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IGBT (Insulated Gate Bipolar Transistor) 1 Differences ...
Semiconductor Group1 IGBT ( insulated gate Bipolar transistor ) 1 differences between mosfet and StructureThe IGBT combines in it all the advantages of the Bipolar and MOS field effect transistor . Ascan be seen from the structures shown below, the only difference lies in the additionalp-zone of the IGBT. Due to the presence of this layer, holes are injected into the highlyresistive n-layer and a carrier overflow is created. This increase in conductivity of the n-layerallows to reduce the on-state voltage of the IGBT. Figure 1 SIPMOS- transistor (MOSFET) SourceGate(n-Poly-Silicon)Drainn-pn+Al+n +SiO2 IGBT FundamentalsSemiconductor Group2 Figure 2 IGBT ( insulated gate Bipolar transistor ) Comparison of the Output Characteristics0102030012345 VDS[V]ID [A]20V10V9V8 VVGE mitterGate(n-Poly-Silicon)Collectorn-ppn +Al+SiO2 Figure 3 Output Characteristics of an IGBTBUP 314 (1000 V) Figure 4 Output Characteristics of a MOSFETBUZ 312 (1000 V) IGBT FundamentalsSemiconductor Group 3 The RDSon of the MOSFET in on-state
Semiconductor Group 1 IGBT (Insulated Gate Bipolar Transistor) 1 Differences Between MOSFET and IGBT 1.1 Structure The IGBT combines in it all the advantages of the bipolar and MOS field effect transistor.
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