Precision Micropower Shunt Voltage Reference

1 2017 Microchip Technology 1LM4040/LM4041 Features Small SOT-23 Package No Output Capacitor Required Tolerates Capacitive Loads Fixed Reverse-Breakdown Voltages of , , , and Adjustable Reverse-Breakdown VersionApplications Battery-Powered Equipment Data Acquisition Systems Instrumentation Process Control Energy Management Product Testing Automotive Electronics Precision Audio ComponentsGeneral DescriptionIdeal for space critical applications, the LM4040 andLM4041 Precision Voltage references are available inthe subminiature SOT-23 surface-mount LM4040 is available in fixed reverse-breakdownvoltages of , , and The LM4041is available with a fixed or an adjustablereverse-breakdown minimum operating current ranges from 60 A forthe to 74 A for the LM4040versions have a maximum operating current of 15 versions have a maximum operating current of12 LM4040 and LM4041 have bandgap referencetemperature drift curvature correction and low dynamicimpedance, ensuring stable reverse-breakdownvoltage accuracy over a wide range of operatingtemperatures and Types1NC+-32LM4040/LM4041 (FIXED VERSION)3-Pin SOT-231-FB+32LM4041 (ADJUSTABLE VERSION)

2 3-Pin SOT-23 Precision Micropower Shunt Voltage ReferenceLM4040/LM4041DS20005757A-page 2 2017 Microchip Technology Application DiagramsFunctional Block DiagramsVSRSVRIQ + ILIQILLM4040 VOLM4040/LM4041 Fixed Shunt Regulator ApplicationVSLM4041 AdjustableR1R2 RSVOVO = (R2/R1 + 1)LM4041 Adjustable Shunt Regulator Application+LM4040/LM4041 Fixed+FBVREFLM4041 Adjustable 2017 Microchip Technology 3LM4040 CHARACTERISTICSA bsolute Maximum Ratings Reverse 20 mAForward Current .. 10 mAMaximum Output Voltage (LM4041-ADJ).. 15 VPower Dissipation (TA = +25 C; Note 1) .. 306 mWESD Susceptibility (HBM; Note 2)..2kVESD Susceptibility (MM; Note 2).. 200 VOperating Ratings Reverse Current ( ) .. 60 A to 15 mAReverse Current ( ) .. 68 A to 15 mAReverse Current ( ) .. 74 A to 15 mAReverse Current ( ) .. 60 A to 12 mAReverse Current (LM4040-ADJ).

3 60 A to 12 mAOutput Voltage Range (LM4041-ADJ) .. to 10V Notice: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the is a stress rating only and functional operation of the device at those or any other conditions above those indicatedin the operational sections of this specification is not intended. Exposure to maximum rating conditions for extendedperiods may affect device reliability. Notice: The device is not guaranteed to function outside its operating 1:The maximum power dissipation must be derated at elevated temperatures and is dictated by TJMAX (max-imum junction temperature), JA (junction-to-ambient thermal resistance), and TA (ambient temperature).The maximum allowable power dissipation at any temperature is PDMAX = (TJMAX TA)/ JA or the numbergiven in the Absolute Maximum Ratings, whichever is lower.

4 For the LM4040 and LM4041, TJMAX = +125 Cand the typical thermal resistance, when board-mounted, is +326 C/W for the SOT-23 :Devices are ESD sensitive. Handling precautions are recommended. Human body model, k in serieswith 100 pF. The machine model is a 200 pF capacitor discharged directly into each 4 2017 Microchip Technology ELECTRICAL CHARACTERISTICS (Note 1)TA = Operating Temperature Range, TA = TJ = 40 C to +85 C, unless VoltageVR VIR = 100 A, TA = +25 CReverse-Breakdown Voltage Tolerance (Note 2) 12mVIR = 100 A, TA = +25 C 29mVIR = 100 AMinimum Operating CurrentIRMIN 4560 ATA = +25 C 65 Average Reverse-Breakdown Voltage Temperature Coefficient VR/ T 20 ppm/ C IR = 10 mA, TA = +25 C 15 100IR = 1 mA 15 IR = 100 A, TA = +25 CReverse-Breakdown Voltage Change with Operating Current Change VR/ IR IR 1mA, TA = +25 C IR 1mA IR 15 mA, TA = +25 C IR 15 mAReverse Dynamic ImpedanceZR IR = 1 mA, f = 120 Hz, IAC = IR, TA = +25 CWideband NoiseeN 35 VRMSIR = 100 A, TA = +25 C,10 Hz f 10 kHzReverse-Breakdown Voltage Long-Term Stability VR 120 ppmt = 1000 hrs.

5 , TA = +25 C C, IR = 100 ALM4040 DReverse-Breakdown VoltageVR VIR = 100 A, TA = +25 CReverse-Breakdown Voltage Tolerance (Note 2) 25mVIR = 100 A, TA = +25 C 49mVIR = 100 AMinimum Operating CurrentIRMIN 4565 ATA = +25 C 70 Average Reverse-Breakdown Voltage Temperature Coefficient VR/ T 20 ppm/ C IR = 10 mA, TA = +25 C 15 150IR = 1 mA 15 IR = 100 A, TA = +25 CNote 1:Specification for packaged product :The boldface (overtemperature) limit for Reverse-Breakdown Voltage Tolerance is defined as the room temperature Reverse-Breakdown Voltage Tolerance [( VR/ T)(65 C)(VR)]. VR/ T is the VR tempera-ture coefficient, 65 C is the temperature range from 40 C to the Reference point of 25 C, and VR is the reverse-breakdown Voltage . The total overtemperature tolerance for the different grades follows: a. C-grade: = 100 ppm/ C 65 C b.

6 D-grade: = 150 ppm/ C 65 CExample: The C-grade has an overtemperature Reverse-Breakdown Voltage tolerance of = 29 mV. 2017 Microchip Technology 5LM4040/LM4041 Reverse-Breakdown Voltage Change with Operating Current Change VR/ IR IR 1mA, TA = +25 C IR 1mA IR 15 mA, TA = +25 C mA IR 15 mAReverse Dynamic ImpedanceZR IR = 1 mA, f = 120 Hz, IAC = IR, TA = +25 CWideband NoiseeN 35 VRMSIR = 100 A, 10 Hz f 10 kHzReverse-Breakdown Voltage Long-Term Stability VR 120 ppmt = 1000 hrs., TA = +25 C C, IR = 100 ELECTRICAL CHARACTERISTICS (Note 1) (CONTINUED)TA = Operating Temperature Range, TA = TJ = 40 C to +85 C, unless 1:Specification for packaged product :The boldface (overtemperature) limit for Reverse-Breakdown Voltage Tolerance is defined as the room temperature Reverse-Breakdown Voltage Tolerance [( VR/ T)(65 C)(VR)].

7 VR/ T is the VR tempera-ture coefficient, 65 C is the temperature range from 40 C to the Reference point of 25 C, and VR is the reverse-breakdown Voltage . The total overtemperature tolerance for the different grades follows: a. C-grade: = 100 ppm/ C 65 C b. D-grade: = 150 ppm/ C 65 CExample: The C-grade has an overtemperature Reverse-Breakdown Voltage tolerance of = 29 6 2017 Microchip Technology ELECTRICAL CHARACTERISTICS (Note 1)TA = Operating Temperature Range, TA = TJ = 40 C to +85 C, unless VoltageVR VIR = 100 A, TA = +25 CReverse-Breakdown Voltage Tolerance (Note 2) 20mVIR = 100 A, TA = +25 C 47mVIR = 100 AMinimum Operating CurrentIRMIN 5068 ATA = +25 C 73 Average Reverse-Breakdown Voltage Temperature Coefficient VR/ T 30 ppm/ C IR = 10 mA, TA = +25 C 20 100IR = 1 mA 20 IR = 100 A, TA = +25 CReverse-Breakdown Voltage Change with Operating Current Change VR/ IR IR 1mA, TA = +25 C IR 1mA IR 15 mA, TA = +25 C mA IR 15 mAReverse Dynamic ImpedanceZR IR = 1 mA, f = 120 Hz, IAC = IR, TA = +25 CWideband NoiseeN 80 VRMSIR = 100 A, TA = +25 C,10 Hz f 10 kHzReverse-Breakdown Voltage Long-Term Stability VR 120 ppmt = 1000 hrs.

8 , TA = +25 C C, IR = 100 ALM4040 DReverse-Breakdown VoltageVR VIR = 100 A, TA = +25 CReverse-Breakdown Voltage Tolerance (Note 2) 41mVIR = 100 A, TA = +25 C 81mVIR = 100 AMinimum Operating CurrentIRMIN 5073 ATA = +25 C 78 Average Reverse-Breakdown Voltage Temperature Coefficient VR/ T 30 ppm/ C IR = 10 mA, TA = +25 C 20 150IR = 1 mA 20 IR = 100 A, TA = +25 CNote 1:Specification for packaged product :The boldface (overtemperature) limit for Reverse-Breakdown Voltage Tolerance is defined as the room temperature Reverse-Breakdown Voltage Tolerance [( VR/ T)(65 C)(VR)]. VR/ T is the VR tempera-ture coefficient, 65 C is the temperature range from 40 C to the Reference point of 25 C, and VR is the reverse-breakdown Voltage . The total overtemperature tolerance for the different grades follows: a. C-grade: = 100 ppm/ C 65 C b.

9 D-grade: = 150 ppm/ C 65 CExample: The C-grade has an overtemperature Reverse-Breakdown Voltage tolerance of = 29 mV. 2017 Microchip Technology 7LM4040/LM4041 Reverse-Breakdown Voltage Change with Operating Current Change VR/ IR IR 1mA, TA = +25 C IR 1mA IR 15 mA, TA = +25 C mA IR 15 mAReverse Dynamic ImpedanceZR IR = 1 mA, f = 120 Hz, IAC = IR, TA = +25 CWideband NoiseeN 80 VRMSIR = 100 A, TA = +25 C10 Hz f 10 kHzReverse-Breakdown Voltage Long-Term Stability VR 120 ppmt = 1000 hrs., TA = +25 C C, IR = 100 ELECTRICAL CHARACTERISTICS (Note 1) (CONTINUED)TA = Operating Temperature Range, TA = TJ = 40 C to +85 C, unless 1:Specification for packaged product :The boldface (overtemperature) limit for Reverse-Breakdown Voltage Tolerance is defined as the room temperature Reverse-Breakdown Voltage Tolerance [( VR/ T)(65 C)(VR)].

10 VR/ T is the VR tempera-ture coefficient, 65 C is the temperature range from 40 C to the Reference point of 25 C, and VR is the reverse-breakdown Voltage . The total overtemperature tolerance for the different grades follows: a. C-grade: = 100 ppm/ C 65 C b. D-grade: = 150 ppm/ C 65 CExample: The C-grade has an overtemperature Reverse-Breakdown Voltage tolerance of = 29 8 2017 Microchip Technology ELECTRICAL CHARACTERISTICS (Note 1)TA = Operating Temperature Range, TA = TJ = 40 C to +85 C, unless VoltageVR VIR = 100 A, TA = +25 CReverse-Breakdown Voltage Tolerance (Note 2) 25mVIR = 100 A, TA = +25 C 58mVIR = 100 AMinimum Operating CurrentIRMIN 5474 ATA = +25 C 80 Average Reverse-Breakdown Voltage Temperature Coefficient VR/ T 30 ppm/ C IR = 10 mA, TA = +25 C 20 100IR = 1 mA 20 IR = 100 A, TA = +25 CReverse-Breakdown Voltage Change with Operating Current Change VR/ IR IR 1mA, TA = +25 C IR 1mA IR 15 mA, TA = +25 C mA IR 15 mAReverse Dynamic ImpedanceZR IR = 1 mA, f = 120 Hz, IAC = IR, TA = +25 CWideband NoiseeN 80 VRMSIR = 100 A, TA = +25 C, 10 Hz f 10 kHzReverse-Breakdown Voltage Long-Term Stability VR 120 ppmt = 1000 hrs.