Power MOSFET - Vishay

1 IRFR9014, IRFU9014, SiHFR9014, Siliconix S16-0015-Rev. E, 18-Jan-161 Document Number: 91277 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT MOSFETFEATURES Dynamic dV/dt rating Repetitive avalanche rated Surface mount (IRFR9014, SiHFR9014) Straight lead (IRFU9014, SiHFU9014) Available in tape and reel P-channel Fast switching Material categorization: for definitions of compliance please see generation Power mosfets from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

2 The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to W are possible in typical surface mount See device Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b. VDD = - 25 V, starting TJ = 25 C, L = mH, Rg = 25 , IAS = - A (see fig. 12).c. ISD - A, dI/dt 90 A/ s, VDD VDS, TJ 150 mm from When mounted on 1" square PCB (FR-4 or G-10 material).PRODUCT SUMMARYVDS (V)-60 RDS(on) ( )VGS = -10 V max. (nC)12 Qgs (nC) (nC) MOSFETDPAK(TO-252)IPAK(TO-251)GDSSDGDA vailableORDERING INFORMATIONP ackageDPAK (TO-252)DPAK (TO-252)DPAK (TO-252)IPAK (TO-251)Lead (Pb)-free and Halogen-freeSiHFR9014-GE3 SiHFR9014 TRL-GE3 aSiHFR9014TR-GE3 aSiHFU9014-GE3 Lead (Pb)-freeIRFR9014 PbF IRFR9014 TRLPbF aIRFR9014 TRPbF aIRFU9014 PbFABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)

3 PARAMETER SYMBOLLIMITUNITD rain-Source VoltageVDS-60V Gate-Source VoltageVGS 20 Continuous Drain CurrentVGS at VTC = 25 C = 100 C Drain Current aIDM -20 Linear Derating C Linear Derating Factor (PCB mount) Pulse Avalanche Energy bEAS 140mJ Repetitive Avalanche Current aIAR Repetitive Avalanche Energy Maximum Power DissipationTC = 25 C PD25W Maximum Power Dissipation (PCB mount) eTA = 25 C Diode Recovery dV/dt cdV/dt Operating Junction and Storage Temperature RangeTJ, Tstg-55 to +150 C Soldering Recommendations (Peak temperature) dfor 10 s260 IRFR9014, IRFU9014, SiHFR9014, Siliconix S16-0015-Rev.

4 E, 18-Jan-162 Document Number: 91277 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT When mounted on 1" square PCB (FR-4 or G-10 material). Notesa. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b. Pulse width 300 s; duty cycle 2 %.THERMAL RESISTANCE RATINGSPARAMETER Junction-to-AmbientRthJA--110 C/WMaximum Junction-to-Ambient (PCB mount) aRthJA--50 Maximum Junction-to-Case (Drain) (TJ = 25 C, unless otherwise noted)PARAMETER SYMBOLTEST CONDITIONS Breakdown VoltageVDS VGS = 0 V, ID = - 250 A -60--V VDS Temperature Coefficient VDS/TJ Reference to 25 C, ID = -1 mA C Gate-Source Threshold Voltage VGS(th)

5 VDS = VGS, ID = -250 A Gate-Source Leakage IGSS VGS = 20 V-- 100nA Zero Gate Voltage Drain Current IDSS VDS = -60 V, VGS = 0 V ---100 A VDS = -48 V, VGS = 0 V, TJ = 125 C ---500 Drain-Source On-State Resistance RDS(on) VGS = -10 VID = A Forward Transconductance gfsVDS = -25 V, ID = A DynamicInput CapacitanceCiss VGS = 0 V, VDS = - 25 V, f = MHz, see fig. 5-270-pFOutput Capacitance Coss -170-Reverse Transfer Capacitance Crss -31-Total Gate Charge Qg VGS = - 10 V ID = A, VDS = -48 V, see fig.

6 6 and 13 b--12nC Gate-Source Charge Qgs ChargeQgd Delay Time td(on) VDD = -30 V, ID = A, Rg = 24 , RD = , see fig. 10 b-11-nsRise Timetr -63-Turn-Off Delay Time td(off) Time tf -31-Internal Drain Inductance LD Between lead, 6 mm ( ") from package and center of die contact c Internal Source Body Diode CharacteristicsContinuous Source-Drain Diode Current ISMOSFET symbolshowing the integral reverse p - n junction Diode Forward Current aISM---20 Body Diode VoltageVSDTJ = 25 C, IS = A, VGS = 0 V Diode Reverse Recovery TimetrrTJ = 25 C, IF = A, dI/dt = 100 A/ s b-80160nsBody Diode Reverse Recovery CForward Turn-On TimetonIntrinsic turn-on time is negligible (turn-on is dominated by LS and LD)DSGSDGIRFR9014, IRFU9014, SiHFR9014, Siliconix S16-0015-Rev.

7 E, 18-Jan-163 Document Number: 91277 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT CHARACTERISTICS (25 C, unless otherwise noted) Fig. 1 - Typical Output Characteristics, TC = 25 C Fig. 2 - Typical Output Characteristics, TC = 150 C Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. TemperatureIRFR9014, IRFU9014, SiHFR9014, Siliconix S16-0015-Rev. E, 18-Jan-164 Document Number: 91277 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig.

8 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating AreaIRFR9014, IRFU9014, SiHFR9014, Siliconix S16-0015-Rev. E, 18-Jan-165 Document Number: 91277 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-CasePulse width 1 sDuty factor % 10 V+-VDSVDDVGS10 %90 %VDStd(on)trtd(off)tfIRFR9014, IRFU9014, SiHFR9014, Siliconix S16-0015-Rev.

9 E, 18-Jan-166 Document Number: 91277 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test +-VDD- 10 VVar y tp to obtainrequired IASIASVDSVDDVDStpQGSQGDQGVGC harge- 10 3 F50 k 12 VCurrent regulatorCurrent sampling resistorsSame type as +-IRFR9014, IRFU9014, SiHFR9014, Siliconix S16-0015-Rev. E, 18-Jan-167 Document Number: 91277 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.

10 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig. 14 - For P-ChannelVishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see recoverydV/dtBody diode forward dropBody diode forwardcurrentDriver gate driveInductor currentD = +----+ ++Peak Diode Recovery dV/dt Test Circuit dV/dt controlled by Rg - device under layout considerations Low stray inductance Ground plane Low leakage inductancecurrent transformerRg Compliment N-Channel of for driverVDD ISD controlled by duty factor D NoteNotea.