Transcription of PD - 91339A IRF520N - redrok.com
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PD - 91339A IRF520N - redrok.com
IRF520 NHEXFET Power MOSFETPD - 91339 AFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefit, combined with the fast switching speed andruggedized device design that HEXFET PowerMOSFETs are well known for, provides the designerwith an extremely efficient and reliable device for usein a wide variety of TO-220 package is universally preferred for allcommercial-industrial applications at power dissipationlevels to approximately 50 watts. The low thermalresistance and low package cost of the TO-220contribute to its wide acceptance throughout @ TC = 25 CContinuous Drain Current, VGS @ @ TC = 100 CContinuous Drain Current, VGS @ Drain Current 38PD @TC = 25 CPower Dissipation48 WLinear Derating CVGSGate-to-Source Voltage 20 VEASS ingle Pulse Avalanche Energy 91mJIARA valanche Current Avalanche Energy Diode Recovery dv/dt Junction and-55 to + 175 TSTGS torage Temperature RangeSoldering Temperature, for 10 seconds300 ( from case ) CMounting torque, 6-32 or M3 srew10 lbf in ( m)Absolute Maximum JCJunction-to-Case CSCase-to-Sink, Flat, Greased C/WR JAJunction-to-Ambient 62 Thermal ResistanceVDSS = 100 VRDS(on) = ID = Process TechnologylDynamic dv/dt Ratingl175 C
IRF520N Fig 7. Typical Source-Drain Diode Forward Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 8. Maximum Safe Operating Area
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