SM72295 Photovoltaic Full Bridge Driver datasheet …

1 HIALIALIBHIBLOBHSBHSALOAHOAHBAHBBHOBPGOO DPGNDAGNDSIBIOUTSOBSIAIINSOAVDDVCCBVCCAS M72295 OVSOVPPV+-VinVout+-R13C61uFR5500C31uFR75 00R8500R340kR440kR910kC2C75VC110 VoptionaloptionalBOUTBINC810 OCTOBER2010 REVISEDAPRIL2013SM72295 PhotovoltaicFullBridgeDriverCheckforSamp les:SM722951 FEATURESDESCRIPTIONTheSM72295is designedtodrive4 discreteN type2 RenewableEnergyGradeMOSFET s ina DualHalfBridgeMOSFETD riversprovide3 Aofpeakcurrentforfastefficientswitching providedby2 transconductanceamplifiers IndependentHighandLowDriverLogicInputswi thexternallyprogrammablegainandfiltering to ProgrammableOverVoltageProtectionvoltage comparatorisalsoincludedtoshutdownall SOIC-28 TypicalApplicationCircuit1 Pleasebeawarethatanimportantnoticeconcer ningavailability,standardwarranty,anduse in 2010 2013, OCTOBER2010 (RI).

2 Amplifiertransconductanceis 1 1 (RL).Gainis RL/RI,whereRIis theexternalresistorin ,9 LIA, ,8 HIA, (RL).Gainis RL/RI,whereRIis theexternalresistorin 1 (RI).Amplifiertransconductanceis 1 > lowwhenOVS> ,28 HSA, 2010 2013, OCTOBER2010 REVISEDAPRIL2013 PINDESCRIPTIONS(continued)PinNameDescrip tionApplicationInformation19,27 HOA,HighsidegatedriveroutputConnecttogat eofhighsideMOSFET witha ,26 HBA, ,25 VCCA, ,24 LOA,LowsidegatedriveroutputConnecttotheg ateofthelowsideMOSFET witha (1)(2)VCCA, , ,LIB,HIA,HIB, , + ,HOBHS + ,SOA,SIB, , ,HSB(3)-5to100 VHBA,HBB115 VPGOOD, , , CStorageTemperatueRange-55 C to+150 CESDR ating(4)HumanBodyModel2 kV(1) ,seetheElectricalCharacteristicstables.( 2)If Military/Aerospacespecifieddevicesarereq uired,pleasecontacttheTISalesOffice/Dist ributorsforavailabilityandspecifications .

3 (3)IntheapplicationtheHSnodesareclampedb ythebodydiodeoftheexternallowerN-MOSFET, thereforetheHSnodewillgenerallynotexceed ,in someapplications,boardresistanceandinduc tancemayresultin negativetransientsoccur, VCC= 10V,thenegativetransientsatHSmustnotexce ed 5V.(4)Thehumanbodymodelis a 100pFcapacitordischargedthrougha kVforallpinsexceptHB,HO& 2010 2013,TexasInstrumentsIncorporatedSubmitD ocumentationFeedback3 ProductFolderLinks:SM72295SM72295 SNVS688E OCTOBER2010 ,VCCB+8 Vto+14 VVDD+3 Vto7 VSI,SOcommonmodeVDD+1 Vto100 VHS(1)-1 Vto100 VHBA,HBBHS+7 VtoHS+14 VHSSlewRate<50V/nsJunctionTemperature-40 C to+125 C(1)IntheapplicationtheHSnodesareclamped bythebodydiodeoftheexternallowerN-MOSFET ,thereforetheHSnodewillgenerallynotexcee d ,in someapplications,boardresistanceandinduc tancemayresultin negativetransientsoccur, VCC= 10V,thenegativetransientsatHSmustnotexce ed (1)Specificationsin standardtypefaceareforTJ= 25 C,andthosein HO,VCC= 10V,VDD= 5V,HB-HS= 10V,OVS= SOB,SIB= AVCCQ uiescentCurrentICCA lloutputsoff500800 A(ICCA+ICCB)VCCO peratingCurrentICCOLOA& (ICCA+ICCB)

4 IHBHBA,HBBQ uiescentCurrentAlloutputsoff55200 AIHBOHBA,HBBO peratingCurrentHOA& HOBswitchingat200kHz7001000 AHBA& HBBtoVSSC urrent,IHBSHS= 100V,HB= AQuiescentHBAandHBBtoVSSC urrent,IHBSOf = 200kHz130 AOperatingPGOOD,OVBOUTPUTsVOLO utputLowRDS2550 RPUVDD pullupresistor5090k LI, ,HIPulldownResistance100200400k OVERVOLTAGESHUTDOWNVOVROVSR isingThresholdVDD-50mVVDDVDD+50mVVVOVHOV S thresholdHysteresis5%VDDIOVSOVS inputbiascurrentOVS< (1)MinandMaxlimitsare100%productionteste dat25 (SQC) (AOQL).4 SubmitDocumentationFeedbackCopyright 2010 2013, OCTOBER2010 REVISEDAPRIL2013 ElectricalCharacteristics(1)(continued)S pecificationsin standardtypefaceareforTJ= 25 C,andthosein HO,VCC= 10V,VDD= 5V,HB-HS= 10V,OVS= HOGATEDRIVERILO= LO-PGNDorHO-HSILO= VCC-LOorVCC-HOIOHLPeakPullupCurrentHO,LO = 12V3 AIOLLPeakPulldownCurrentHO,LO= 0V3 AtLPHLLOTurn-OffPropagationDelayLIFallin gtoLOFalling22nstLPLHLOTurn-OnPropagatio nDelayLIRisingtoLORising26nstHPHLHOTurn- OffPropagationDelayHIFallingtoHOFalling2 2nstHPLHLOTurn-OnPropagationDelayHIRisin gtoHORising26nsDelayMatching:LOon& HOtMON1nsoffDelayMatching.

5 LOoff& HOtMOFF1nsontRC, tFCEitherOutputRise/FallTimeCL= 1000pF8nsMinimumInputPulseWidththattPW50 nsChangestheOutputBootstrapDiodeTurn-Ono rtBSIF= 100mA/IR= 100mA37nsTurn-OffTimeCURRENTSENSEAMPLIFI ERRSI= RSO= 500,10mVsenseVOSO ffsetvoltage-22mVresistorvoltageGainis programmedwith5mVsenseresistorvoltageGai n5mVexternalresistors390mVRSI= RSO= 1000,RL= 75 KIOUT,IIN=(RL/RSI)* (SI-SO)Gainis RSO= 1000,RL= 75 KIOUT,IIN=(RL/RSI)* (SI-SO) RSO= 1000,RL= 75 KCURRENTSENSEBUFFERO ffsetvoltage(BIN-IIN),IIN= (BOUT-IOUT)OutputlowvoltageBOUT,BINIIN,I OUT= 0050mVOutputhighvoltageBOUT,BINIIN,IOUT= VDDVDD-100mVVDD-30mVVDDmVTHERMALRESISTAN CE JAJunctiontoAmbientSOIC-28(2)60 C/W(2)2 layerboardwith2 2010 2013,TexasInstrumentsIncorporatedSubmitD ocumentationFeedback5 ProductFolderLinks: SM72295 HIALIALIBHIBLOBHSBHSALOAHOAHBAHBBHOBDRIV ERUVLOLEVELSHIFTDRIVERVCCUVLODRIVERDRIVE RUVLO3 VVCCAVCCB3V3V3 VPGOODPGND3 VAGNDSIBIOUTSOBSIAIINSOAVDDCLAMP+_VDDCLA MPVDD +-OVPVDDVDD200kVDD+_+_+_BOUTBIN50k50kLEV ELSHIFTSM72295 SNVS688E OCTOBER2010 2010 2013, OCTOBER2010 2010 2013,TexasInstrumentsIncorporatedSubmitD ocumentationFeedback7 ProductFolderLinks:SM72295SM72295 SNVS688E OCTOBER2010 (continued) 2010 2013, FREQUENCY (kHz) (W)CL = 4400 pFCL = 0 pFCL = 1000 OCTOBER2010 (f),outputloadcapacitanceonLOandHO(CL), andsupplyvoltage(VDD) andcanberoughlycalculatedas.

6 PDGATES= 2 f CL VDD2(1)Therearesomeadditionallossesin , (LO+ HO)VCC= 12V, , (VIN) 2010 2013,TexasInstrumentsIncorporatedSubmitD ocumentationFeedback9 ProductFolderLinks:SM722951101001000 SWITCHING FREQUENCY (kHz)POWER (W) = 4400 pFCL = 0 pFSM72295 SNVS688E OCTOBER2010 ESLcapacitorsmustbeconnectedclosetotheIC , ,a lowESRelectrolyticcapacitormustbeconnect edbetweenMOSFET drainandground(VSS). (HSpin),theparasiticinductancesinthesour ceoftopMOSFET andin thedrainofthebottomMOSFET(synchronousrec tifier) :(a)Thefirstpriorityin designinggroundingconnectionsis toconfinethehighpeakcurrentsthatchargean ddischargetheMOSFET gateintoa (b)Thesecondhighcurrentpathincludesthebo otstrapcapacitor,thebootstrapdiode, rechargedona a 2010 2013, OCTOBER2010 REVISEDAPRIL2013 REVISIONHISTORYC hangesfromRevisionD (April2013)toRevisionEPage 2010 2013,TexasInstrumentsIncorporatedSubmitD ocumentationFeedback11 ProductFolderLinks.

7 SM72295 PACKAGE OPTION 1 PACKAGING INFORMATIONO rderable DeviceStatus(1)Package TypePackageDrawingPinsPackageQtyEco Plan(2)Lead/Ball Finish(6)MSL Peak Temp(3)Op Temp ( C)Device Marking(4/5)SamplesSM72295MA/NOPBACTIVES OICDW2826 Green (RoHS& no Sb/Br)CU SN | Call TILevel-3-260C-168 HR-40 to 125S72295SM72295 MAE/NOPBLIFEBUYSOICDW28250 Green (RoHS& no Sb/Br)CU SNLevel-3-260C-168 HR-40 to 125S72295SM72295 MAX/NOPBACTIVESOICDW281000 Green (RoHS& no Sb/Br)CU SN | Call TILevel-3-260C-168 HR-40 to 125S72295 (1) The marketing status values are defined as follows:ACTIVE: Product device recommended for new : TI has announced that the device will be discontinued, and a lifetime-buy period is in : Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new : Device has been announced but is not in production.

8 Samples may or may not be : TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substancedo not exceed by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI mayreference these types of products as "Pb-Free".RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS : TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold.

9 Antimony trioxide basedflame retardants must also meet the <=1000ppm threshold requirement. (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuationof the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options.

10 Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finishvalue exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on informationprovided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken andcontinues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.