Transcription of PD - 91339A IRF520N - redrok.com
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PD - 91339A IRF520N - redrok.com
IRF520 NHEXFET Power MOSFETPD - 91339 AFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefit, combined with the fast switching speed andruggedized device design that HEXFET PowerMOSFETs are well known for, provides the designerwith an extremely efficient and reliable device for usein a wide variety of TO-220 package is universally preferred for allcommercial-industrial applications at power dissipationlevels to approximately 50 watts.
IRF520N HEXFET® Power MOSFET PD - 91339A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
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