RF Power LDMOS Transistor - NXP

1 MRFX1K80H1RF Device DataNXP SemiconductorsRF Power LDMOS TransistorHigh Ruggedness N--ChannelEnhancement--Mode Lateral MOSFETThis high ruggedness device is designed for use in high VSWR industrial,medical, broadcast, aerospace and mobile radio applications. Its unmatchedinput and output design supports frequency use from to 400 PerformanceFrequency(MHz)Signal TypeVDD(V)Pout(W)Gps(dB) D(%)27(1)CW651800 (100 sec, 10% Duty Cycle)651800 108(2,3)CW601600 (100 sec, 10% Duty Cycle)651800 230 Doherty(3)DVB--T (8k OFDM)63250 (4)Pulse(100 sec, 20% Duty Cycle)651800 (12 sec, 10% Duty Cycle)631700 Mismatch/RuggednessFrequency(MHz)Signal TypeVSWRPin(W)TestVoltageResult230(4)Pul se(100 sec, 20%Duty Cycle)> 65.

2 1 at allPhase Angles14 Peak(3 dBOverdrive)65No DeviceDegradation1. Measured in 27 MHz reference circuit (page 6).2. Measured in 108 MHz broadband reference circuit (page 11).3. The values shown are the center band performance numbers across the indicatedfrequency Measured in 230 MHz production test fixture (page 17).Features Unmatched input and output allowing wide frequency range utilization Device can be used single--ended or in a push--pull configuration Qualified up to a maximum of 65 VDDoperation Characterized from 30 to 65 V for extended Power range High breakdown voltage for enhanced reliability Suitable for linear application with appropriate biasing Integrated ESD protection with greater negative gate--source voltage range for improved Class C operation Lower thermal resistance option in over--molded plastic package.

3 MRFX1K80N Included in NXP product longevity program with assured supply for a minimum of 15 years after launchTypical Applications Industrial, scientific, medical (ISM) Laser generation Plasma generation Particle accelerators MRI, RF ablation and skin treatment Industrial heating, welding and drying systems Radio and VHF TV broadcast Aerospace HF communications RadarDocument Number: MRFX1K80 HRev. 1, 09/2018 NXP SemiconductorsTechnical 400 MHz, 1800 W CW, 65 VWIDEBANDRF Power LDMOS TRANSISTORMRFX1K80 HNI--1230H--4S(Top View)Drain A31 Figure 1.

4 Pin Connections42 Drain BGate AGate BNote: The backside of the package is thesource terminal for the Transistor . 2017 2018 NXP Device DataNXP SemiconductorsMRFX1K80 HTable 1. Maximum RatingsRatingSymbolValueUnitDrain--Sourc e VoltageVDSS , +179 VdcGate--Source VoltageVGS , +10 VdcStorage Temperature RangeTstg 65to+150 CCase Operating Temperature RangeTC 40 to +150 COperating Junction Temperature Range(1,2)TJ 40 to +225 CTotal Device Dissipation @ TC=25 CDerate above 25 CTable 2. Thermal CharacteristicsCharacteristicSymbolValue (2,3)UnitThermal Resistance, Junction to CaseCW: Case Temperature 99 C, 1800 W CW, 65 Vdc, IDQ(A+B)= 150 mA, 98 MHzR C/WThermal Impedance, Junction to CasePulse: Case Temperature 65 C, 1800 W Peak, 100 sec Pulse Width, 20% Duty Cycle,65 Vdc, IDQ(A+B)= 100 mA, 230 MHzZ C/WTable 3.

5 ESD Protection CharacteristicsTest MethodologyClassHuman Body Model (per JESD22--A114)2, passes 2500 VCharge Device Model (per JESD22--C101)C3, passes 2000 VTable 4. Electrical Characteristics(TA=25 C unless otherwise noted)CharacteristicSymbolMinTypMaxUnitO ff Characteristics(4)Gate--Source Leakage Current(VGS=5 Vdc,VDS=0 Vdc)IGSS 1 AdcDrain--Source Breakdown Voltage(VGS=0 Vdc,ID= 100 mAdc)V(BR)DSS179193 VdcZero Gate Voltage Drain Leakage Current(VDS=65 Vdc,VGS=0 Vdc)IDSS 10 AdcZero Gate Voltage Drain Leakage Current(VDS= 179 Vdc, VGS=0 Vdc)IDSS 100mAdcOn CharacteristicsGate Threshold Voltage(4)(VDS=10 Vdc,ID= 740 Adc)VGS(th) Quiescent Voltage(VDD=65 Vdc,ID(A+B))

6 = 100 mAdc, Measured in Functional Test)VGS(Q) On--Voltage(4)(VGS=10 Vdc,ID= )VDS(on) VdcForward Transconductance(4)(VDS=10 Vdc,ID=43 Adc)gfs S1. Continuous use at maximum temperature will affect MTTF calculator available Refer to AN1955, Thermal Measurement Methodology of RF Power search for Each side of device measured separately.(continued)MRFX1K80H3RF Device DataNXP SemiconductorsTable 4. Electrical Characteristics(TA=25 C unless otherwise noted)(continued)CharacteristicSymbolMin TypMaxUnitDynamic Characteristics(1)Reverse Transfer Capacitance(VDS=65 Vdc 30 mV(rms)ac @ 1 MHz, VGS=0 Vdc)Crss pFOutput Capacitance(VDS=65 Vdc 30 mV(rms)ac @ 1 MHz, VGS=0 Vdc)Coss 203 pFInput Capacitance(VDS=65 Vdc,VGS=0 Vdc 30 mV(rms)ac @ 1 MHz)Ciss 760 pFFunctional Tests(In NXP Production Test Fixture, 50 ohm system) VDD=65 Vdc,IDQ(A+B)= 100 mA, Pout= 1800 W Peak (360 W Avg.

7 ,f = 230 MHz, 100 sec Pulse Width, 20% Duty CyclePower Efficiency %Input Return LossIRL 9dBTable 5. Load Mismatch/Ruggedness(In NXP Production Test Fixture, 50 ohm system) IDQ(A+B)= 100 mAFrequency(MHz)Signal TypeVSWRPin(W)Test Voltage, VDDR esult230 Pulse(100 sec, 20% Duty Cycle)> 65:1 at allPhase Angles14 W Peak(3 dB Overdrive)65No Device DegradationTable 6. Ordering InformationDeviceTape and Reel InformationPackageMRFX1K80HR5R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch ReelNI--1230H--4S1. Each side of device measured Device DataNXP SemiconductorsMRFX1K80 HTYPICAL CHARACTERISTICSNORMALIZED VGS(Q) 500 25255075 VDD= mA1500 mA500 mAIDQ(A+B)= 100 mA110002010 VDS, DRAIN--SOURCE VOLTAGE (VOLTS)Figure 2.

8 Capacitance versus Drain--Source VoltageC, CAPACITANCE (pF)10 CrssNote:Each side of device measured with 30 mV(rms)ac @ 1 MHzVGS=0 VdcFigure 3. Normalized VGSversus QuiescentCurrent and Case TemperatureTC, CASE TEMPERATURE ( C)100 IDQ(mA)Slope (mV/ C)50010001500 , JUNCTION TEMPERATURE ( C)Figure 4. MTTF versus Junction Temperature CWNote:MTTF value represents the total cumulative operating timeunder indicated test calculator available (HOURS)150108105170190 210230ID= AmpsVDD=65 VdcID= AmpsID= AmpsMRFX1K80H5RF Device DataNXP SemiconductorsLINEAR nH3 nH4pF18 VGSA753 196 pF4 pF890 pFGATE ADRAIN BGATE BDRAIN nH3 nH4pF18 VGSA753 196 pF4 pF890 pFVGSF igure 5.

9 Simple Linear Model for the MRFX1K80H6RF Device DataNXP SemiconductorsMRFX1K80H27 MHz REFERENCE CIRCUIT (73 mm 175 mm)Table 7. 27 MHz Performance(In NXP Reference Circuit, 50 ohm system)IDQ(A+B)= 200 mA, Pin=3W,CWFrequency(MHz)VDD(V)Pout(W)Gps( dB) D(%) Device DataNXP Semiconductors27 MHz REFERENCE CIRCUIT (73 mm 175 mm)Figure 6. MRFX1K80H Reference Circuit Component Layout 27 MHzC18C20R2C5Q1R1R3C13D1L1C1C2T1C15C16C8 C9C7C6L2C12C10C11R106R107R104R103C101R10 8C102R109C110C109C107C108R101C103 C104U101T2 Rev.

10 0Q2C19 Temperature Compensation DetailT2 Transformer DetailD101R105D94843C105 C106Q101C17 Temperature CompensationD50876 MRFX1K80 HMRF1K50 HMRFE6VP61K25HR102 Note: Component numbers C3, C4 and C14 are not Device DataNXP SemiconductorsMRFX1K80H27 MHz REFERENCE CIRCUIT (73 mm 175 mm)Table 8. MRFX1K80H Reference Circuit Component Designations and Values 27 MHzPartDescriptionPart NumberManufacturerC1, C17, C181000 pF Chip CapacitorATC100B102JT50 XTATCC2, C15, C1639 K pF Chip CapacitorATC200B393KT50 XTATCC5470 pF Chip CapacitorATC100C471JT2500 XTATCC6, F Chip CapacitorHMK432B7225KM-TTaiyo YudenC7, C9, C19, C20470 pF Chip CapacitorATC100B471JT200 XTATCC10, C1122 pF Chip CapacitorATC100B220JT500 XTATCC12470 F.