Power MOSFET - Vishay Intertechnology

1 Document Number: 91291 B, 21-Mar-111 This datasheet is subject to change without PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT MOSFETIRFZ44, SiHFZ44 Vishay Siliconix FEATURES Dynamic dV/dt Rating 175 C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/ECDESCRIPTIONT hird generation Power mosfets from Vishay provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance TO-220AB package is universially preferred forcommercial-industrial applications at Power dissipationlevels to approximately 50 W.

2 The low thermal resistanceand low package cost of the TO-220AB contribute to itswide acceptance throughout the Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b. VDD = 25 V, starting TJ = 25 C, L = 44 H, Rg = 25 , IAS = 51 A (see fig. 12).c. ISD 51 A, dI/dt 250 A/ s, VDD VDS, TJ 175 mm from Current limited by the package, (die current = 51 A).PRODUCT SUMMARYVDS (V)60 RDS(on) ( )VGS = 10 V (Max.) (nC)67 Qgs (nC)18 Qgd (nC)25 ConfigurationSingleN- channel MOSFET GDSTO-220 ABGDSA vailableRoHS*COMPLIANTORDERING INFORMATIONP ackageTO-220 ABLead (Pb)-freeIRFZ44 PbFSiHFZ44-E3 SnPbIRFZ44 SiHFZ44 ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)PARAMETER SYMBOLLIMITUNITD rain-Source Voltage VDS60V Gate-Source VoltageVGS 20 Continuous Drain CurrenteVGS at 10 VTC = 25 C ID50 AContinuous Drain CurrentTC = 100 C 36 Pulsed Drain CurrentaIDM 200 Linear Derating C Single Pulse Avalanche EnergybEAS 100mJ Maximum Power DissipationTC = 25 C PD150W Peak Diode Recovery dV/dtcdV/dt Operating Junction and Storage Temperature RangeTJ, Tstg- 55 to + 175 C Soldering Recommendations (Peak Temperature)

3 Dfor 10 s300 Mounting Torque6-32 or M3 screw10lbf m* Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 912912S11-0517-Rev. B, 21-Mar-11 This datasheet is subject to change without PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT , SiHFZ44 Vishay Siliconix Notesa. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b. Pulse width 300 s; duty cycle 2 %.THERMAL RESISTANCE RATINGSPARAMETER Junction-to-AmbientRthJA-62 C/WCase-to-Sink, Flat, Greased Junction-to-Case (Drain) (TJ = 25 C, unless otherwise noted)PARAMETER SYMBOLTEST CONDITIONS Breakdown Voltage VDS VGS = 0 V, ID = 250 A 60--V VDS Temperature Coefficient VDS/TJ Reference to 25 C, ID = 1 mA C Gate-Source Threshold Voltage VGS(th)

4 VDS = VGS, ID = 250 A Gate-Source Leakage IGSS VGS = 20 V-- 100nA Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V --25 A VDS = 48 V, VGS = 0 V, TJ = 125 C --250 Drain-Source On-State Resistance RDS(on) VGS = 10 VID = 31 Forward Transconductance gfsVDS = 25 V, ID = 31 A15--S DynamicInput Capacitance Ciss VGS = 0 V, VDS = 25 V,f = MHz, see fig. 5 -1900-pFOutput Capacitance Coss -920-Reverse Transfer Capacitance Crss -170-Total Gate Charge Qg VGS = 10 V ID = 51 A, VDS = 48 V, see fig. 6 and 13b--67nC Gate-Source Charge Qgs --18 Gate-Drain ChargeQgd --25 Turn-On Delay Time td(on) VDD = 30 V, ID = 51 A, Rg = , RD = , see fig.

5 10b-14-nsRise Timetr -110-Turn-Off Delay Time td(off) -45-Fall Time tf -92-Internal Drain Inductance LD Between lead,6 mm ( ") from package and center of die contact Internal Source Body Diode CharacteristicsContinuous Source-Drain Diode Current ISMOSFET symbolshowing the integral reversep - n junction diode--50 APulsed Diode Forward CurrentaISM--200 Body Diode VoltageVSDTJ = 25 C, IS = 51 A, VGS = 0 Diode Reverse Recovery TimetrrTJ = 25 C, IF = 51 A, dI/dt = 100 A/ s-120180nsBody Diode Reverse Recovery Turn-On TimetonIntrinsic turn-on time is negligible (turn-on is dominated by LS and LD)DSGSDG Document Number.

6 91291 B, 21-Mar-113 This datasheet is subject to change without PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT , SiHFZ44 Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)Fig. 1 Typical Output Characteristics, TC = 25 CFig. 2 - Typical Output Characteristics, TC = 175 CFig. 3 - Typical Transfer CharacteristicsFig. 4 - Normalized On-Resistance vs. Temperature Document Number: 912914S11-0517-Rev. B, 21-Mar-11 This datasheet is subject to change without PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT , SiHFZ44 Vishay Siliconix Fig.

7 5 - Typical Capacitance vs. Drain-to-Source VoltageFig. 6 - Typical Gate Charge vs. Gate-to-Source VoltageFig. 7 - Typical Source-Drain Diode Forward VoltageFig. 8 - Maximum Safe Operating Area Document Number: 91291 B, 21-Mar-115 This datasheet is subject to change without PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT , SiHFZ44 Vishay Siliconix Fig. 9 - Maximum Drain Current vs. Case TemperatureFig. 10a - Switching Time Test CircuitFig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-CaseFig. 12a - Unclamped Inductive Test CircuitFig. 12b - Unclamped Inductive WaveformsPulse width 1 sDuty factor % V+-VDSVDDVDS90 %10 %VGStd(on)trtd(off) +-VDD10 VVar y tp to obtainrequired IASIASVDSVDDVDStp Document Number: 912916S11-0517-Rev.

8 B, 21-Mar-11 This datasheet is subject to change without PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT , SiHFZ44 Vishay Siliconix Fig. 12c - Maximum Avalanche Energy vs. Drain CurrentFig. 13a - Basic Gate Charge WaveformFig. 13b - Gate Charge TestQGSQGDQGVGC harge10 F50 k 12 VCurrent regulatorCurrent sampling resistorsSame type as +- Document Number: 91291 B, 21-Mar-117 This datasheet is subject to change without PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT , SiHFZ44 Vishay Siliconix Fig. 14 - For N-ChannelVishay Siliconix maintains worldwide manufacturing capability.

9 Products may be manufactured at one of several qualified locations. Reliability data for SiliconTechnology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see recoverydV/dtRipple 5 %Body diode forward dropRe-appliedvoltageReverserecoverycurr entBody diode forwardcurrentVGS = 10 Va ISDD river gate lSD VDS waveformInductor currentD = +-+++---Peak Diode Recovery dV/dt Test CircuitVDD dV/dt controlled by Rg Driver same type as ISD controlled by duty factor D - device under layout considerations Low stray inductance Ground plane Low leakage inductancecurrent transformerRgNotea.

10 VGS = 5 V for logic level devicesVDDP ackage Siliconix Revison: 14-Dec-151 Document Number: 66542 For technical questions, contact: DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT M* = inches to inches (dimension includingprotrusion), heatsink hole for HVMM*321LL(1)DH(1)Q PAFJ(1)b(1)e(1) (1) (1) (1) (1) (1) : X15-0364-Rev. C, 14-Dec-15 DWG: 6031 Package PictureASEXi anLegal Disclaimer Revision: 09-Jul-20211 Document Number: 91000 Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology , Inc.