Transcription of UNISONIC TECHNOLOGIES CO., LTD
1 UNISONIC TECHNOLOGIES CO., LTD 2SC2235 NPN SILICON TRANSISTOR 1 of 4 Copyright 2016 UNISONIC TECHNOLOGIES Co., Ltd AUDIO POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS FEATURES * Complimentary to UTC 2SA965 TO-921TO-92NL1 ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing 2SC2235L-x-T92-B 2SC2235G-x-T92-B TO-92 E C B Tape Box 2SC2235L-x-T92-K 2SC2235G-x-T92-K TO-92 E C B Bulk 2SC2235L-x-T9N-B 2SC2235G-x-T9N-B TO-92NL
2 E C B Tape Box 2SC2235L-x-T9N-K 2SC2235G-x-T9N-K TO-92NL E C B Bulk Note: Pin Assignment: E: Emitter C: Collector B: Base MARKING TO-92 TO-92NL 2SC2235 NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2 of 4 ABSOLUTE MAXIMUM RATING ( TA=25 C, unless otherwise specified)
3 PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage VCEO 120 V Emitter-Base Voltage VEBO 5 V Collector Current IC 800 mA Emitter Current IE -800 mA Collector Power Dissipation PC 600 mW Junction Temperature TJ 150 C
4 Storage Temperature TSTG -55 ~ +150 C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA=25 C, unless otherwise specified) PARAMETER SYMBOLTEST CONDITIONS MIN TYP MAX UNITC ollector-Emitter Breakdown Voltage VBCEO IC =10mA, IB=0 120 V Emitter-Base Breakdown Voltage VBEBO IE=1mA, IC =0 5 V Collector Cut-off Current ICBO VCB=120V.
5 IE=0 100nAEmitter Cut-off Current IEBO VEB=5V, IC=0 100nADC Current Gain hFE VCE=5V, IC =100mA 80 240 Collector-Emitter Saturation Voltage VCE(SAT)IC =500mA, IB=50mA Base-Emitter Voltage VBE VCE=5V, IC =500mA Transition Frequency fT VCE=5V, IC =100mA 120 MHzCollector Output Capacitance Cob VCB=10V, IE=0.
6 F=1 MHz 30pF CLASSIFICATION OF hFE RANK Y O RANGE 120-240 80-160 2SC2235 NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 3 of 4 TYPICAL CHARACTERISTICS DC Current Gain vs.
7 Collector Current Collector Current, Ic (mA)DC Current Gain, hFE3103010010305010030030010005001000 Collector Current vs. Collector Emitter VoltageCollector Emitter Voltage, VCE(V)Collector Current, Ic (mA)0240200400866001000800101214 Common EmitterTA=25 C02IB=1mA34571015TA=100 CTA=-25 CTA=25 CCommon EmitterVCE=5 VCollector Emitter Saturation Voltage vs. Collector CurrentCollector Current, Ic (mA)Collector Emitter Saturation Voltage, VCE(SAT) CTA=25 CTA=-25 CCommon EmitterIc/IB=10 Collector Current vs. Base Emitter VoltageBase Emitter Voltage, VBE (V)Collector Current, Ic (mA) EmitterVCE=5 VSafe Operating AreaCollector Emitter Voltage, VCE(V)Collector Current, Ic (mA) 13101351030030 5050010005100 300 5001000305010030001ms *10ms *100ms *Ic Max.
8 (Pulse) *Ic Max. (Continous) DC Operation*Single Nonrepetitive Pulse TA=25 CCurve must be derated linearly with increase in temperatureCollector Power Dissipaton vs. Ambient TemperatureAmbient Temperature, TA( C)Collector Power Dissipaton, Pc (mW)020400200400806060010008001001201401 60TA=100 CTA=25 CTA=-25 C 2SC2235 NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 4 of 4 UTC assumes no responsibility for equipment failures that result from using products at values thatexceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, orother parameters) listed in products specifications of any and all UTC products described or containedherein.
9 UTC products are not designed for use in life support appliances, devices or systems wheremalfunction of these products can be reasonably expected to result in personal injury. Reproduction inwhole or in part is prohibited without the prior written consent of the copyright owner. The informationpresented in this document does not form part of any quotation or contract, is believed to be accurateand reliable and may be changed without notice.
