Transcription of Silicon PIN Photodiode - Vishay
1 BPV22NF, Semiconductors Rev. , 21-Feb-121 Document Number: 81509 For technical questions, contact: DOCUMENT IS subject TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE subject TO SPECIFIC DISCLAIMERS, SET FORTH AT PIN PhotodiodeDESCRIPTIONBPV22NF is a PIN Photodiode with high speed and highradiant sensitivity in a black, plastic package with side viewlens and daylight blocking filter. Filter bandwidth is matchedwith 870 nm to 950 nm IR emitters. The lens achieves 80 %of sensitivity improvement in comparison with flat has long leads, other specifications Package type: leaded Package form: side view Dimensions (in mm): x 5 x 6 Radiant sensitive area (in mm2): High radiant sensitivity Daylight blocking filter matched with 870 nm to950 nm emitters Fast response times Angle of half sensitivity.
2 = 60 Compliant to RoHS Directive 2011/65/EU and inaccordance to WEEE 2002/96/ECNote**Please see document Vishay Material Category Policy High speed detector for infrared radiation Infrared remote control and free air data transmissionsystems, in combination with TSFF xxxx series IRemittersNote Test condition see table Basic Characteristics Note MOQ: minimum order quantity94 8633 PRODUCT SUMMARYCOMPONENTIra ( A) (deg) (nm)BPV22NF85 60790 to 1050 BPV22 NFL85 60790 to 1050 ORDERING INFORMATIONORDERING CODEPACKAGINGREMARKSPACKAGE FORMBPV22 NFBulkMOQ: 4000 pcs, 4000 pcs/bulkSide viewBPV22 NFLBulkMOQ: 4000 pcs, 4000 pcs/bulkSide view, long leadsABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified)PARAMETERTEST CONDITIONSYMBOLVALUEUNITR everse voltageVR60 VPower dissipationTamb 25 CPV215mWJunction temperatureTj100 COperating temperature rangeTamb- 40 to + 100 CStorage temperature rangeTstg- 40 to + 100 CSoldering temperaturet 5 sTsd260 CThermal resistance junction/ambientConnected with Cu wire, mm2 RthJA350K/W BPV22NF, Semiconductors Rev.
3 , 21-Feb-122 Document Number: 81509 For technical questions, contact: DOCUMENT IS subject TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE subject TO SPECIFIC DISCLAIMERS, SET FORTH AT CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient TemperatureBASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)PARAMETERTEST voltageIF = 50 voltageIR = 100 A, E = 0V(BR)60 VReverse dark currentVR = 10 V, E = 0 Iro230nADiode capacitanceVR= 0 V, f = 1 MHz, E = 0CD70pFSerial resistanceVR= 12 V, f = 1 MHzRS400 Open circuit voltageEe = 1 mW/cm2, = 950 nmVo370mVTemperature coefficient of VoEe = 1 mW/cm2, = 950 nmTKVo- circuit currentEe = 1 mW/cm2, = 950 nmIk80 AReverse light currentEe = 1 mW/cm2, = 870 nm, VR = 5 VIra5585 ATemperature coefficient of IraEe = 1 mW/cm2, = 950 nm,VR = 10 spectral sensitivityVR = 5 V, = 870 nms( )
4 = 5 V, = 950 nms( ) of half sensitivity 60degWavelength of peak sensitivity p940nmRange of spectral bandwidth to 1050nmQuantum efficiency = 950 nm 90%Noise equivalent powerVR = 10 V, = 950 nmNEP4 x 10-14W/ HzDetectivityVR = 10 V, = 950 nmD*6 x 1012cm Hz/WRise timeVR = 10 V, RL = 1 k , = 820 nmtr100nsFall timeVR = 10 V, RL = 1 k , = 820 nmtf100nsCut-off frequencyVR = 12 V, RL = 1 k , = 870 nmfc4 MHzVR = 12 V, RL = 1 k , = 950 nmfc1 MHz20406080110100100010094 8403VR = 10 VTamb - Ambient Temperature ( C)Iro - Reverse Dark Current (nA) 8409VR=5V = 950 nm100806040200I - Relative Reverse Light CurrentT - Ambient Temperature ( C)ambra rel BPV22NF, Semiconductors Rev.
5 , 21-Feb-123 Document Number: 81509 For technical questions, contact: DOCUMENT IS subject TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE subject TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig. 3 - Reverse Light Current vs. Irradiance Fig. 4 - Reverse Light Current vs. Reverse Voltage Fig. 5 - Diode Capacitance vs. Reverse Voltage Fig. 6 - Relative Spectral Sensitivity vs. Wavelength Fig. 7 - Relative Radiant Sensitivity vs. Angular 8411I-Reverse Light Current ( A)raEe- Irradiance (mW/cm2)VR=5V = 84121 mW/cm2I-Reverse Light Current ( A) mW/cm2 = 950 nmVR-ReverseVoltage (V)020406080948407E = 0f = 1 MHzCD - Diode Capacitance (pF)VR - Reverse Voltage (V) 8426S( )rel - Relative Spectral - Wavelength (nm) 30 102040 50 60 70 80 - Angular DisplacementSrel - Relative Sensitivity BPV22NF, Semiconductors Rev.
6 , 21-Feb-124 Document Number: 81509 For technical questions, contact: DOCUMENT IS subject TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE subject TO SPECIFIC DISCLAIMERS, SET FORTH AT DIMENSIONS in millimeters: BPV22 NFPACKAGE DIMENSIONS in millimeters: BPV22 NFL95 11475specificationsaccording to DINtechnical drawingsDrawing-No.: : 2; not + + ( )5+ < + + (sphere)96 : to DINtechnical drawingsArea not planeR (sphere) ( )5 + + : 2; < Disclaimer Revision: 08-Feb-171 Document Number: 91000 Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE subject TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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