Transcription of UNISONIC TECHNOLOGIES CO., LTD
1 UNISONIC TECHNOLOGIES CO., LTD 2sc1384 NPN SILICON TRANSISTOR 1 of 5 Copyright 2016 UNISONIC TECHNOLOGIES Co., Ltd NPN SILICON TRANSISTOR DESCRIPTION The UTC 2sc1384 is power amplifier and driver. FEATURES * Low VCE(SAT) * 2~3W output in complementary pair with 2SA684 ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen-Free Package 1 2 3 Packing - 2SC1384G-x-AB3-R SOT-89 B C E Tape Reel2SC1384L-x-T92-B 2SC1384G-x-T92-B TO-92 E C B Tape Box 2SC1384L-x-T92-K 2SC1384G-x-T92-K TO-92 E C B Bulk 2SC1384L-x-T9N-B 2SC1384G-x-T9N-B TO-92NL E C B Tape Box 2SC1384L-x-T9N-K 2SC1384G-x-T9N-K TO-92NL E C
2 B Bulk Note: Pin Assignment: B: Base C: Collector E: Emitter MARKING SOT-89 TO-92 TO-92NL UTCC13841 Data CodeL: Lead FreeG: Halogen FreeUTC2SC1384 Data CodeL: Lead FreeG: Halogen Free 2sc1384 NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2 of 5 ABSOLUTE MAXIMUM RATINGS (TA=25 C, unless otherwise specified) PARAMETER SYMBOLRATINGS UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Peak Collector Current ICP A Collector Current (DC)
3 IC 1 A SOT-89 500 mW Collector Dissipation (TA=25 C) TO-92/TO-92 NLPC 1000 mW Junction Temperature TJ 125 C Operating Temperature TOPR -20 ~ +85 C Storage Temperature TSTG -40 ~ +150 C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
4 ELECTRICAL CHARACTERISTICS (TA=25 C, unless otherwise specified) PARAMETER SYMBOLTEST CONDITIONS MIN TYP MAX UNITC ollector-Base Breakdown Voltage BVCBO IC=10 A, IE=0 60 V Collector-Emitter Breakdown Voltage BVCEO IC=2mA, IB=0 50 V Emitter-Base Breakdown Voltage BVEBO IE=10 A, IC=0 5 V Collector Cut-Off Current ICBO VCB=20V, IE=0 AhFE1 VCE=10V, IC=500mA 85 160 340 DC Current Gain hFE2 VCE=5V, IC=1A 50 100 Collector-Emitter Saturation Voltage VCE(SAT)
5 IC= , IB=50mA Base-Emitter Saturation Voltage VBE(SAT) IC= , IB=50mA Current Gain Bandwidth Product fT VCE=10V, IB=50mA 200 MHzOutput Capacitance COB VCB=10V, IE=0, f=1 MHz 11 20 pF CLASSIFICATION OF hFE RANK Q R S RANGE 85-170 120-240 170-340 2sc1384 NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO.
6 , LTD 3 of 5 TYPICAL CHARACTERISTICS Collector Power Dissipation, PC(W)Collector Current, IC(A) Collector Current, IC(A)Collector To Emitter Saturation Voltage, VCE(SAT) (V) 2sc1384 NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 4 of 5 TYPICAL CHARACTERISTICS(Cont.) -1-3-10-30-100 Emitter Current, IE(mA)02060100140160200 Transition Frequency, fT(MHz)VCB=10 VTA=25 C4080120180131030100 Collector To Base Voltage, VCB(V)051525354050 Collector Output Capacitance, Cob(pF)IE=0F=1 MHzTA=25 C10203045 Transition Frequency vs. Emitter CurrentCollector Output Capacitance vs.
7 Collector to Base Voltage 100 Base To Emitter Resistance, RBE(K ) CVCE=10V0 20 40 60 80 100 120 140 160 Ambient Temperature, TA ( C)110102103104 Collector to Emitter Voltage vs. Base to Emitter ResistanceCollector to Emitter Current Temperature Collector Current, IC (A) 2sc1384 NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 5 of 5 UTC assumes no responsibility for equipment failures that result from using products at values thatexceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, orother parameters) listed in products specifications of any and all UTC products described or containedherein.
8 UTC products are not designed for use in life support appliances, devices or systems wheremalfunction of these products can be reasonably expected to result in personal injury. Reproduction inwhole or in part is prohibited without the prior written consent of the copyright owner. The informationpresented in this document does not form part of any quotation or contract, is believed to be accurateand reliable and may be changed without notice.
