STB75NF75 STP75NF75 - STP75NF75FP

1 February 2007 Rev 81/1616 Order codesPart numberMarkingPackagePackagingSTB75NF75T4 B75NF75D PAKTape & reelSTP75NF75P75NF75TO-220 TubeSTP75NF75 FPP75NF75TO-220 FPTubeSTB75NF75 STP75NF75 - STP75NF75 FPN-channel 75V - - 80A - TO-220 - TO-220FP - D2PA KSTripFET II Power MOSFETG eneral features Exceptional dv/dt capability 100% avalanche testedDescriptionThis Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive Switching applicationInternal schematic diagram TypeVDSSRDS(on)IDSTB75NF7575V< 80A(1)STP75NF7575V< 80A(1)STP75NF75FP75V< 80A(1)1.

2 Current limited by package123TO-220TO-220 FPD - STP75NF75 - STP75NF75FP2/16 Contents1 Electrical ratings .. 32 Electrical characteristics .. characteristics (curves) .. 63 Test circuit .. 94 Package mechanical data .. 105 Packaging mechanical data .. 146 Revision history .. 15 STB75NF75 - STP75NF75 - STP75NF75 FPElectrical ratings3/161 Electrical ratingsTable maximum ratingsSymbolParameterValueUnitD2 PAK /TO-220TO-220 FPVDSD rain-source voltage (VGS = 0)75 VVDGRD rain-gate voltage (RGS = 20K )75 VVGSGate-source voltage 20 VID (1)1. Current limited by packageDrain current (continuous) at TC = 25 C8080 AID(1)Drain current (continuous) at TC=100 C7070 AIDM(2)2. Pulse width limited by safe operating areaDrain current (pulsed)320320 APTOTT otal dissipation at TC = 25 C30045 WDerating Cdv/dt (3)3. ISD 80A, di/dt 300A/ s, VDD V(BR)DSS, Tj TJMAXPeak diode recovery voltage slope12V/nsEAS (4)4.

3 Starting TJ = 25 oC, ID = 40A, VDD = pulse avalanche energy700mJVISOI nsulation withstand voltage (RMS) from all three leads to external heat sink (t=1s;TC=25 C)--2000 VTJTstgOperating junction temperatureStorage temperature-55 to 175 CTable dataSymbolParameterValueUnitD2 PAK /TO-220TO-220 FPRthJCThermal resistance junction-case C/WRthJAThermal resistance junction-ambient C/WTlMaximum lead temperature for soldering purpose(1)1. from case for 10sec)300 CElectrical characteristicsSTB75NF75 - STP75NF75 - STP75NF75FP4/16 2 Electrical characteristics (TCASE=25 C unless otherwise specified)Table statesSymbolParameterTest conditions (BR)DSSD rain-source breakdown voltageID = 250 A, VGS= 075 VIDSSZero gate voltage drain current (VGS = 0)VDS = Max rating,VDS = Max rating @125 C110 A AIGSSGate body leakage current(VDS = 0)VGS = 20V 100nAVGS(th)Gate threshold voltageVDS= VGS, ID = 250 A23 4 VRDS(on)Static drain-source on resistanceVGS= 10V, ID= Table conditions (1)1.

4 Pulsed: pulse duration=300 s, duty cycle transconductanceVDS = 15V, ID = 40A20 SCissCossCrssInput capacitanceOutput capacitanceReverse transfer capacitanceVDS =25V, f = 1 MHz, VGS = 03700730240pFpFpFQgQgsQgdTotal gate chargeGate-source chargeGate-drain chargeVDD = 60V, ID = 80A VGS =10V1172747160nCnCnCSTB75NF75 - STP75NF75 - STP75NF75 FPElectrical characteristics5/16 Table timesSymbolParameterTest (on)trtd(off)tfTurn-on delay timeRise timeTurn-off delay timeFall timeVDD= , ID= 45A, RG= , VGS=10 VFigure 15 on page 9251006630nsnsnsnsTable drain diodeSymbolParameterTest current80 AISDM(1)1. Pulse width limited by safe operating areaSource-drain current (pulsed)320 AVSD(2)2. Pulsed: pulse duration=300 s, duty cycle on voltage ISD = 80A, VGS = recovery timeReverse recovery chargeReverse recovery currentISD = 80A, di/dt = 100A/ s,VDD = 25V, TJ = 150 CFigure 17 on page 913266010nsnCAElectrical characteristicsSTB75NF75 - STP75NF75 - STP75NF75FP6/16 Electrical characteristics (curves) Figure operating area for TO-220 -D PAKF igure impedancefor TO-220 -D PAK Figure operating area for TO-220 FPFigure impedance for TO-220FP Figure characterisicsFigure characteristics STB75NF75 - STP75NF75 - STP75NF75 FPElectrical characteristics7/16 Figure drain-source on resistance Figure charge vs gate-source voltage Figure 10.

5 Capacitance variations Figure 11. Normalized gate threshold voltage vs temperatureFigure 12. Normalized on resistance vs temperature Electrical characteristicsSTB75NF75 - STP75NF75 - STP75NF75FP8/16 Figure 13. Source-drain diode forward characteristicsFigure 14. Normalized BVDSS vs temperature STB75NF75 - STP75NF75 - STP75NF75 FPTest circuit9/163 Test circuit Figure 15. Switching times test circuit for resistive loadFigure 16. Gate charge test circuit Figure 17. Test circuit for inductive load switching and diode recovery timesFigure 18. Unclamped inductive load test circuit Figure 19. Unclamped inductive waveform Package mechanical dataSTB75NF75 - STP75NF75 - STP75NF75FP10/16 4 Package mechanical dataIn order to meet environmental requirements, ST offers these devices in ECOPACK packages.

6 These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: - STP75NF75 - STP75NF75 FPPackage mechanical data11 MECHANICAL DATAP ackage mechanical dataSTB75NF75 - STP75NF75 - STP75NF75FP12/16 TO-247 MECHANICAL 4 D2 PAK MECHANICAL DATA3 STB75NF75 - STP75NF75 - STP75NF75 FPPackage mechanical data13 MECHANICAL DATAP ackaging mechanical dataSTB75NF75 - STP75NF75 - STP75NF75FP14/16 5 Packaging mechanical dataTAPE AND REEL SHIPMENTD2 PAK FOOTPRINT* on sales QTYBULK QTY10001000 REEL MECHANICAL MECHANICAL DATASTB75NF75 - STP75NF75 - STP75NF75 FPRevision history15/166 Revision history Table historyDateRevisionChanges03-Aug-20066 Complete version15-Sep-20067 RDS(on) value update27-Feb-20078 The document has been reformattedSTB75NF75 - STP75NF75 - STP75NF75FP16/16 Please Read Carefully.

7 Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve theright to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at anytime, without ST products are sold pursuant to ST s terms and conditions of are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes noliability whatsoever relating to the choice, selection or use of the ST products and services described license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of thisdocument refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party productsor services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of suchthird party products or services or any intellectual property contained OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIEDWARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIEDWARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWSOF ANY JURISDICTION)

8 , OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOTRECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAININGAPPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVEGRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER S OWN of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately voidany warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, anyliability of and the ST logo are trademarks or registered trademarks of ST in various in this document supersedes and replaces all information previously ST logo is a registered trademark of STMicroelectronics.

9 All other names are the property of their respective owners. 2007 STMicroelectronics - All rights reservedSTMicroelectronics group of companiesAustralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of