanche Energy 91mJIARA valanche Current Avalanche Energy Diode Recovery dv/dt Junction and-55 to + 175 TSTGS torage Temperature RangeSoldering Temperature, for 10 seconds300 ( from case ) CMounting torque, 6-32 or M3 srew10 lbf in ( m)Absolute Maximum JCJunction-to-Case CSCase-to-Sink, Flat, Greased C/WR JAJunction-to-Ambient 62 Thermal ResistanceVDSS = 100 VRDS(on) = ID = Process TechnologylDynamic dv/dt Ratingl175 C Operating TemperaturelFast SwitchinglFully Avalanche RatedDescription5/13/98 IRF520N Units ConditionsISContinuous Source CurrentMOSFET symbol(Body Diode)

3 Showing theISMP ulsed Source Currentintegral reverse(Body Diode) p-n junction Forward Voltage = 25 C, IS = , VGS = 0V trrReverse Recovery Time 99150nsTJ = 25 C, IF = RecoveryCharge 390580nCdi/dt = 100A/ s Source-Drain Ratings and Units ConditionsV(BR)DSSD rain-to-Source Breakdown Voltage100 VVGS = 0V, ID = 250 A V(BR)DSS/ TJBreakdown Voltage Temp. Coefficient V/ CReference to 25 C, ID = 1mARDS(on)Static Drain-to-Source On-Resistance VGS = 10V, ID = VGS(th)Gate Threshold = VGS, ID = 250 AgfsForward SVDS = 50V, ID = 25 AVDS = 100V, VGS = 0V 250 VDS = 80V, VGS = 0V, TJ = 150 CGate-to-Source Forward Leakage 100 VGS = 20 VGate-to-Source Reverse Leakage -100nAVGS = -20 VQgTotal Gate Charge 25ID = Charge = 80 VQgdGate-to-Drain ("Miller") Charge 11 VGS = 10V, See Fig.

4 6 and 13 td(on)Turn-On Delay Time VDD = 50 VtrRise Time 23 ID = (off)Turn-Off Delay Time 32 RG = 22 tfFall Time 23 RD = , See Fig. 10 Between lead, 6mm ( )from packageand center of die contactCissInput Capacitance 330 VGS = 0 VCossOutput Capacitance 92 pFVDS = 25 VCrssReverse Transfer Capacitance 54 = , See Fig. 5nHElectrical Characteristics @ TJ = 25 C (unless otherwise specified)LDInternal Drain InductanceLSInternal Source Inductance Leakage Current Repetitive rating; pulse width limited by max.

5 Junction temperature. ( See fig. 11 ) ISD , di/dt 240A/ s, VDD V(BR)DSS, TJ 175 CNotes: VDD = 25V, starting TJ = 25 C, L = RG = 25 , IAS = (See Figure 12) Pulse width 300 s; duty cycle 2%. 1. Typical Output CharacteristicsFig 3. Typical Transfer CharacteristicsFig 4. Normalized On-ResistanceVs. TemperatureFig 2. Typical Output , Drain-to-Source Current (A)DV , D rain-to-Source Voltage (V)DS VGS TOP 15V 10V BOTTOM 20 s PULSE WIDTH T = 25 CCA , Drain-to-Source Current (A)DV , D rain-to-Source Voltage (V)

6 DS VGS TOP 15V 10V BOTTOM 20 s PULSE W IDTH T = 175 CCA11010045678910T = 25 CJGSV , Gate-to-Source Voltage (V)DI , D rain-to-Source C urrent (A) V = 50V 20 s PULSE W IDTH DST = 175 -20020406080100 120 140 160 180JT , Junction Tem perature ( C)R , D rain-to-S ource O n R esistanceDS(on)(N o rm alize d) V = 10V GSA I = ADIRF520 NFig 7.

7 Typical Source-Drain DiodeForward VoltageFig 5. Typical Capacitance VoltageFig 8. Maximum Safe Operating AreaFig 6. Typical Gate Charge Voltage0100200300400500600110100C, Capacitance (pF)DSV , D rain-to -Source Voltage (V)AV = 0V , f = 1M H zC = C + C , C SH OR TE DC = CC = C + CGSis s g s g d d srs s g doss ds gdC issC ossC rss0481216200510152025Q , Total G ate C harge (nC)GV , G ate-to-Source Voltage (V)

8 GS V = 80V V = 50V V = 20 VDSDSDSA FOR TEST CIRCUIT S EE FIGUR E 13I = = 25 CJV = 0V GSV , Source-to-Drain Voltage (V)I , Reverse D rain C urrent (A)SDSDAT = 175 , D rain-to-Source Voltage (V)DSI , Drain Current (A) O P E R A T IO N IN T H IS A R E A LIM IT E D BY RDDS(on)10 s100 s1m s10msA T = 25 C T = 175 C Single P u ls eCJIRF520 NFig 9. Maximum Drain Current TemperatureFig 10a. Switching Time Test CircuitVDS90%10%VGStd(on)trtd(off)tfVDSP ulse Width 1 sDuty Factor %Fig 10b.

9 Switching Time 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case+ 1 :1. Duty factor D =t / t2. Peak T=Px Z+ T12 JDMthJCCPttDM12t , Rectangular Pulse Duration (sec)Thermal Response(Z ) = PULSE(THERMAL RESPONSE) , Case Temperature( C)I , Drain Current (A) CDIRF520 NFig 12a. Unclamped Inductive Test RG+-tpVDSIASVDDV(BR)DSS10 VFig 12b. Unclamped Inductive F50K .2 F12 VCurrent RegulatorSame Type as Sampling Resistors+-Fig 13b. Gate Charge Test CircuitQGQGSQGDVGC harge10 VFig 13a.

10 Basic Gate Charge WaveformFig 12c. Maximum Avalanche EnergyVs. Drain Current04080120160200255075100125150175J E , Single Pulse Avalanche Energy (m J)ASAS tarting T , Junction Temperature ( C) V = 25V ITO P Recoverydv/dtRipple 5%Body Diode Forward DropRe-AppliedVoltageReverseRecoveryCurr entBody Diode ForwardCurrentVGS=10 VVDDISDD river Gate VDSW aveformInductor CurentD = P. W .Period+-+++---Fig 14. For N-Channel HEXFETS* VGS = 5V for Logic Level DevicesPeak Diode Recovery dv/dt Test Circuit RGVDD dv/dt controlled by RG Driver same type as ISD controlled by Duty Factor "D" - Device Under Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer *IRF520 NPackage OutlineTO-220AB OutlineDimensions are shown in millimeters (inches)